Self-optimizing passively, actively and hybridly mode-locked diode lasers

Pilny, Rouven H.; Döpke, Benjamin; Brenner, Carsten; Klehr, A.; Knigge, Andrea; Tränkle, G.; Hofmann, Martin R.

doi:10.1109/cleoe-eqec.2017.8086397

Cited by 1 publication

(3 citation statements)

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“…Typical semiconductor lasers emit pulses in the range of picoseconds instead of femtoseconds because of the complicated carrier dynamics within the semiconductor material. In mode-locking, the laser emits pulses of light at a repetition rate given by the cavity roundtrip, with the pulse duration depending mainly on the number of modes that lock [4]. Modelocked semiconductor lasers capable of producing ultrashort pulses with picosecond durations have enormous impacts on many disciplines of science and technology.…”

Section: Introductionmentioning

confidence: 99%

“…Due to an error during production, an update to the citations was not made in this paper which has resulted in the citations for references [4][5][6][7][8][9] being misplaced. The second paragraph of the introduction should read as follows:…”

mentioning

confidence: 99%

“…'Typical semiconductor lasers emit pulses in the range of picoseconds instead of femtoseconds because of the complicated carrier dynamics within the semiconductor material [4]. In mode-locking, the laser emits pulses of light at a repetition rate given by the cavity roundtrip, with the pulse duration depending mainly on the number of modes that lock [5].…”

mentioning

confidence: 99%

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Numerical investigation of 1550 nm passively mode-locked diode lasers with different gain and absorber configurations

Aksakal¹,

Duman²,

Çakmak³

2020

Laser Phys.

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In this study, passively mode-locked semiconductor lasers with a central wavelength of 1550 nm are theoretically investigated, consisting of gain and absorption sections. Variation of carrier density with time and pulse profiles of the laser outputs are obtained. Comparative results are obtained for different lengths of the gain sections and absorber sections. In addition, the results are also examined while the absorption section is located between two gain sections and at the far end. It has been found that the devices with two gain sections have higher power and shorter pulse width when the absorber section is located between the two gain sections. Finally, ultrashort stable optical pulses with nearly 800 mW peak power and 1.57 ps duration have been obtained from mode-locked laser diodes with two gain sections and one absorber section located between.

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Section: Introductionmentioning

confidence: 99%

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confidence: 99%