Self-organized MBE growth of Ge-rich SiGe dots on Si(100)

Schittenhelm, P.; Gail, M.; Abstreiter, G.

doi:10.1016/0022-0248(95)00323-1

Cited by 45 publications

(20 citation statements)

References 15 publications

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“…This transition from uniform layer to island growth in the 3.5-6 eq-ML range agrees reasonably well with the transition observed at 3-5 eq-ML using different deposition techniques and conditions. 4,6 Islands are also seen in a layer deposited at atmospheric pressure to a thickness of about 8 eq-ML, which is the thinnest atmosphericpressure layer available.…”

Section: B Wetting Layermentioning

confidence: 96%

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Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures

Kamins

Carr

Williams

et al. 1997

Journal of Applied Physics

311

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This report summarizes observations of Ge island formation during growth on Si(001) by chemical vapor deposition from germane in the pressure range from 10 Torr to atmospheric pressure in a conventional epitaxial reactor. A four-step growth process is observed: (1) uniform pseudomorphic overlayer (“wetting’’ layer) formation; (2) three-dimensional island growth with a constant aspect ratio; (3) continued island growth with a constant diameter and increasing height; (4) rapid growth of larger, faceted islands. Ostwald ripening of the islands during continued heat treatment after terminating the deposition is slow compared to island formation and growth during deposition for the experimental conditions used.

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Section: B Wetting Layermentioning

confidence: 96%

“…[1][2][3][4] A limited number of reports describes material deposited by chemical vapor deposition ͑CVD͒ at pressures of about 0.1 Torr and below ͑gassource MBE, 5,6 ultrahigh-vacuum CVD, 7 and low-pressure CVD 8 ͒. Another report describes islands formed by liquidphase epitaxy.…”

Section: Introductionmentioning

confidence: 99%

Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures

Kamins

Carr

Williams

et al. 1997

Journal of Applied Physics

311

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“…Several groups have achieved the self-organizing growth of Ge-rich islands on Si by using molecular beam epitaxy ͑MBE͒ or chemical vapor deposition ͑CVD͒. [8][9][10][11][12][13][14][15][16] Apetz et al first grew SiGe dots burried in Si by low-pressure CVD. 8 The size of the dots is about 150 nm which is much larger than the Bohr radius of excitons in Ge and Si.…”

Section: Surface Physics Laboratory Fudan University Shanghai 20043mentioning

confidence: 99%

Germanium dots with highly uniform size distribution grown on Si(100) substrate by molecular beam epitaxy

Wang

Zhu

Liu

et al. 1997

Applied Physics Letters

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The growth of very uniform Ge dots on Si(100) is achieved by using molecular beam epitaxy. The atomic force microscopy and the transmission electron microscopic observations illustrate that the size uniformity of the dots is not worse than ±3%, i.e., the base dimension is 100±3 nm. The Raman spectrum reveals a peak downward shift of Ge-Ge mode caused by the phonon confinement in the Ge dots. A very narrow photoluminescence peak with the width of 1.6 meV at the energy of 0.767 eV is observed at the temperature of 16 K. We attribute this peak to the free exciton longitudinal acoustic phonon replica originated from the Ge dots.

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“…5 Recent progress in site-controlled growth of SiGe QDs on pre-patterned Si(001) substrates, [6][7][8][9][10] and their commensurable embedding into photonic crystal slabs 11 has opened a unique route toward deterministic positioning of individual SiGe QDs in photonic crystal resonators. Yet, optical studies were mainly performed on ensembles of SiGe QDs, which cause broadening of the photoluminescence (PL) lines due to variations in QD size [12][13][14][15][16] and local composition. 17 Spectroscopy on single QDs appears to be a domain of III-V [18][19][20] and II-VI 21,22 heteromaterials, whereas optical measurements on isolated group-IV nanostructures were only reported for dispersed porous-Si grains 23 and Si pillars in an oxide matrix.…”

mentioning

confidence: 99%

Optical properties of individual site-controlled Ge quantum dots

Grydlik

Brehm

Tayagaki

et al. 2015

Applied Physics Letters

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We report photoluminescence (PL) experiments on individual SiGe quantum dots (QDs) that were epitaxially grown in a site-controlled fashion on pre-patterned Si(001) substrates. We demonstrate that the PL line-widths of single QDs decrease with excitation power to about 16 meV, a value that is much narrower than any of the previously reported PL signals in the SiGe/Si heterosystem. At low temperatures, the PL-intensity becomes limited by a 25 meV high potential-barrier between the QDs and the surrounding Ge wetting layer (WL). This barrier impedes QD filling from the WL which collects and traps most of the optically excited holes in this type-II heterosystem.

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Self-organized MBE growth of Ge-rich SiGe dots on Si(100)

Cited by 45 publications

References 15 publications

Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures

Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures

Germanium dots with highly uniform size distribution grown on Si(100) substrate by molecular beam epitaxy

Optical properties of individual site-controlled Ge quantum dots

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