Self-interstitial shallow-donor complexes in silicon: An electron-paramagnetic-resonance study

Scheerer, O.; Juda, U.; Höhne, M.

doi:10.1103/physrevb.57.9657

Cited by 5 publications

(4 citation statements)

References 28 publications

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“…35 The effects of external strain due to P-self-interstitial complexes have been investigated in bulk samples and can reduce the valley-orbit splitting by 33%, resulting in a 15% reduction of the hyperfine splitting. 37 In summary, we have demonstrated a large quadratic shift of a single acceptor impurity due to the built-in potential of a Schottky barrier and a large ground state splitting that is consistent with a strain field resulting from a nearby selfinterstitial. Although the presence of the PtSi Schottky barrier enhances the likelihood of point defects in our experiment, this research shows that the local environment can have a strong influence on the energy spectrum of an acceptor.…”

Section: Discussionsupporting

confidence: 60%

Effect of local strain on single acceptors in Si

2007

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We explore the low temperature transport through a resonant acceptor impurity located near a metalsemiconductor interface and observe a large shift ͑12 meV͒ and splitting ͑0.8 meV͒ of its ground state. The shift is attributed to the quadratic Stark effect resulting from the electric field of the electrostatic barrier. The splitting is too large to be attributed to a linear Stark splitting. We calculate the strain field due to a nearby point defect and show that it can cause a large ground state splitting.

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Section: Discussionsupporting

confidence: 60%

Effect of local strain on single acceptors in Si

2007

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“…Recent studies of Au-ion-irradiated SiC at high temperature showed that the accumulation of disorder was considerably reduced with the rising temperature [25,58]. On the basis on RBS/C data, Jiang et al [25] attributed a part of the disorder to the substitution of Si atoms by Au ions by analogy with the doping of silicon with Au, Ag or Pt ions [59,60]. Such atomic substitution should have an influence on the vibrational spectrum of the material and therefore should be evidenced by Raman spectroscopy.…”

Section: Influence Of Irradiation Parameters: Temperature and Ion Spe...mentioning

confidence: 99%

Raman spectroscopy study of heavy-ion-irradiated α-SiC

Sorieul¹,

Costantini²,

Gosmain³

et al. 2006

J. Phys.: Condens. Matter

162

153

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Raman spectroscopy was used to investigate the structure of ion-irradiated α-SiC single crystals at room temperature and 400 °C. Irradiations induce a decrease of the Raman line intensities related to crystalline SiC, the appearance of several new Si–C vibration bands attributed to the breakdown of the Raman selection rules, and the formation of homonuclear bonds Si–Si and C–C within the SiC network. For low doses, the overall sp3 bond structure and the chemical order may be almost completely conserved. By contrast, the amorphous state shows a strong randomization of the Si–Si, Si–C and C–C bonds. The relative Raman intensity decreases exponentially versus increasing dose due to the absorption of the irradiated layer. The total disorder follows a sigmoidal curve, which is well fitted by the direct impact/defect stimulated model. The chemical disorder expressed as the ratio of C–C bonds to Si–C bonds increases exponentially versus the dose. A clear correlation is established between the total disorder and the chemical disorder. The increase of temperature allows the stabilization of a disordered/distorted state and a limitation of damage accumulation owing to the enhancement of the dynamic annealing.

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“…We will refer to such samples as 'quenched after annealing with an uncovered surface'. It is suggested that as a result of this treatment the supersaturation with self-interstitials has been removed [10,20]. Some of the complex defects to be discussed in this paper are not formed in these samples.…”

Section: Sample Preparationmentioning

confidence: 97%

“…The formation of certain complexes depends on the presence of additional defects which are assumed to be self-interstitials. In such samples various typical phenomena related to specific defects were detected [10,20]. Therefore, two types of sample were prepared and compared.…”

Section: Sample Preparationmentioning

confidence: 99%

Two-platinum-atom complex defects in silicon - an electron paramagnetic resonance study

Juda¹,

Höhne²

1999

J. Phys.: Condens. Matter

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Previously, two complex orthorhombic defects containing two platinum atoms were detected in silicon by means of electron paramagnetic resonance. In this paper other two-Pt-atom defects are investigated, an orthorhombic one and a monoclinic one. The spin Hamiltonians of these defects are given. Features of the monoclinic defect suggest a pair of Pt atoms positioned in a divacancy. Additional information about the structures of the different defects emerges from the conditions of sample preparation. Arguments are considered which suggest that the orthorhombic defect is a different charge state of one of the known two-Pt-atom defects. The monoclinic defect is formed only in samples which are assumed to be supersaturated with self-interstitials.

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Self-interstitial shallow-donor complexes in silicon: An electron-paramagnetic-resonance study

Cited by 5 publications

References 28 publications

Effect of local strain on single acceptors in Si

Effect of local strain on single acceptors in Si

Raman spectroscopy study of heavy-ion-irradiated α-SiC

Two-platinum-atom complex defects in silicon - an electron paramagnetic resonance study

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