Self-powered CsPbBr3 nanowire photodetector with a vertical structure

Zhou, Hai; Song, Zhaoning; Grice, Corey R.; Chen, Cong; Zhang, Jun; Zhu, Yifan; Liu, Ronghuan; Wang, Hao; Yan, Yanfa

doi:10.1016/j.nanoen.2018.09.040

Cited by 119 publications

(80 citation statements)

References 26 publications

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“…Once ITO NWs are incorporated into the device channel, the responsivity is greatly improved to 4.9 × 10 6 A W −1 . Notably, this responsivity is already 5 orders of magnitude higher than the ones of typical IPH photodetectors using photovoltaic structures, and 2 orders of magnitude higher than those of CsPbBr 3 ‐based photogating devices . At the same time, it is also critical to assess the response time of the devices.…”

Section: Resultsmentioning

confidence: 98%

“…With the improved material stability, most of the early works focused on the fabrication of IHP photodetectors utilizing the photovoltaic device structure. Owing to the poor conductivity of IHPS as well as the lack of appropriate photogain mechanism, the obtained IHP devices usually exhibit low responsivities ( R ) with the values of ≈10 −1 to 10 1 A W −1 , making the detection of weak optical signals difficult. To solve this problem, one alternative way is to employ the hybrid phototransistor structure by combining a high‐mobility conducting layer with a perovskite light absorption layer.…”

Section: Introductionmentioning

confidence: 99%

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Substantially Improving Device Performance of All‐Inorganic Perovskite‐Based Phototransistors via Indium Tin Oxide Nanowire Incorporation

Wang

Zou

Wan

et al. 2020

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In the past decade, organic-inorganic metal halide perovskites (OMHPs) have drawn tremendous attention because of their extraordinary optoelectronic properties, including high All-inorganic halide perovskites (IHPs) have attracted enormous attention due to their intrinsically high optical absorption coefficient and superior ambient stabilities. However, the photosensitivity of IHP-based photodetectors is still restricted by their poor conductivities. Here, a facile design of hybrid phototransistors based on the CsPbBr 3 thin film and indium tin oxide (ITO) nanowires (NWs) integrated into a InGaZnO channel in order to achieve both high photoresponsivity and fast response is reported. The metallic ITO NWs are employed as electron pumps and expressways to efficiently extract photocarriers from CsPbBr 3 and inject electrons into InGaZnO. The obtained device exhibits the outstanding responsivity of 4.9 × 10 6 A W −1 , which is about 100-fold better than the previous best results of CsPbBr 3 -based photodetectors, together with the fast response (0.45/0.55 s), long-term stability (200 h in ambient), and excellent mechanical flexibility. By operating the phototransistor in the depletion regime, an ultrahigh specific detectivity up to 7.6 × 10 13 Jones is achieved. More importantly, the optimized spin-coating manufacturing process is highly beneficial for achieving uniform InGaZnO-ITO/perovskite hybrid films for high-performance flexible detector arrays. All these results can not only indicate the potential of these hybrid phototransistors but also provide a valuable insight into the design of hybrid material systems for high-performance photodetection.

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Section: Resultsmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Substantially Improving Device Performance of All‐Inorganic Perovskite‐Based Phototransistors via Indium Tin Oxide Nanowire Incorporation

Wang

Zou

Wan

et al. 2020

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“…This is probably because the bias voltage will not only increase the photocurrent but also enhance the dark current. The maximum value of R increases from 473 mA W −1 at 0 V to 977 mA W −1 at 1 V. To meet the requirements of photodetection in a wide light intensity range, the linear dynamic range (LDR) is an important figure‐of‐merit, which is given by the following formula [ 40 ]

LDR = 20 log \frac{J_{ph}}{J_{d}}

where J ph and J d represent the photocurrent and dark current density, respectively. As shown in Figure 3e, the NIO device exhibits a broad linear response range from 0.22 µW cm −2 to 80 mW cm −2 , and the measured LDR can reach 110 dB, while the theoretical LDR calculated by dark current density even attain 131 dB.…”

Section: Figurementioning

confidence: 99%

Nested Inverse Opal Perovskite toward Superior Flexible and Self‐Powered Photodetection Performance

et al. 2020

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“…In addition, the bandgap and carrier lifetime experiment values of CsPbI x Br 3− x are acquired from literatures. [ 35–42 ]…”

Section: Resultsmentioning

confidence: 99%

All‐Inorganic CsPbI_xBr₃₋_x Perovskite Solar Cells: Crystal Anisotropy Effect

Zhao

Lin

et al. 2020

Advcd Theory and Sims

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Understanding the crystal anisotropy effect of materials on optical and electrical properties is crucial for further comprehension of the device operating mechanism and device performance improvement. In this study, a detailed theoretical analysis is performed to explore the crystal anisotropy effect on the performance of perovskite solar cells by employing state‐of‐the‐art multiscale simulations connecting from the material (first‐principle theory) to the device (drift‐diffusion model). According to the results obtained from first‐principle calculation, the mobility and absorption coefficient of CsPbIBr2 and CsPbI2Br along the [001] orientation are larger than those along the [100] orientation, suggesting that the transport properties and optical properties along the [001] orientation are superior to those along the [100] orientation. According to the results obtained from the drift‐diffusion model, owing to the superior optical and transport characters along the [001] direction, the optimal power conversion efficiencies (PCEs) of CsPbI2Br (18.88%) and CsPbIBr2 (16.42%) solar cells can be obtained. In addition, the two‐terminal CsPbIxBr3‐x/silicon tandem solar cell is also investigated. By utilizing CsPbIBr2/silicon and CsPbI2Br/silicon tandem structures along the [001] orientation, ultrahigh efficiencies are achieved up to 26.32% and 31.39%, respectively. Therefore, the [001] crystal orientation of CsPbIBr2 and CsPbI2Br is more suitable for further applications of optoelectronic devices.

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Self-powered CsPbBr3 nanowire photodetector with a vertical structure

Cited by 119 publications

References 26 publications

Substantially Improving Device Performance of All‐Inorganic Perovskite‐Based Phototransistors via Indium Tin Oxide Nanowire Incorporation

Substantially Improving Device Performance of All‐Inorganic Perovskite‐Based Phototransistors via Indium Tin Oxide Nanowire Incorporation

Nested Inverse Opal Perovskite toward Superior Flexible and Self‐Powered Photodetection Performance

All‐Inorganic CsPbI_xBr₃₋_x Perovskite Solar Cells: Crystal Anisotropy Effect

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Self-powered CsPbBr3 nanowire photodetector with a vertical structure

Cited by 119 publications

References 26 publications

Substantially Improving Device Performance of All‐Inorganic Perovskite‐Based Phototransistors via Indium Tin Oxide Nanowire Incorporation

Substantially Improving Device Performance of All‐Inorganic Perovskite‐Based Phototransistors via Indium Tin Oxide Nanowire Incorporation

Nested Inverse Opal Perovskite toward Superior Flexible and Self‐Powered Photodetection Performance

All‐Inorganic CsPbIxBr3−x Perovskite Solar Cells: Crystal Anisotropy Effect

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All‐Inorganic CsPbI_xBr₃₋_x Perovskite Solar Cells: Crystal Anisotropy Effect