Generation of a Charge Carrier Gradient in a 3C-SiC/Si Heterojunction with Asymmetric Configuration

Nguyen, Tuan-Hung; Nguyen, Thanh; Foisal, Abu Riduan Md; Dinh, Toan; Nguyen, Hong-Quan; Streed, Erik; Vu, Trung-Hieu; Tanner, Philip; Dau, Van Thanh; Nguyen, Nam‐Trung; Dao, Dzung Viet

doi:10.1021/acsami.1c15942

Cited by 11 publications

(9 citation statements)

References 58 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For 4H-SiC, electron mobility is 4 times higher than that of the holes when parallel to the c -axis but is of equal magnitude when parallel to the c -axis. On the other hand, 3C-SiC is predominantly driven by electrons with mobility 8 times larger than hole mobility in either orientation. − For graphitic carbons with high tortuosity, like the samples synthesized in this work, the stacking is not explicitly defined, making it difficult to fully understand the probability of the coexistence of charge carriers. The work of Ramadin suggested that the carbon-based composites have charge carriers that transition from p- to n-type as the carbon content increases with a threshold of ∼18% …”

Section: Resultsmentioning

confidence: 97%

SiOC-Based Strain Gauge with Ultrahigh Piezoresistivity at High Temperatures

Ricohermoso

Solano‐Arana

Fasel

et al. 2023

ACS Appl. Eng. Mater.

View full text Add to dashboard Cite

The nonlinear response of strain gauges at high temperatures has restricted their applications despite their highprecision and real-time measurement capability. This work addresses this limitation by utilizing the easy preparative access and versatility of silicon oxycarbide-based (SiOC) thin films as strain gauges offering outstanding high-temperature robustness and giant piezoresistive response. The sensitivity of the strain gauge is assessed with continuous cyclic loads, tensile and compressive, resulting in gauge factors of ca. 2000−5000. The linearity of the response is preserved up to 700 °C with a shift in the electrical response occurring at temperatures beyond 500 °C, switching the SiOC film from semiconducting to conducting behavior. This change causes a drop in the gauge factor of the SiOC-based thin films; nevertheless, it is still significantly higher than that of metallic and Si-based commercial strain gauges. Notably, the studied thin films can regulate the effect of temperature enabling them to be a highly sensitive device with good reversibility and replicability in high-temperature environments. Furthermore, the electrical shift at 460 °C broadens the application of the SiOC film as a currentlimiting device and temperature sensor.

show abstract

Section: Resultsmentioning

confidence: 97%

SiOC-Based Strain Gauge with Ultrahigh Piezoresistivity at High Temperatures

Ricohermoso

Solano‐Arana

Fasel

et al. 2023

ACS Appl. Eng. Mater.

View full text Add to dashboard Cite

show abstract

“…In addition to the electrode spacing, the electrode size can also have an influence on the LPE. In the case of an asymmetric electrodes configuration, i.e., the electrodes have different sizes, the device can generate lateral photovoltage (LPV) even under uniform light, unlike normal LPV, which can only be generated under nonuniform illumination . In our work, the electrodes are of the same size and only serve as electrical contacts.…”

Section: Resultsmentioning

confidence: 99%

“…In the case of an asymmetric electrodes configuration, i.e., the electrodes have different sizes, the device can generate lateral photovoltage (LPV) even under uniform light, unlike normal LPV, which can only be generated under nonuniform illumination. 35 In our work, the electrodes are of the same size and only serve as electrical contacts. The function of the electrodes as electrical contacts is confirmed by the linear current−voltage (I−V) curves as shown in Figure 2a.…”

mentioning

confidence: 99%

Ultrasensitive Self-Powered Position-Sensitive Detector Based on n-3C-SiC/p-Si Heterojunctions

Nguyen

Foisal

et al. 2022

ACS Appl. Electron. Mater.

Self Cite

View full text Add to dashboard Cite

Cubic silicon carbide (3C-SiC) on silicon (Si) is an excellent platform for developing sensors that can function in a harsh environment due to its superior mechanical, electrical, chemical, optoelectronic properties and low wafer cost. Here, we report a position-sensitive detector (PSD) based on the heterojunction formed between n-type SiC and p-type Si. The PSD utilizes the lateral photovoltaic effect (LPE) with a linear dependence of LPE on laser spot positions. The position sensitivity is found to be 554.82 mV/mm at zero bias conditions under an illumination of 200 μW (637 nm), which is among the most sensitive LPE-based PSDs to date. The generation of the lateral photovoltage (LPV) under light illumination is investigated by examining the band diagram of the 3C-SiC/Si heterojunction. The influence of the illumination intensity and wavelength on the position sensitivity is also explained. This work demonstrates a potential application for ultrasensitive, self-powered optoelectronic sensing of the n-3C-SiC/p-Si platform.

show abstract

“…Unlike the polymorphs with high manufacturing cost, i.e., 4H-SiC and 6H-SiC, cubic silicon carbide (3C-SiC) can be easily grown on a Si substrate with high quality and low cost. , Therefore, 3C-SiC has been widely studied for its sensing effects, such as the piezoresistive effect, , thermoresistive effect, lateral photovoltaic effect, and vertical photovoltaic effect . Based on these sensing effects, different types of sensors have been developed, including mechanical sensor, thermal sensor, photodetector, position detector, , and accelerometer …”

Section: Introductionmentioning

confidence: 99%

Vertical Piezo-Optoelectronic Coupling in a 3C-SiC/Si Heterostructure for Self-Powered and Highly Sensitive Mechanical Sensing

Nguyen

Ninh

Nguyen

et al. 2023

ACS Appl. Mater. Interfaces

Self Cite

View full text Add to dashboard Cite

This paper presents a novel self-powered mechanical sensing based on the vertical piezo-optoelectronic coupling in a 3C-SiC/Si heterojunction. The vertical piezo-optoelectronic coupling refers to the change of photogenerated voltage across the 3C-SiC/Si heterojunction upon application of mechanical stress or strain. The effect is elucidated under different photoexcitation conditions and under varying tensile and compressive strains. Experimental results show that the relationship between the vertical photovoltage and applied strain is highly linear, increasing under the tensile strain while decreasing under the compressive strain. The highest sensitivities to tensile and compressive strains are 0.146 and 0.058 μV/ppm/μW, respectively, which are about 220 and 360 times larger than those of the lateral piezo-optoelectronic coupling reported in literatures. These extremely large changes in vertical photovoltages are explained by the alteration in effective mass, energy band shift, and repopulation of photogenerated holes in out-of-plane, in-plane longitudinal, and in-plane transverse directions when strains are exerted on the heterojunction. The significant enhancement of strain sensitivity will pave the way for development of ultrasensitive and selfpowered mechanical sensors based on the proposed vertical piezo-optoelectronic coupling.

show abstract

Generation of a Charge Carrier Gradient in a 3C-SiC/Si Heterojunction with Asymmetric Configuration

Cited by 11 publications

References 58 publications

SiOC-Based Strain Gauge with Ultrahigh Piezoresistivity at High Temperatures

SiOC-Based Strain Gauge with Ultrahigh Piezoresistivity at High Temperatures

Ultrasensitive Self-Powered Position-Sensitive Detector Based on n-3C-SiC/p-Si Heterojunctions

Vertical Piezo-Optoelectronic Coupling in a 3C-SiC/Si Heterostructure for Self-Powered and Highly Sensitive Mechanical Sensing

Contact Info

Product

Resources

About