Self-Interstitial Atoms and Structure of Intrinsic Getter in Silicon Crystals

Fedina, L. I.; Denisenko, S.G.; Aseev, A.L.

doi:10.4028/www.scientific.net/ssp.19-20.79

Cited by 4 publications

(24 citation statements)

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“…No {113}-defects are created in the p + part of the nanowire, in agreement with previous results obtained on bulk specimens by the Aseev group that are summarized in Fig. 2 [7,11,12].…”

Section: Samples For In Situsupporting

confidence: 91%

“…1, right and 3, left. e cm −2 s −1 ) irradiation temperature [7,11,12]. Dotted lines are drawn to guide the eye, full lines are fits using (8) and (9), for B and P at 200 and 300…”

Section: Samples For In Situmentioning

confidence: 99%

“…to transient enhanced diffusion of dopants. It was shown that heavy doping with B or P, the presence of interfaces and local stress fields as well as the irradiation temperature and the specimen thickness, have an influence on the {113}-defect formation kinetics and stability in thin Si foils [7][8][9][10][11][12][13]. In the mean time, the growth behavior of {113}-defects is also well understood [14].…”

Section: Introductionmentioning

confidence: 99%

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Impact of dopants and silicon structure dimensions on {113}‐defect formation during 2 MeV electron irradiation in an UHVEM

Vanhellemont

Anada

Nagase

et al. 2015

Phys. Status Solidi C

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When processing Si nanowire based Tunnel Field Effect Transistors (TFETS's), a significant reduction of B diffusion with decreasing nanowire diameter is observed and attributed to reduced transient enhanced diffusion close to the nanowire surface caused by the recombination and out‐diffusion of excess self‐interstitials. In this study, Ultra High Voltage Electron Microscopy (UHVEM) is used to study in situ the formation of self‐interstitial clusters in nanowire based TFET containing samples prepared by Focused Ion Beam (FIB) thinning. Si nanowires with diameters ranging from 40 to 500 nm are irradiated in an UHVEM using different fluxes of 2 MeV electrons at temperatures between room temperature and 375 °C. A strong dependence of defect formation on nanowire radius and on dopant concentration and type is observed. The UHVEM observations are compared with simulations based on quasi‐chemical reaction rate theory and with two dimensional dopant concentration distributions determined with high‐vacuum Scanning Spreading Resistance Microscopy (SSRM). (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…No {113}-defects are created in the p + part of the nanowire, in agreement with previous results obtained on bulk specimens by the Aseev group that are summarized in Fig. 2 [7,11,12].…”

Section: Samples For In Situsupporting

confidence: 91%

“…1, right and 3, left. e cm −2 s −1 ) irradiation temperature [7,11,12]. Dotted lines are drawn to guide the eye, full lines are fits using (8) and (9), for B and P at 200 and 300…”

Section: Samples For In Situmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Impact of dopants and silicon structure dimensions on {113}‐defect formation during 2 MeV electron irradiation in an UHVEM

Vanhellemont

Anada

Nagase

et al. 2015

Phys. Status Solidi C

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“…Although the experimental observations in the present work and also in our previous studies on {113}-defect formation in Si [15,19] are in excellent agreement with the experimental observations in the pioneering work of the Aseev group [8,9,12], the interpretation and modeling is quite different due to the progress which has been made in the mean time in understanding the Si intrinsic point defect properties. At the end of the 1980's, one assumed that during irradiation the diffusivity of the interstitial was larger than that of the vacancy and for that reason one needed to assume an important contribution of athermal interstitial diffusion to explain the experimental observations on {113}-defect formation.…”

Section: Vacancy and Interstitial Diffusivitysupporting

confidence: 87%

“…They transform into dislocation loops or stacking faults during subsequent anneals or dissolve at higher temperatures thus forming a source of self-interstitials leading, for example, to transient enhanced diffusion of dopants. Electrically active dopants, interfaces and local stress fields have an influence on the {113}-defect formation kinetics and stability [8][9][10][11][12][13][14][15]. The growth and Ostwald ripening of {113}-defects is meanwhile well understood [16].…”

mentioning

confidence: 99%

In situ UHVEM irradiation study of intrinsic point defect behavior in Si nanowire structures

