Self-matched ESD cell in CMOS technology for 60-GHz broadband RF applications

Lin, Chun Yu; Chu, Li-Wei; Ker, Ming‐Dou; Lu, Tse-Hua; Hung, Ping-Fang; Li, Hsiao-Chun

doi:10.1109/rfic.2010.5477291

Cited by 13 publications

(3 citation statements)

References 5 publications

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“…The total width of diode D P (D N ) is 60 μm, and distributes at Port A, Port B and Port X as listed in Table 1. An nmos transistor M 0 with a size of W / L = 80 μm/0.18 μm is employed to emulate the core circuit to be protected as shown in Figure 2 [12]. An additional version of the test circuit implementing the conventional dual‐diode circuit was also fabricated.…”

Section: Test Chipmentioning

confidence: 99%

A compact broadband ESD protection circuit using multi‐layer helical inductor

Zou

Tang

Zhu

2021

Electronics Letters

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Here, a broadband electrostatic discharge (ESD) protection circuit using area-efficient multi-layer helical inductors is presented. The proposed concept was verified in a 0.18 μm 1P6M CMOS process, and the circuit area is only 54 × 63 μm 2 . The measurement results show that a bandwidth of around 30 GHz is achieved, and the impedance matching is kept under -20 dB up to 40 GHz. The measured TLP and VF-TLP currents reach 2.19 and 5.80 A, respectively, which indicates a good ESD robustness.

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Section: Test Chipmentioning

confidence: 99%

A compact broadband ESD protection circuit using multi‐layer helical inductor

Zou

Tang

Zhu

2021

Electronics Letters

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“…This result seems logical, since two 1 kV HBM protection devices are used in the final structure. Recently, a self-matched ESD cell library has been implemented for 60-GHz RF applications [8]. This ESD cell library has reached the 50-Ω input/output matching to reduce the design complexity for an RF circuit designer and to provide suitable ESD protection.…”

Section: Rf Broadband Measurementsmentioning

confidence: 99%

“…Its geometrical dimensions are 150 μm x 40 μm. Compared to [8], it can sustain about the same ESD target for some cells but its area is smaller and its operating frequency band is by far larger.…”

Section: Rf Broadband Measurementsmentioning

confidence: 99%

Geometrical impact on RF performances of broadband ESD self protected transmission line in advanced CMOS technologies

Lim

Jiménez

Benech

et al. 2012

2012 IEEE International Integrated Reliability Workshop Final Report

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Advanced CMOS technologies provide an easy way to realize radio-frequency integrated circuits (RFICs). However, transistor gates are getting smaller and electrostatic discharge (ESD) issues become more significant. Unfortunately, parasitic capacitance of the ESD protection limits the operating bandwidth of the RFICs. The size (i.e. die area) of ESD protection is also of concern in RFICs. This paper presents results of transmission line with ESD protection devices able to be implemented in an I/O pad in advanced CMOS technologies.

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