Self-power position-sensitive detector with fast optical relaxation time and large position sensitivity basing on the lateral photovoltaic effect in tin diselenide films

Xu, Tongtong; Han, Yaping; Le, Lei; Xu, Jie; Fu, Qiang; He, He; Song, Bin; Gai, Qiying; Wang, Xianjie

doi:10.1016/j.jallcom.2019.03.293

Cited by 27 publications

(12 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The lack of any signal at 486.1 eV, , corresponding to the vertical dashed line of Figure a, confirms the absence of Sn–Se chemical bonds in the annealed sample. These results are congruent with O 1s and Se 3d core-level spectra of Figure b,c respectively.…”

Section: Resultssupporting

confidence: 56%

Bidimensional Engineered Amorphous a-SnO₂ Interfaces: Synthesis and Gas Sensing Response to H₂S and Humidity

et al. 2022

View full text Add to dashboard Cite

Two-dimensional (2D) transition metal dichalcogenides (TMDs) and metal chalcogenides (MCs), despite their excellent gas sensing properties, are subjected to spontaneous oxidation in ambient air, negatively affecting the sensor’s signal reproducibility in the long run. Taking advantage of spontaneous oxidation, we synthesized fully amorphous a -SnO 2 2D flakes (≈30 nm thick) by annealing in air 2D SnSe 2 for two weeks at temperatures below the crystallization temperature of SnO 2 ( T < 280 °C). These engineered a -SnO 2 interfaces, preserving all the precursor’s 2D surface-to-volume features, are stable in dry/wet air up to 250 °C, with excellent baseline and sensor’s signal reproducibility to H 2 S (400 ppb to 1.5 ppm) and humidity (10–80% relative humidity (RH)) at 100 °C for one year. Specifically, by combined density functional theory and ab initio molecular dynamics, we demonstrated that H 2 S and H 2 O compete by dissociative chemisorption over the same a -SnO 2 adsorption sites, disclosing the humidity cross-response to H 2 S sensing. Tests confirmed that humidity decreases the baseline resistance, hampers the H 2 S sensor’s signal (i.e., relative response (RR) = R a / R g ), and increases the limit of detection (LOD). At 1 ppm, the H 2 S sensor’s signal decreases from an RR of 2.4 ± 0.1 at 0% RH to 1.9 ± 0.1 at 80% RH, while the LOD increases from 210 to 380 ppb. Utilizing a suitable thermal treatment, here, we report an amorphization procedure that can be easily extended to a large variety of TMDs and MCs, opening extraordinary applications for 2D layered amorphous metal oxide gas sensors.

show abstract

Section: Resultssupporting

confidence: 56%

Bidimensional Engineered Amorphous a-SnO₂ Interfaces: Synthesis and Gas Sensing Response to H₂S and Humidity

et al. 2022

View full text Add to dashboard Cite

show abstract

“…For instance, the surface of the top layer in the heterojunction can be modified to improve the light absorption and decrease the resistivity, leading to an increased LPV. , Other research groups attempted to tune the LPV by applying external fields. − The majority of these works focused on using different materials to form high-quality heterojunctions with a large built-in voltage to intensify the separation of the photoexcited electron–hole (e-h) pairs. Four heterostructure types are often used to generate high LPVs, including metal–semiconductor, − metal-oxide–semiconductor, , oxide/insulator–semiconductor, ,, and wide/narrow band semiconductor–narrow band semiconductor. , Among them, silicon carbide on silicon (SiC/Si) heterostructures are promising platforms for generating high LPV. To date, several ultrasensitive LPE-based position-sensitive detectors utilizing SiC/Si have been reported. − SiC has excellent mechanical and electrical properties and chemical inertness that make it suitable for a wide range of applications, especially for sensing devices operating in harsh environments .…”

Section: Introductionmentioning

confidence: 99%

Giant Lateral Photovoltage in a SiC/Si Heterojunction with a Micro Free-Standing SiC Serpentine Beam

Nguyen

Pham

et al. 2022

ACS Appl. Energy Mater.

