Self-suppression effect of longitudinal spatial hole burning in absorptive-grating gain-coupled DFB lasers

Sudoh, T.K.; Nakano, Yoshiaki; Tada, Kunio; Kikuchi, K.; Hirata, T.; Hosomatsu, H.

doi:10.1109/68.250043

Cited by 14 publications

(5 citation statements)

References 13 publications

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“…They show single mode behavior without any phase shift in the grating and without the need for sophisticated antireflection coatings. [17][18][19] Also a reduced frequency chirp is expected 20 as well as a higher side mode suppression and a reduced spatial hole burning effect 21,22 in comparison to an index coupled structure. Very important for optical communication systems is the back reflection sensitivity.…”

Section: Gain Coupled Dfb Lasersmentioning

confidence: 96%

Focused ion beam implantation for opto- and microelectronic devices

König¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Focused ion beam implantation is a powerful technology for the fabrication of opto- and microelectronic devices. Optoelectronic devices like gain coupled distributed feedback lasers and nonabsorbing waveguides can be defined in semiconductor heterostructures by the band gap shift due to highly spatially resolved implantation induced thermal intermixing. Single mode emitting devices were fabricated with emission wavelengths of 1 and 1.55 μm in the material systems GaInAs/(Al)GaAs and GaInAsP/InP, respectively. Band gap shifts of more than 65 meV could be reached in GaInAsP quantum film structures which simplifies the integration of nonabsorbing waveguide sections with, e.g., lasers, modulators, and detectors. In highly doped semiconductor layers semi-insulating areas could be defined by focused ion implantation. Depletion lengths down to 50 nm can be controlled and were demonstrated on current injection restricted resonant tunneling devices. By using this technique collector-up heterobipolar transistors were fabricated which exhibit current amplification factors up to 45.

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Section: Gain Coupled Dfb Lasersmentioning

confidence: 96%

Focused ion beam implantation for opto- and microelectronic devices

König¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…In equations (7) and (8),  represents the coupling coefficient. The solution of these coupled mode equations (7) and (8) has the form            (9)            (10) where   ,   ,   ,   are constants and  is the complex propagating constant to be determined. Inserting (9) and (10) in (7) and (8), one obtains…”

Section: Derivation Of the Equationmentioning

confidence: 99%

“…To solve this problem, a DFB laser with anti-reflective coating and phase-shifted by a quarter of a wavelength has been proposed to prevent reflection [6]. But the residual reflectance must be made smaller than 0.005, and the problem is that spatial hole burning is so severe that the non-linearity of gain is caused [7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Simulation for DFB Lasers with Grating Phase of pi on One Mirror Face

2020

APJCRI

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In this paper, a simulation tool has been developed and the threshold gain and lasing frequency of a lasing mode in longitudinal direction of a 1.55um DFB(Distributed Feedback) laser with two mirrors and without anti-reflection coatings, that have both gain and index gratings, have been analyzed. The main purpose of this paper is to find an optimum value of grating phase of a mirror face and coupling strength in order to obtain excellent stable frequency operation of a single-mode during high-speed modulation. The grating phase of a left mirror face is fixed to be π and the grating phase of a right mirror face is varied. In order to obtain the largest gap in the oscillation threshold-gain between the first and second modes, DFB lasers should have coupling strength  =10 in case of Bragg deviation   . In case of   , the oscillation frequency selectivity of the single-mode is excellent in the range from  =2 to  =6, except of   phase= . If the goal is to minimize the oscillation gain, DFB lasers should have  =10, in order to enhance the backward scattering of the propagating light.

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“…We previously reported that the LSHB could be reduced in gain-coupled (GC) DFB lasers with absorptive gratings [3]. In addition, there is a possibility that the nonlinear absorption compression of the grating compensates the nonlinear gain compression of the active material, thus resulting in smaller nonlinearity.…”

Section: Introductionmentioning

confidence: 99%

“…Distributed feedback (DFB) laser diodes are used for those applications due to their single and stable longitudinal mode operation capability, and resulting low noise characteristics. However, some nonlinear effects specific to DFB lasers, such as the longitudinal spatial hole burning (LSHB), deteriorate their linearity and modulation distortion characteristics 123.We previously reported that the LSHB could be reduced in gain-coupled (GC) DFB lasers with absorptive gratings [3]. In addition, there is a possibility that the nonlinear absorption compression of the grating compensates the nonlinear gain compression of the active material, thus resulting in smaller nonlinearity.…”

mentioning

confidence: 98%

Reduction of second- and third-order harmonic distortion by nonlinear absorption in gain-coupled DFB lasers

Futakuchi¹,

Taguchi²,

Nakano³

Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference (Cat. No. 98CH361130)

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The analog modulation distortion due to nonlinear gain compression has been found to be reduced significantly in the gain-coupled DFB laser of absorptive grating type. It is because the gain compression is compensated by the loss compression in the grating. I. IntroductionLaser diodes (LDs) with low modulation distortion are very important for subcarrier multiplexed (SCM) systems such as optical CATV and microcellular networks [ 11. Distributed feedback (DFB) laser diodes are used for those applications due to their single and stable longitudinal mode operation capability, and resulting low noise characteristics. However, some nonlinear effects specific to DFB lasers, such as the longitudinal spatial hole burning (LSHB), deteriorate their linearity and modulation distortion characteristics 123.We previously reported that the LSHB could be reduced in gain-coupled (GC) DFB lasers with absorptive gratings [3]. In addition, there is a possibility that the nonlinear absorption compression of the grating compensates the nonlinear gain compression of the active material, thus resulting in smaller nonlinearity. Therefore, modulation distortion in GC DFB LDs is expected to be lower than that of conventional index-coupled (IC) DFB LDs.In order to investigate whether this effect really exists or not, we here analyzed second and third harmonic distortions (2HD and 3HD) in GC DFB LDs of absorptive grating type numerically, taking the dynamic nature of the abosorptive grating into consideration.

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Self-suppression effect of longitudinal spatial hole burning in absorptive-grating gain-coupled DFB lasers

Cited by 14 publications

References 13 publications

Focused ion beam implantation for opto- and microelectronic devices

Focused ion beam implantation for opto- and microelectronic devices

Simulation for DFB Lasers with Grating Phase of pi on One Mirror Face

Reduction of second- and third-order harmonic distortion by nonlinear absorption in gain-coupled DFB lasers

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