SEM-contour-based OPC model calibration through the process window

Vasek, Jim; Menedeva, Ovadya; Levitzky, Dan; Lindman, Ofer; Nemadi, Youval; Bailey, George E.; Sturtevant, John L.

doi:10.1117/12.712232

Cited by 19 publications

(15 citation statements)

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“…Additionally, contour-based metrology can inform the model regarding pattern failure modes such as pinching and bridging. [23][24][25][26][27] It is critical to sample the full allowed range of design topologies in order to adequately calibrate a model. Several workers have reported on the benefit of ensuring a full range of aerial image parameters in the test suite.…”

Section: Metrology and Model Calibrationmentioning

confidence: 99%

Challenges for patterning process models applied to large scale

Sturtevant

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Full-chip patterning simulation has been utilized in semiconductor manufacturing for more than ten years, and has been a key enabler for multiple technology generations, from 130 nm to the emerging 14 nm node. This span has featured two wavelength changes, a progression of optical NA increases (and a subsequent decrease), and a variety of patterning processes and chemistries. Full-chip patterning simulations utilize quasirigorous optical models and semiempirical resist and etch process models. There has been steady improvement in the predictive power and computational efficiency of the patterning models used in full chip simulation tools, and this paper will review this progress as well as the factors that ultimately limit the predictive capability of such models. In addition, this paper will outline the new process simulation challenges that are emerging as the industry approaches sub-0.25 k1 patterning. These challenges lie principally in improving accuracy and predictive capability, including 3D effects, for an expanding set of processes and failure modes, while maintaining or improving full chip data preparation cycle times.

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Section: Metrology and Model Calibrationmentioning

confidence: 99%

Challenges for patterning process models applied to large scale

Sturtevant

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

Self Cite

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“…First, the SEM contour was extracted; second, the simulation contour was obtained by simulating the postopc layout; the final step is to align the simulated contour to the SEM and compare the difference between the simulated contour and extracted contour. The detailed 2D calibration and verification can be referred to [5], [6] and [7].…”

Section: D Verificationmentioning

confidence: 99%

Advanced OPC and 2D verification for tip engineering using aggressive illuminations

Zhang¹,

Lukanc²,

Yang³

et al. 2008

Optical Microlithography XXI

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“…This means that beside single Line / Space and Contact hole measurements additional measurements from more Recipe GDSII complex two dimensional structures have to be considered. Because these structures cannot be described completely by one CD value or an ellipse the new methodology of Edge Contour Extraction (ECE) has be introduced [1]. This method extracts the complete shape of the printed structures on the wafer.…”

Section: Introductionmentioning

confidence: 99%

CD-SEM contour-based process monitoring in DRAM production environment

Krämer¹,

Jackisch²,

Wildfeuer³

et al. 2008

SPIE Proceedings

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As design rules shrink, there is an increase in the complexity. OPC/RET have been facilitating unprecedented yield at k 1 factors, they increase the mask complexity and production cost, and can introduce yield-detracting errors. Currently OPC modeling techniques are based on extensive CD-SEM measurements which are limited to one dimensional structures or specific shape structures e.g. contact holes. As a result the measured information is not representing the whole spatial 2D change in the process. Therefore the most common errors are found in the OPC design itself and in the resulting patterning robustness across the process window. A new methodology for OPC model creation and verification is to extract contours from complex test structures which beside the CD values contain further information about e.g. various proximities.In this work we use 2D contour profiles extracted automatically by the CD-SEM over varying focus and exposure conditions. We will show that the measurement sensitivity and uncertainty of that algorithm through the whole process window fulfills the requirements of the ITRS with respect to CD-SEM metrology tools. This will be done on various test structures normally being used for OPC model generation and OPC stability monitoring. Furthermore a study on systematic influences on the quality of the extracted contours has been started. This study includes the evaluation of various parameters which are considered as possible contributors to the uncertainty of the edge contour extraction. As one of the parameters we identified the pixel size of the SEM images. Furthermore, a new metric for calculating repeatability and reproducibility determination for 2D contour extraction algorithms will be presented. By applying this contour extraction based methodology to different CD-SEM tool generations the influence of SEM beam resolution to the quality of the contours will be evaluated.

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SEM-contour-based OPC model calibration through the process window

Cited by 19 publications

References 0 publications

Challenges for patterning process models applied to large scale

Challenges for patterning process models applied to large scale

Advanced OPC and 2D verification for tip engineering using aggressive illuminations

CD-SEM contour-based process monitoring in DRAM production environment

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