Deposition of thick cubic boron nitride films — Mechanisms and concepts

Kulisch, W.; Freudenstein, R.

doi:10.1016/j.tsf.2007.06.073

Cited by 24 publications

(7 citation statements)

References 69 publications

(127 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The bombardment gives rise to high degree of compressive stress in the films that in the worst case causes spallation of the films and is likely to degrade the electronic properties of the films. Further, the deposition of c-BN films often follows a growth mode, where a thin, few nm, amorphous film is nucleated closest to the substrate, which is followed by a few nm of t-BN before any c-BN can nucleate [7]. Such layered growth must be avoided to obtain films of high quality c-BN.…”

Section: Introductionmentioning

confidence: 99%

On the effect of water and oxygen in chemical vapor deposition of boron nitride

et al. 2012

View full text Add to dashboard Cite

close to stoichiometric, although containing a few atomic percent oxygen and hydrogen, Xray diffraction measurements show no indications for nucleation of any crystalline BN phases, despite change in N/B-ratio and/or process temperature. Thermodynamic modeling suggests that this is due to formation of strong B-O bonds already in the gas phase in the presence of water or oxygen during growth. This growth behavior is believed to be caused by an uncontrolled release of water and/or oxygen in the deposition chamber and highlights the sensitivity of the BN CVD process towards oxygen and water.

show abstract

Section: Introductionmentioning

confidence: 99%

On the effect of water and oxygen in chemical vapor deposition of boron nitride

et al. 2012

View full text Add to dashboard Cite

show abstract

“…The deposition rate of the BN film without applying a bias voltage was $10 nm/min. It decreased gradually to $6:5 nm/min as the negative bias voltage was increased to more than À100 V. This decrease was probably caused by resputtering of the growing film, 11,12) which means that the dc bias was effectively applied to the substrate. The deposition rate appeared to be independent of the substrate temperature.…”

Section: Resultsmentioning

confidence: 98%

“…increased to more than À100 V. This decrease was probably caused by resputtering of the growing film, 11,12) which means that the dc bias was effectively applied to the substrate. The deposition rate appeared to be independent of the substrate temperature.…”

Section: Resultsmentioning

confidence: 99%

“…Some papers reported a preferential orientation of the h-BN layer. 7,11,14) In order to investigate the preferential orientation of the sp 2 -BN layer, we obtained NEXAFS spectra for the 33-nm-thick film with the analyses of light incidence at 45 and 90 from the surface. The results obtained are shown in Fig.…”

Section: Growth Process Of Films Containing Sp 3 -Bn Phasementioning

confidence: 99%

See 1 more Smart Citation

X-ray Absorption Studies on the Growth Process of Radio-Frequency-Magnetron-Sputtered Boron Nitride Films: Effects of Bias Voltage and Substrate Temperature

Hori

Niibe

Kotaka

et al. 2013

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

We have investigated the effects of bias voltage and substrate temperature on the growth process of RF-magnetron-sputtered BN films. When the negative bias voltage was higher than 80 V, films including the sp 3 -BN phase grew even if the substrate temperature was RT. When the substrate temperature and the negative bias voltage were 600 C and >100 V, respectively, films containing more than 90% sp 3 -BN phase were grown. The growth process of films deposited at 150 and 600 C under a constant bias voltage of À100 V was studied by Near edge X-ray absorption fine structure (NEXAFS) measurements. These films consisted of two layers: an sp 2 -BN phase underlayer and an sp 3 -BN phase top layer. The sp 2 -BN underlayer had a preferential orientation of the c-axis parallel to the film surface. The thickness of the sp 2 -BN underlayer decreased with increasing substrate temperature. High substrate temperatures assisted the nucleation and growth of the sp 3 -BN phase.

show abstract

“…The cubic boron nitride (c-BN) films have many desirable properties and have been used in many industry fields. [1][2][3][4][5] One of the promising application fields, which has long been expected, is to use the c-BN film as a protective coating for cutting tools, because it possesses outstanding mechanical properties such as high hardness, wear resistance, and chemical inertness to ferrous metals at high temperatures. [2][3][4][5][6] The films are always required to be thick enough in order to play a protective role.…”

Section: Introductionmentioning

confidence: 99%