Self-selecting vapour growth of bulk crystals – Principles and applicability

Szczerbakow, A.; Durose, K.

doi:10.1016/j.pcrysgrow.2005.10.004

Cited by 58 publications

(59 citation statements)

References 37 publications

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“…3b). This situation is opposite to that described by Szczerbakow et al [47] in the self-selective vapour growth of bulk crystals. The inversion of the sign of the growth rate observed in experiment No.…”

Section: Discussioncontrasting

confidence: 90%

“…Reduction of the rate of crystal growth as growth proceeds is a known phenomenon. For example, in conventional vapour growth methods like the Piper-Polich [49] and the Markov-Davydov [50] this self-limiting behaviour is attributed to the fact that the growth front is located at the hottest part of the crystal and is therefore bottle-necked by the heat transfer through the volume of the material being grown (which is determined by its thermal conduction properties) [47]. When RT > ΔG ≠ and under longitudinally isothermal conditions, a dynamic equilibrium tend to be established, where the rate of crystallization equals the rate of decomposition.…”

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Crystal growth of Cu2ZnSnS4 solar cell absorber by chemical vapor transport with I2

Colombara

Delsante

Borzone

et al. 2013

Journal of Crystal Growth

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Single crystals of Cu 2 ZnSnS 4 have been produced within sealed quartz ampoules via the chemical vapour transport technique using I 2 as the transporting agent. The effects of temperature gradient and I 2 load on the crystal habit and composition are considered. Crystals have been analysed with XRD, SEM, and TEM for compositional and structural uniformities at both microscopic and nanoscopic levels. The synthesized crystals have suitable (I 2 -load dependent) properties and are useful for further solar absorber structural and physical characterizations. A new chemical vapour transport method based on longitudinally isothermal treatments is attempted. Based on a proposed simplistic mechanism of crystal growth, conditions for crystal enlargement with the new method are envisaged.

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Section: Discussioncontrasting

confidence: 90%

Section: Discussionmentioning

confidence: 99%

Crystal growth of Cu2ZnSnS4 solar cell absorber by chemical vapor transport with I2

Colombara

Delsante

Borzone

et al. 2013

Journal of Crystal Growth

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“…The single crystals of (Pb,Cd)Te solid solution containing 2% of CdTe as well as pure PbTe were grown by SSVG method at the Institute of Physics PAS [8][9][10][11]. The structure quality of samples and the chemical composition of the (Pb,Cd)Te solid solution were determined by X-ray powder diffraction utilizing X'Pert Philips (PANalytical) diffractometer and the Cu K α1 radiation.…”

Section: Experimental and Calculation Detailsmentioning

confidence: 99%

“…However, CdTe is a semiconductor crystallizing in the zinc blende structure and the difference in PbTe and CdTe crystal symmetry for many years was a reason for serious difficulties in a growth of (Pb,Cd)Te solid solution. Recent successful growth of big, metastable (Pb,Cd)Te crystals with the RS structure by self-selecting vapour growth (SSVG) method in the Institute of Physics PAS changed this situation [8][9][10][11]. Due to the application of SSVG technique solid solution containing up to 12% of CdTe can be obtained in the form of single crystals with the volume exceeding 1 cm 3 .…”

Section: Introductionmentioning

confidence: 99%

Inelastic X-Ray Scattering Studies of Phonon Dispersion in PbTe and (Pb,Cd)Te Solid Solution

et al. 2016

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PbTe and its solid solution (Pb,Cd)Te containing 2% of CdTe and PbTe grown by self-selecting vapour growth technique were investigated by inelastic X-ray scattering using synchrotron radiation. The ID28 beamline at ESRF with the incident photon energy of 17794 eV and the energy resolution of 3 meV was applied for that purpose. The measurements were performed at room temperature along [001]-type high symmetry direction in the Brillouin zone. In spite of a very low energy of phonon branches they can be determined by inelastic X-ray scattering with a high accuracy. The transversal acoustic phonon dispersion obtained by inelastic X-ray scattering corresponds well to those resulting from inelastic neutron scattering measurements and ab initio calculations. Apart from expected structures corresponding to the bulk phonons an additional scattering related to the crystal surface properties was observed in the inelastic X-ray scattering spectra. The analysis performed with the use of secondary ion mass spectroscopy technique demonstrated a presence of a thin oxide layer at sample surfaces.

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“…The bulk single crystals of Pb 1−x Cd x Te were grown in the Institute of Physics, Polish Academy of Sciences in Warsaw by self-selecting vapor growth (SSVG) method which is marked by near equilibrium growth conditions [7]. This method provides most favorable growth conditions, as the growing crystal contacts exclusively with its own source material of the same composition.…”

Section: Materials and Experimental Conditionsmentioning

confidence: 99%

Photoemission spectra of frozen rock salt Pb1−xCdxTe crystal

Orłowski

Szczerbakow

Kowalski

et al. 2011

Journal of Electron Spectroscopy and Related Phenomena

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a b s t r a c tThe bulk single crystals of Pb 1−x Cd x Te were obtained by self-selecting vapor growth (SSVG) method with proper quenching. Tunable high energy X-ray photoemission spectroscopy (THE-XPS) and ultraviolet photoemission spectroscopy (UPS) were applied to study the crystals electronic structure of valence band and core level regions. The valence band density of states distribution spectra remarkably changes with the crystal composition. In most cases obtained valence band spectra of ternary crystal with dominating of ionic bonding can be in first approximation treated as a sum of the components spectra. In the case of measured Pb 1−x Cd x Te ternary crystal this first order approximation does not follow the rule and inclination of ternary crystal spectra possesses some differences from the sum of spectra measured for crystal PbTe and CdTe. The increase of Cd contents in the crystals leads to appearance of an additional density of states in the large part of the valence band, for binding energy range up to 10 eV.

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Self-selecting vapour growth of bulk crystals – Principles and applicability

Cited by 58 publications

References 37 publications

Crystal growth of Cu2ZnSnS4 solar cell absorber by chemical vapor transport with I2

Crystal growth of Cu2ZnSnS4 solar cell absorber by chemical vapor transport with I2

Inelastic X-Ray Scattering Studies of Phonon Dispersion in PbTe and (Pb,Cd)Te Solid Solution

Photoemission spectra of frozen rock salt Pb1−xCdxTe crystal

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