2016
DOI: 10.1016/j.micron.2015.05.013
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SEM and Raman analysis of graphene on SiC(0001)

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Cited by 31 publications
(19 citation statements)
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“…FIB allowed to obtain chemically unchanged, perfectly polished surfaces for subsequent analysis. The application of EsB detector at low acceleration voltage clearly showed even the slightest differences in the composition [25]. …”
Section: Focused Ion Beam-scanning Electron Microscopymentioning
confidence: 98%
“…FIB allowed to obtain chemically unchanged, perfectly polished surfaces for subsequent analysis. The application of EsB detector at low acceleration voltage clearly showed even the slightest differences in the composition [25]. …”
Section: Focused Ion Beam-scanning Electron Microscopymentioning
confidence: 98%
“…SEM is also used for characterizations of the growth of graphene on SiC [63]. Because of its atomic thickness, graphene is usually detected with secondary electrons which probe only a sample surface.…”
Section: Scanning Electron Microscopymentioning
confidence: 99%
“…These modes are used to study crystal structures, X-rays are used for determining chemical composition, and visible light with a monochromator can be used for cathodoluminescence (CL). SEM is also used for characterizations of the growth of graphene on SiC [63]. Because of its atomic thickness, graphene is usually detected with secondary electrons which probe only a sample surface.…”
Section: Scanning Electron Microscopymentioning
confidence: 99%
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“…All the SEM images were obtained with a primary electron beam of 2 keV, because the formation of buffer layer and graphene on SiC substrates are easily distinguished by low-voltage SEM contrasts [11,23,24]. Ex situ micro probe Raman spectroscopy was also carried out for graphene and buffer layer evaluation before and after the selective oxygen etching.…”
Section: Methodsmentioning
confidence: 99%