Self-powered solar-blind ultraviolet photodetector based on α-Ga₂O₃ nanorod arrays fabricated by the water bath method

Abstract

In this paper, α-Ga2O3 nanorod arrays (NRAs) with preferential growth along the (110) direction were successfully prepared on the FTO substrate by the water bath method. With the help of a scanning electron microscope (SEM), X-ray diffractometer (XRD), and Raman spectrometer (Raman), the crystal structure and morphology characteristics of α-Ga2O3 NRAs were studied. On this basis, a photoelectrochemical (PEC) solar-blind ultraviolet photodetector based on the α-Ga2O3 NRAs was fabricated, and the photoelectric performance of the device was analyzed in detail through the PEC test system, and the working mechanism of the device was further discussed. The results show that the prepared α-Ga2O3 NRAs have good crystal quality which is closely arranged on the substrate and a quadrangular prism shape from the top view. The constructed α-Ga2O3 NRAs PEC photodetector shows typical solar-blind ultraviolet response characteristics and stable self-powered ability. Meanwhile, the device exhibited a high photo-dark current ratio (PDCR), responsivity (R) and detectivity (D*) of 1.01×103, 11.34 mA/W and 2.68×1011 Jones, respectively, as well as superior wavelength selectivity and fast response. This work confirms that α-Ga2O3 NRAs prepared by the water bath method have potential application prospects in highly sensitive and fast response PEC self-powered solar-blind ultraviolet photodetectors.

High-Performance Self-Powered Photoelectrochemical Ultraviolet Photodetectors Based on an In2O3 Nanocube Film

“…The improved self-powered photoresponse is attributed to the increased photogenerated carrier separation efficiency and accelerated carrier transport of in situ-grown In 2 O 3 NCF photoanodes without a nonconductive binder. The photoresponse of self-powered In 2 O 3 NCF PEC UV PDs also exceeds that of some reported PEC UV PDs, such as p-AlGaN/n-GaN nanorod arrays (22.5 mA/W) and α-Ga 2 O 3 nanorod arrays (11.34 mA/W). A constant responsivity over a wide range of light intensities is an important property for a PD and can be represented by the linear dynamic range (LDR) .…”

“…However, both In 2 O 3 PEC UV PDs exhibited inferior self-powered performance with a low photoresponse and slow response speed, which could be attributed to strong photogenerated carrier recombination and sluggish carrier transport induced by the nonconductive binder. Therefore, it is interesting to construct high-performance, self-powered In Here, In 2 O 3 nanocube film (NCF) photoanodes were synthesized by a simple hydrothermal method with a calcining process, 42 and the self-powered photoresponse of In 2 O 3 NCF PEC UV PDs was investigated. The photoresponse behavior of In 2 O 3 NCF PEC UV PDs was evaluated by using a PEC system, which is a standard three-electrode system, as shown in Scheme 1.…”

“…Here, In 2 O 3 nanocube film (NCF) photoanodes were synthesized by a simple hydrothermal method with a calcining process, and the self-powered photoresponse of In 2 O 3 NCF PEC UV PDs was investigated. The photoresponse behavior of In 2 O 3 NCF PEC UV PDs was evaluated by using a PEC system, which is a standard three-electrode system, as shown in Scheme .…”

Photoelectrochemical properties of self-powered corundum-structured Ga2O3 nanorod array/fluorine-doped SnO2 photodetectors modulated by precursor concentrations

“…Among polymorphs of Ga 2 O 3 , corundum-structured Ga 2 O 3 (α-Ga 2 O 3 ) and monoclinic Ga 2 O 3 (β-Ga 2 O 3 ) are usually utilized as photosensitive materials [1,2,. However, in comparison to the most stable β-Ga 2 O 3 , metastable-phase α-Ga 2 O 3 has lower fabrication temperature [1,2,[16][17][18][19][20][21][22][23][24][25][26][27][28][29][30]. Therefore, α-Ga 2 O 3 based solar-blind UV photodetectors have been paid more attention in recent studies [2,[16][17][18][19][20][21][22][23][24][25][26][27][28][29][30].…”

Oxygen-vacancy-dependent high-performance α-Ga2O3 nanorods photoelectrochemical deep UV photodetectors

“…There are six different crystal phases of Ga 2 O 3 , including α, β, γ, ε, δ and κ [11]. Ga 2 O 3 photodetectors are mainly focused on solid-state metal-semiconductor-metal structures [12] and heterojunctions [13], and few works have been reported on Ga 2 O 3 PEC photodetectors [14][15][16][17]. The photoresponse of Ga 2 O 3 PEC photodetectors relies on the crystalline structure.…”