View full text Add to dashboard Cite

The lateral photovoltaic effect (LPE) is being explored as a promising method for energy harvesting and self-powered sensing. Herein we propose a free-standing SiC serpentine micro beam structure that is capable of generating a giant lateral photovoltage (LPV) of 191 mV under illumination from a 637 nm laser. We observed a photoresponse from the SiC beam even under a relatively weak illumination of 1 μW. The unique design of the free-standing SiC micro beam hinders the diffusion of photogenerated charge carriers, resulting in a high charge carrier concentration gradient, capable of generating a giant LPV. Our findings in this work demonstrate the potential for the development of miniaturized energy generators and self-powered sensors from the SiC/Si heterojunction.

show abstract

“…A large number of potential applications have been demonstrated based on the LPE such as surface profiling, motion tracking, and angular displacement monitoring. , Position-sensitive detector (PSD), one of the most common application of the LPE, has significantly progressed over the last few decades due to the development of technologies for the synthesis of new materials and heterostructures. LPE-based PSDs can be divided into four categories based on the type of heterostructures including metal–semiconductor (MS) (e.g., Ti (Co,Cu)/Si, graphene/Si, MoS 2 /Si − ), metal-oxide–semiconductor (MOS) (e.g., Co/SiO 2 /Si, SnSe/SiO 2 /Si), oxide/insulator–semiconductor (e.g., Fe 3 O 4 /Si, Bi 2 Te 2.7 Se 0.3 , ITO/Si), and wide band/narrow band semiconductor–narrow band semiconductor (e.g., SiC/Si, − Sb 2 Se 3 /Si, SnSe 2 /Si). Most studies attempted to enhance the LPE by selecting appropriate materials to form high-quality junctions with a large built-in voltage.…”

Section: Introductionmentioning

confidence: 99%

Generation of a Charge Carrier Gradient in a 3C-SiC/Si Heterojunction with Asymmetric Configuration

Nguyen

Foisal

et al. 2021

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

It is critical to investigate the charge carrier gradient generation in semiconductor junctions with an asymmetric configuration, which can open a new platform for developing lateral photovoltaic and self-powered devices. This paper reports the generation of a charge carrier gradient in a 3C-SiC/Si heterojunction with an asymmetric electrode configuration. 3C-SiC/Si heterojunction devices with different electrode widths were illuminated by laser beams (wavelengths of 405, 521, and 637 nm) and a halogen bulb. The charge carrier distribution along the heterojunction was investigated by measuring the lateral photovoltage generated when the laser spot scans across the 3C-SiC surface between the two electrodes. The highest lateral photovoltage generated is 130.58 mV, measured in the device with an electrode width ratio of 5 and under 637 nm wavelength and 1000 μW illumination. Interestingly, the lateral photovoltage was generated even under uniform illumination at zero bias, which is unusual for the lateral photovoltage, as it can only be generated when unevenly distributed photogenerated charge carriers exist. In addition, the working mechanism and uncovered behavior of the lateral photovoltaic effect are explained based on the generation and separation of electron−hole pairs under light illumination and charge carrier diffusion theory. The finding further elaborates the underlying physics of the lateral photovoltaic effect in nano-heterojunctions and explores its potential in developing optoelectronic sensors.

show abstract

Self-power position-sensitive detector with fast optical relaxation time and large position sensitivity basing on the lateral photovoltaic effect in tin diselenide films

Cited by 27 publications

References 36 publications

Bidimensional Engineered Amorphous a-SnO₂ Interfaces: Synthesis and Gas Sensing Response to H₂S and Humidity

Bidimensional Engineered Amorphous a-SnO₂ Interfaces: Synthesis and Gas Sensing Response to H₂S and Humidity

Giant Lateral Photovoltage in a SiC/Si Heterojunction with a Micro Free-Standing SiC Serpentine Beam

Generation of a Charge Carrier Gradient in a 3C-SiC/Si Heterojunction with Asymmetric Configuration

Contact Info

Product

Resources

About

Self-power position-sensitive detector with fast optical relaxation time and large position sensitivity basing on the lateral photovoltaic effect in tin diselenide films

Cited by 27 publications

References 36 publications

Bidimensional Engineered Amorphous a-SnO2 Interfaces: Synthesis and Gas Sensing Response to H2S and Humidity

Bidimensional Engineered Amorphous a-SnO2 Interfaces: Synthesis and Gas Sensing Response to H2S and Humidity

Giant Lateral Photovoltage in a SiC/Si Heterojunction with a Micro Free-Standing SiC Serpentine Beam

Generation of a Charge Carrier Gradient in a 3C-SiC/Si Heterojunction with Asymmetric Configuration

Contact Info

Product

Resources

About

Bidimensional Engineered Amorphous a-SnO₂ Interfaces: Synthesis and Gas Sensing Response to H₂S and Humidity

Bidimensional Engineered Amorphous a-SnO₂ Interfaces: Synthesis and Gas Sensing Response to H₂S and Humidity