Fabrication of GaN_(1−x)As_x, Zinc‐Blende, or Wurtzite GaN Depending on GaAs Nitridation Temperature in a CVD System

Abstract

The study of GaN morphology and structure modification due to the variation of the nitridation temperature are reported. GaN is obtained by nitridation of GaAs (1 1 1) using the flow of a mixture of hydrogen and ammonia into a horizontal CVD system. The experiments are carried out at atmospheric pressures of 800, 900, and 1000°C for 1 h. XRD results together with the pole figure indicate that GaN (1-x) As x is obtained at 800°C, that zinc-blende GaN structure is obtained at 900°C, and that wurtzite GaN structure is obtained at 900°C. The photoluminescence emission peak (obtained at room temperature) shifts to 420, 384, and 372 nm with the nitridation temperature change, in agreement with the XRD and pole figure results. SEM images show the morphology change, where GaN (1−x) As x and GaN layers are obtained at 800 and 900°C, respectively, while GaN columns are obtained at 1000°C. The morphology and structure change due the nitridation temperature variation are also discussed based on the results.

The Gold Nanoparticles Enhanced ZnO/GaN UV Detector

“…The hydrophilic and hydrophobic properties of porous GaN epitaxial layer materials are discussed and explained using the Cassie-Baxter model. FS Ramí rez-Gonzá lez [13] reported that GaN films were prepared by a CVD system using GaAs (1 1 1) and ammonia as the reaction source and hydrogen as the carrier gas. In their report, the photoluminescence emission peaks changed from 420 nm to 384 nm and 372 nm as the temperature changed from 800 °C to 900 °C and 1000 °C.…”