Two-dimensional (2D) bismuth oxychalcogenide (Bi2O2X, X refers to S, Se, and Te) is one type of rising semiconductor with excellent electrical transport properties, high photoresponse, and good air stability. However, the research on 2D Bi2O2S is limited. In this work, ultrathin Bi2O2S nanosheets are synthesized by a facile and eco-friendly chemical synthesis method at room temperature. The thickness and lateral sizes are 2–4 nm and 20–40 nm, respectively. The 2D ultrathin Bi2O2S nanosheets have a broad absorption spectrum from ultraviolet (UV) to near-infrared (NIR). Photoelectrochemical (PEC) photodetectors based on 2D Bi2O2S nanosheets are fabricated by a simple drop-casting method. The 2D Bi2O2S-based PEC photodetectors show excellent photodetection performance with a broad photoresponse spectrum from 365 to 850 nm, a high responsivity of 13.0 mA/W, ultrafast response times of 10/45 ms, and good long-term stability at a bias voltage of 0.6 V, which are superior to most 2D material-based PEC photodetectors. Further, the 2D Bi2O2S PEC photodetector can function as a high-performance self-powered broadband photodetector. Moreover, the photoresponse performance can be effectively tuned by the concentration and the kind of electrolyte. Our results demonstrate that 2D Bi2O2S nanosheets hold great promise for application in high-performance optoelectronic devices.
Two-dimensional (2D) InSe is a good candidate for high-performance photodetectors due to its good light absorption and electrical transport properties. However, 2D InSe photodetectors usually endure a large driving voltage, and 2D InSe-based heterojunction photodetectors require complex fabrication processes. Here, we demonstrate high-performance self-powered InSe-based photoelectrochemical (PEC) photodetectors using electrochemical intercalated ultrathin InSe nanosheets. The ultrathin InSe nanosheets have good crystallinity with a uniform thickness of 1.4–2.1 nm, lateral size up to 18 μm, and yield of 82%. The self-powered InSe-based PEC photodetectors show broadband photoresponse ranging from 365 to 850 nm. The photoresponse of InSe-based PEC photodetectors is boosted by suppressing p-type doping of the intercalator with annealing, which improves the electrical properties and facilitates electron transport from InSe to the electrode. The self-powered annealed InSe (A-InSe) PEC photodetectors show a high responsivity of 10.14 mA/W and fast response speed of 2/37 ms. Moreover, the self-powered PEC photodetectors have good stability under UV-NIR irradiation. Furthermore, the photoresponse can be effectively tuned by the concentration and kind of electrolyte. The facile large-scale fabrication and good photoresponse demonstrate that 2D ultrathin InSe can be applied in high-performance optoelectronic devices.
Ultraviolet photodetectors (UV PDs) have attracted extensive attention owing to their wide applications, such as optical communication, missile tracking, and fire warning. Wide-bandgap metal-oxide semiconductor materials have become the focus of high-performance UV PD development owing to their unique photoelectric properties and good stability. Compared with other wide-bandgap materials, studies on indium oxide (In2O3)-based photoelectrochemical (PEC) UV PDs are rare. In this work, we explore the photoresponse of In2O3-based PEC UV PDs for the first time. In2O3 microrods (MRs) were synthesized by a hydrothermal method with subsequent annealing. In2O3 MR PEC PDs have good UV photoresponse, showing a high responsivity of 21.19 mA/W and high specific detectivity of 2.03 × 1010 Jones, which surpass most aqueous-type PEC UV PDs. Moreover, In2O3 MR PEC PDs have good multicycle and long-term stability irradiated by 365 nm. Our results prove that In2O3 holds great promise in high-performance PEC UV PDs.
Photoelectrochemical‐type visible‐blind ultraviolet photodetectors (PEC VBUV PDs) have gained ever‐growing attention due to their simple fabrication processes, uncomplicated packaging technology, and high sensitivity. However, it is still challenging to achieve high‐performance PEC VBUV PDs based on a single material with good spectral selectivity. Here, it is demonstrated that individual ultrathin indium oxide (In2O3) nanosheets (NSs) are suitable for designing high‐performance PEC VBUV PDs with high responsivity and UV/visible rejection ratio for the first time. In2O3 NSs PEC PDs show excellent UV photodetection capability with an ultrahigh photoresponsivity of 172.36 mA W−1 and a high specific detectivity of 4.43 × 1011 Jones under 254 nm irradiation, which originates from the smaller charge transfer resistance (Rct) at the In2O3 NSs/electrolyte interface. The light absorption of In2O3 NSs takes a blueshift due to the quantum confinement effect, granting good spectral selectivity for visible‐blind detection. The UV/visible rejection ratio of In2O3 NSs PEC PDs is 1567, which is 30 times higher than that of In2O3 nanoparticles (NPs) and exceeds all recently reported PEC VBUV PDs. Moreover, In2O3 NSs PEC PDs show good stability and good underwater imaging capability. The results verify that ultrathin In2O3 NSs have potential in underwater optoelectronic devices.
PURPOSE. To investigate diabetic optic neuropathy (DON) prevalence and risk factors in Chinese diabetic retinopathy (DR) patients. METHODS. This retrospective study included 1067 eyes (550 patients) that underwent ocular imaging. The diabetes duration, systolic blood pressure (SBP), hemoglobin A1c (HbA1c), and high-density lipoprotein (HDL) were also recorded simultaneously. RESULTS. A total of 410 eyes with DON and 657 eyes without DON were included (38.4% DON prevalence). DON eyes were classified as having diabetic papillopathy (DP), optic disc neovascularization (NVD), anterior ischemic optic neuropathy (AION), or optic atrophy (OA). Proliferative DR eyes had a higher DON prevalence than nonproliferative DR eyes (P < 0.001). Diabetes duration, SBP, and HbA1c were higher in DON patients than in non-DON patients (all P < 0.001). Additionally, HDL was lower in patients with DON (0.74 6 0.13 mM) than in those without DON (1.00 6 0.24 mM, P < 0.001). HbA1c levels were greater in AION patients (10.00 6 1.53% [85.76 6 16.71 mmol/mol]) than in DP patients (8.78 6 1.97% [72.45 6 21.55 mmol/mol], P ¼ 0.017); central foveal thickness (CFT) significantly varied among groups (P < 0.001). Increased age, diabetes duration, SBP, CFT, and DR severity were risk factors for DON; and increased HbA1c was a risk factor for NVD, AION, and OA (all P < 0.05). CONCLUSIONS. Our study results strengthen the argument that increased age, diabetes duration, SBP, CFT, DR severity, and HbA1c are all risk factors for DON in patients with DR.
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