Semi-Insulating Polycrystalline-Silicon (SIPOS) Passivation Technology

Matsushita, Tomonori; Aoki, T.; Otsu, T.; Yamoto, Hisayoshi; Hayashi, Hisao; Okayama, M.; Kawana, Y.

doi:10.7567/jjaps.15s1.35

Cited by 85 publications

(22 citation statements)

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“…Hitchman and Kane [1] modeled the kinetics of SIPOS growth in an LPCVD reactor for 0 < 7 < 0.6 by extending a model of polysilicon growth previously developed by Hitchman and coworkers [8]. In particular, they explained the drop in growth rate with increasing -Y by assuming that adsorbed N20 blocked surface sites for SiH 4 pyrolysis.…”

Section: Sipos Growth (Y < 2)mentioning

confidence: 97%

“…The composition of materials shown in this figure covers the entire range of silicon-rich oxides (SRO), ranging from SIPOS at low values of -Y to off-stoichiometric oxide (OSO) for -y > 20. For y < 2, the growth rate variation can be explained using the kinetic model developed by Hitchman and Kane for SIPOS growth [1]. However at higher values of -, this model does not provide a good fit to the data.…”

Section: Growth and Measurement Techniquementioning

confidence: 97%

“…At low -y these films approach polysilicon and are described as SIPOS, Semi-Insulating PolySilicon. SIPOS is commonly used as a surface passivant for high-voltage devices [1]. For high 7 one approaches SiO2, producing OffStoichiometry Oxides (OSO) which can be used as insulating layers in EAROM technology [2].…”

Section: Introductionmentioning

confidence: 99%

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Chemical Kinetics of Silicon-Rich Oxide Growth in an LPCVD Reactor

Lam

Rose

1988

MRS Proc.

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The chemical kinetics of Silicon Rich Oxide (SRO) growth in a N 2 0-SiH 4 LPCVD reactor has been studied at deposition temperatures from 610 to 680 0 C and pressures from 0.4 to 0.5 torr. We can produce SRO films with a wide spectrum of input reactant ratios -y = [N 2 01/[SiH 4 ] = 1 to 40. The dependence of film composition on Y changes dramatically in a region around 7 = 2.Growth for -< 2 is consistent with the chemical kinetics of SIPOS growth. Growth for y> 20 can be explained by oxidation of silicon in the bulk of the growing SRO film. We can explain growth from 7 ; 4 to 20 by considering the chemical kinetics of possible binary surface reactions which may produce Si-Si or Si-O bonds. This allows us to accurately model the dependence of SRO growth rate in this region as a function of 7, pressure, and deposition temperature.

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Section: Sipos Growth (Y < 2)mentioning

confidence: 97%

Section: Growth and Measurement Techniquementioning

confidence: 97%

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Chemical Kinetics of Silicon-Rich Oxide Growth in an LPCVD Reactor

Lam

Rose

1988

MRS Proc.

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“…SIPOS is a high-resistivity semiconductor, normally used in silicon technology, particularly for the passivation of edge structures in power devices [18,19]. The material is a solid mixture of silicon and silicon oxide phases usually indicated as semi-insulating polycrystalline silicon (SIPOS).…”

Section: -Erbium Doping Of Siposmentioning

confidence: 99%

Erbium doping of crystalline and amorphous silicon for optoelectronic applications

Coffa

Lombardo

Priolo³

et al. 1996

Nuov Cim D

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In this work we demonstrate that efficient light emission at 1.54 ~tm can be achieved when Er ions are incorporated into crystalline Si or in heavily oxygen-doped amorphous and polycrystalline Si films (SIPOS). We have found that temperature quenching of photo-and electroluminescence, which is the major limitation towards the achievement of room temperature luminescence, can be strongly reduced by codoping these films with oxygen. This impurity is already present in as-prepared SIPOS and it is introduced by ion-implantation in crystalline Si. Er luminescence is obtained under both optical and electrical excitation and we demonstrate that excitation occurs through a carrier-mediated process. Electrical excitation is obtained by incorporating Er in properly designed device structures. It is found that this excitation can occur both through the recombination of hole-electron pairs and through impact excitation of the Er ions by hot electrons. These two mechanisms have different efficiencies and impact excitation is shown to prevail at room temperature. These data are presented and possible future developments are discussed.PACS 85.60 -Optoelectronic devices. PACS 01.30.Cc -Conference proceedings.

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“…MCT [3]), where state of the art mechanical bevelling and passivation with poly imide or silicone rubber are no longer compatible. For this reason we have developed a planar junction termination system which is comprised of a deep diffused termination zone [4,5] and a SIPOS [6] -nitridepassivation layer as shown schematically in Fig. I .…”

Section: Introductionmentioning

confidence: 99%

SIPOS-passivation for high voltage power devices with planar junction termination

Stockmeier

Lilja

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs

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Power diodes have been fabricated with a planar junction termination suitable for breakdown voltages up to 6.2 kV. The devices were passivated with a double layer of SIPOS and silicon nitride, directly deposited on the silicon surface. By numerical simulation and experiment we have investigated the influence of the SIPOS-layer on the current distribution in the device while in the blocking state. We have found that SIPOS acts simply as a resistive layer and that the portion of the reverse current which flows through the passivation layer is given by the balance of the resistances of the space charge region and the SIPOS-layer. Therefore, if the resistance of the SIPOS layer is adjusted carefully (by its oxygen content and its lateral and vertical dimensions), high voltage diodes can be passivated with a semi-insulating material and an excellent blocking behaviour can be achieved.

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Semi-Insulating Polycrystalline-Silicon (SIPOS) Passivation Technology

Cited by 85 publications

References 0 publications

Chemical Kinetics of Silicon-Rich Oxide Growth in an LPCVD Reactor

Chemical Kinetics of Silicon-Rich Oxide Growth in an LPCVD Reactor

Erbium doping of crystalline and amorphous silicon for optoelectronic applications

SIPOS-passivation for high voltage power devices with planar junction termination

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