&lt;i&gt;In Situ &lt;/i&gt;Study on Oxygen Etching of Surface Buffer Layer on SiC(0001) Terraces

Wang, Chenxing; Nakahara, Hiroyuki; Saito, Yahachi

doi:10.1380/ejssnt.2017.13

Cited by 4 publications

(3 citation statements)

References 29 publications

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“…2, c−e представлена дугооб-разно расположенными короткими рефлексами−тяжами, отвечающими отражениям от буферного слоя, находя-щегося под графеном. Подобная картина электронной дифракции наблюдалась в работе [6] от образцов, по-крытых однослойным графеном.…”

Section: результаты и обсуждениеunclassified

Электронно-дифракционное изучение структуры эпитаксиального графена, выращенного методом термодеструкции 6H- и 4H-SiC (0001) в вакууме

Kotousova¹,

Lebedev²,

Лебедев³

et al. 2018

Физика Твердого Тела

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The method of reflection high-energy electron diffraction (RHEED) is used for studying the structure of graphene layers formed on the surface of the Si-face of conductive and semi-insulating 6 H - and 4 H -SiC(0001) substrates by thermal desorption of Si atoms in high vacuum, depending on the temperature and time of sublimating Si atoms as well as depending on the method of preprocessing the substrate surface. Diffraction patterns are recorded in the $$[\bar 12\bar 10]$$ [ 1 ¯ 2 1 ¯ 0 ] and $$[1\bar 100]$$ [ 1 1 ¯ 00 ] crystallographic directions of the substrates. It is found that in all experiments the formation of graphene layers occurs with a rotation of the graphene crystal lattice by 30° relative to the SiC lattice.

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Section: результаты и обсуждениеunclassified

Электронно-дифракционное изучение структуры эпитаксиального графена, выращенного методом термодеструкции 6H- и 4H-SiC (0001) в вакууме

Kotousova¹,

Lebedev²,

Лебедев³

et al. 2018

Физика Твердого Тела

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“…[26][27][28][29] When EG buffer layers are used for metal intercalation, the metal can remain stabilized as metallic [28,29] or transform into a disordered oxide [27,30] based on the structural properties (level of disorder) of the starting EG buffer layer. [31][32][33][34][35] Hence, controlled synthesis of ordered and disordered EG buffers, and its impact on the intercalated 2D layers should be understood such that the interface can be engineered for next-generation applications.…”

Section: Introductionmentioning

confidence: 99%

2D Oxides Realized via Confinement Heteroepitaxy

Türker

Dong

Wetherington

et al. 2022

Adv Funct Materials

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Novel confinement techniques facilitate the formation of non-layered 2D materials. Here it is demonstrated that the formation and properties of 2D oxides (GaO x , InO x , SnO x ) at the epitaxial graphene (EG)/silicon carbide (SiC) interface is dependent on the EG buffer layer properties prior to element intercalation. Using 2D Ga, it is demonstrated that defects in the EG buffer layer lead to Ga transforming to GaO x with non-periodic oxygen in a crystalline Ga matrix via air oxidation at room temperature. However, crystalline monolayer GaO 2 and bilayer Ga 2 O 3 with ferroelectric wurtzite structure(FE-WZ') can then be formed via subsequent high-temperature O 2 annealing. Furthermore, the graphene/X/SiC (X = 2D Ga or Ga 2 O 3 ) junction is tunable from Ohmic to a Schottky or tunnel barrier depending on the interface species. Finally, using vertical transport measurements and electron energy loss spectroscopy analysis, the bandgap of 2D gallium oxide is identified as 6.6 ± 0.6 eV, significantly larger than that of bulk β-Ga 2 O 3 (≈4.8 eV), suggesting strong quantum confinement effects at the 2D limit. The study presented here is foundational for development of atomic-scale, vertical 2D/3D heterostructure for applications requiring short transit times, such as GHz and THz devices.

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“…1a). Different types of have been reported, with two main broad peaks [28][29][30] or with three main peaks [6,[31][32][33][34]. Although the discrepancies of these reported spectra are significant, there is still no systematic and statistical analysis aiming to understand this disagreement.…”

Section: Introductionmentioning

confidence: 99%

Buffer layers inhomogeneity and coupling with epitaxial graphene unravelled by Raman scattering and graphene peeling

Wang

Huntzinger

Bayle

et al. 2020

Carbon

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The so-called buffer layer (BL) is a carbon rich reconstructed layer formed during SiC (0001) sublimation. The covalent bonds between some carbon atoms in this layer and underlying silicon atoms makes it different from epitaxial graphene. We report a systematical and statistical investigation of the BL signature and its coupling with epitaxial graphene by Raman spectroscopy. Three different BLs are studied: bare buffer layer obtained by direct growth (BL0), interfacial buffer layer between graphene and SiC (c-BL1) and the interfacial buffer layer without graphene above (u-BL1). To obtain the latter, we develop a mechanical exfoliation of graphene by removing an epoxy-based resin or nickel layer. The BLs are ordered-like on the whole BL growth temperature range. BL0 Raman signature may vary from sample to sample but forms patches on the same terrace. u-BL1 share similar properties with BL0, albeit with more variability. These BLs have a strikingly larger overall intensity than BL with graphene on top. The signal high frequency side onset upshifts upon graphene coverage, unexplainable by a simple strain effect. Two fine peaks (1235, 1360 cm-1), present for epitaxial monolayer and absent for BL and transferred graphene. These findings point to a coupling between graphene and BL.

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<i>In Situ </i>Study on Oxygen Etching of Surface Buffer Layer on SiC(0001) Terraces

Cited by 4 publications

References 29 publications

Электронно-дифракционное изучение структуры эпитаксиального графена, выращенного методом термодеструкции 6H- и 4H-SiC (0001) в вакууме

Электронно-дифракционное изучение структуры эпитаксиального графена, выращенного методом термодеструкции 6H- и 4H-SiC (0001) в вакууме

2D Oxides Realized via Confinement Heteroepitaxy

Buffer layers inhomogeneity and coupling with epitaxial graphene unravelled by Raman scattering and graphene peeling

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