Self‐Induced Nucleation Growth of GaN Columns by Chemical Vapor Deposition

Ramírez-González, Francisco; Garcı́a-Salgado, G.; Morales, C.; Díaz, T.; Rosendo, E.; Nieto-Caballero, F.G.; López, José Alberto Luna; Coyopol, A.; Romano, Renan Arnon; Galeazzi, R.; Martínez, Hugo M.

doi:10.1002/pssa.201700791

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2018

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“…The structures completely cover the substrate surface. Our research group has proposed self‐induced nucleation as the growth mechanism for these columns …”

Section: Resultsmentioning

confidence: 99%

Fabrication of GaN_(1−x)As_x, Zinc‐Blende, or Wurtzite GaN Depending on GaAs Nitridation Temperature in a CVD System

Ramírez-González

Garcı́a-Salgado

Morales

et al. 2018

Crystal Research and Technology

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The study of GaN morphology and structure modification due to the variation of the nitridation temperature are reported. GaN is obtained by nitridation of GaAs (1 1 1) using the flow of a mixture of hydrogen and ammonia into a horizontal CVD system. The experiments are carried out at atmospheric pressures of 800, 900, and 1000°C for 1 h. XRD results together with the pole figure indicate that GaN (1-x) As x is obtained at 800°C, that zinc-blende GaN structure is obtained at 900°C, and that wurtzite GaN structure is obtained at 900°C. The photoluminescence emission peak (obtained at room temperature) shifts to 420, 384, and 372 nm with the nitridation temperature change, in agreement with the XRD and pole figure results. SEM images show the morphology change, where GaN (1−x) As x and GaN layers are obtained at 800 and 900°C, respectively, while GaN columns are obtained at 1000°C. The morphology and structure change due the nitridation temperature variation are also discussed based on the results.

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“…The structures completely cover the substrate surface. Our research group has proposed self‐induced nucleation as the growth mechanism for these columns …”

Section: Resultsmentioning

confidence: 99%

Fabrication of GaN_(1−x)As_x, Zinc‐Blende, or Wurtzite GaN Depending on GaAs Nitridation Temperature in a CVD System

Ramírez-González

Garcı́a-Salgado

Morales

et al. 2018

Crystal Research and Technology

Self Cite

View full text Add to dashboard Cite

show abstract

Self‐Induced Nucleation Growth of GaN Columns by Chemical Vapor Deposition

Cited by 1 publication

References 21 publications

Fabrication of GaN_(1−x)As_x, Zinc‐Blende, or Wurtzite GaN Depending on GaAs Nitridation Temperature in a CVD System

Fabrication of GaN_(1−x)As_x, Zinc‐Blende, or Wurtzite GaN Depending on GaAs Nitridation Temperature in a CVD System

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Self‐Induced Nucleation Growth of GaN Columns by Chemical Vapor Deposition

Cited by 1 publication

References 21 publications

Fabrication of GaN(1−x)Asx, Zinc‐Blende, or Wurtzite GaN Depending on GaAs Nitridation Temperature in a CVD System

Fabrication of GaN(1−x)Asx, Zinc‐Blende, or Wurtzite GaN Depending on GaAs Nitridation Temperature in a CVD System

Contact Info

Product

Resources

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Fabrication of GaN_(1−x)As_x, Zinc‐Blende, or Wurtzite GaN Depending on GaAs Nitridation Temperature in a CVD System

Fabrication of GaN_(1−x)As_x, Zinc‐Blende, or Wurtzite GaN Depending on GaAs Nitridation Temperature in a CVD System