Vanhellemont¹,

Anada²,

Nagase³

et al. 2015

Phys. Status Solidi C

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Si nanowire‐based Tunnel‐Field Effect Transistor (TFET) characteristics are intensively studied as function of nanowire diameter and doping. A significant reduction of B diffusion with decreasing nanowire diameter is e.g. observed and attributed to reduced transient enhanced diffusion close to the nanowire surface caused by the recombination and out‐diffusion of excess self‐interstitials. In an Ultra High Voltage Electron Microscope (UHVEM), the formation of self‐interstitial clusters can be studied in situ while varying e‐beam flux, irradiation temperature, impurity concentration and capping layers surrounding the nanowires.Results are presented on {113}‐defect formation in Si nanowires with diameters between 40 and 500 nm. The Si nanowires are embedded in SiO2 and are etched into an epitaxial Si stack on a heavily As doped Si substrate. The top layer of the epitaxial stack is in situ B doped or B implanted. In situ UHVEM studies are performed on focused ion beam prepared cross‐section samples, irradiating with different fluxes of 2 MeV electrons between room temperature and 375 °C. A strong dependence of {113}‐defect formation on nanowire radius and doping is observed. The observations are compared with simulations based on quasi‐chemical reaction rate theory. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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On the influence of extrinsic point defects on irradiation-induced point-defect distributions in silicon

Vanhellemont

Romano‐Rodríguez²

1994

Appl. Phys. A

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Abstract.A semi-quantitave model describing the influence of interfaces and stress fields on {ll3}-defect generation in silicon during 1-MeV electron irradiation, is further developed to take into account also the role of extrinsic point defects. It is shown that the observed distribution of { 113}-defects in high-flux electron-irradiated silicon and its dependence on irradiation temperature and dopant concentration can be understood by taking into account not only the influence of the surfaces and interfaces as sinks for intrinsic point defects but also the thermal stability of the bulk sinks for intrinsic point defects. In heavily doped silicon the bulk sinks are related with pairing reactions of the dopant atoms with the generated intrinsic point defects or related with enhanced recombination of vacancies and self-interstitials at extrinsic point defects. The obtained theoretical results are correlated with published experimental data on boronand phosphorus-doped silicon and are illustrated with observations obtained by irradiating cross-section transmission electron microscopy samples of wafers with highly doped surface layers. PACS: 61.80.Fe, 61.70.Bv, 61.70.Yq Irradiation of electronic devices with high energy particles leads to a degradation of the device characteristics which is partly due to the creation of lattice damage in the active areas of the devices. A convenient way of studying the basic mechanisms of the formation of radiation-induced displacement damage is irradiation with MeV electrons which is known to create individual intrinsic point defects rather than extensive collision cascades. Low flux electron irradiation leads to the formation of point defect complexes such as divacancies and dopant/intrinsic point defect pairs. High fluxes of MeV * Permanent address: LCMM, Departament de Fisica Aplicada i Electrbnica, Universitat de Barcelona, Diagonal 647, E-08028 Barcelona, Spain electrons create a supersaturation of self-interstitials which cluster in so-called {ll3}-defects which can be observed in situ during irradiation in a High-Voltage transmission Electron Microscope (HVEM). The distribution of {113}-defects in the irradiated sample can be used to monitor local variations of the intrinsic pointdefect concentration.Already in 1981, Brown and Fathy [1] observed a strong dependence of { 113}-defect generation on the type and the concentration of dopant atoms. Aseev and coworkers [2][3][4][5] have studied this phenomenon in more detail using silicon samples doped with different concentrations of boron or phosphorus atoms. Recently, experimental results were also obtained by the present authors by irradiating cross-section samples of wafers with a dopant concentration depth profile [6][7][8][9]. The impact of interfaces and localised mechanical stress fields on the {ll3}-defect distribution was discussed in a previous paper in which a first order model was presented to explain the generation of {ll3}-defects near TEM specimen surfaces and interfaces [10].Other extrinsic point defects which a...

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Self-Interstitial Atoms and Structure of Intrinsic Getter in Silicon Crystals

Cited by 4 publications

References 0 publications

Impact of dopants and silicon structure dimensions on {113}‐defect formation during 2 MeV electron irradiation in an UHVEM

Impact of dopants and silicon structure dimensions on {113}‐defect formation during 2 MeV electron irradiation in an UHVEM

In situ UHVEM irradiation study of intrinsic point defect behavior in Si nanowire structures

On the influence of extrinsic point defects on irradiation-induced point-defect distributions in silicon

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