“…This can be achieved via electroless etching using a suitable template, such as a monolayer of polystyrene spheres [39]. The results are similar to the formation of ordered honeycomb structures during anodization [40, 41]. Fig.…”
Silicon nanowires (SiNWs) were fabricated by the electroless etching of an n-type Si (100) wafer in HF/AgNO3. Vertically aligned and high-density SiNWs are formed on the Si substrates. Various shapes of SiNWs are observed, including round, rectangular, and triangular. The recorded maximum reflectance of the SiNWs is approximately 19.2%, which is much lower than that of the Si substrate (65.1%). The minimum reflectance of the SiNWs is approximately 3.5% in the near UV region and 9.8% in the visible to near IR regions. The calculated band gap energy of the SiNWs is found to be slightly higher than that of the Si substrate. The I–V characteristics of a freestanding SiNW show a linear ohmic behavior for a forward bias up to 2.0 V. The average resistivity of a SiNW is approximately 33.94 Ω cm.
“…This can be achieved via electroless etching using a suitable template, such as a monolayer of polystyrene spheres [39]. The results are similar to the formation of ordered honeycomb structures during anodization [40, 41]. Fig.…”
Silicon nanowires (SiNWs) were fabricated by the electroless etching of an n-type Si (100) wafer in HF/AgNO3. Vertically aligned and high-density SiNWs are formed on the Si substrates. Various shapes of SiNWs are observed, including round, rectangular, and triangular. The recorded maximum reflectance of the SiNWs is approximately 19.2%, which is much lower than that of the Si substrate (65.1%). The minimum reflectance of the SiNWs is approximately 3.5% in the near UV region and 9.8% in the visible to near IR regions. The calculated band gap energy of the SiNWs is found to be slightly higher than that of the Si substrate. The I–V characteristics of a freestanding SiNW show a linear ohmic behavior for a forward bias up to 2.0 V. The average resistivity of a SiNW is approximately 33.94 Ω cm.
“…The Ag + ions in the vicinity of the silicon surface capture electrons from the valence band in silicon and form a deposit of silver nuclei that are uniformly distributed on the surface of the silicon wafer. With further deposition, SiO 2 begins to be formed under these silver nanoclusters 43 and it is subsequently etched away by HF. The silver nanoclusters and the surrounding Si areas act, respectively, as local cathodes and anodes, leading to electroless dendritic growth of silver deposits.…”
Silver dendritic ("fractal") structures exhibit very high fluorescence enhancement, but their nonuniformity limits practical applications. Here, we present a novel, electroless deposition approach to produce uniform silver dendritic nanostructures on silicon for enhanced fluorescence. These metal-modified surfaces were allowed to bind a protein bovine serum albumin (BSA) labeled with the fluorescent dye Deep Purple. The effect of silver nanostructures on fluorescence intensity and lifetime in the presence of a conductive, absorbing substrate was analyzed, and high enhancement factors between 30 and 40 times were found. Such silicon-based structures with high fluorescence enhancement factors are suitable for integration with lab-on-chip and biosensing microelectronic devices.
“…Ag + ions in the vicinity of Si surface capture electrons from the valence band of Si and deposit in the form of metallic Ag nuclei (cathodic reaction), while Si underneath the Ag deposits is locally oxidized into SiO 2 (anodic reaction) and immediately dissolved by HF. This process can be expressed by the following equation: 19,20 4Ag + (aq) + Si 0 (s) + 6F À (aq) -4Ag (s) + SiF 6 2À (aq)…”
A novel catalyst of silver microparticles embedded in a silicon nanowire array support (Ag@SiNW) was prepared by an in situ electroless metal deposition method; it exhibited high selectivity and stability for gas-phase oxidation of high alcohol to its corresponding aldehyde.
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