Self-heating effects in silicon carbide MESFETs

Royet, A.S.; Ouisse, T.; Cabon, B.; Noblanc, O.; Arnodo, C.; Brylinski, C.

doi:10.1109/16.877187

Cited by 38 publications

(19 citation statements)

References 15 publications

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“…5 for ideal case [12], [14], Channel Length Modulation [15] and Self heating Effects [9]. The channel-length modulation effect provides a finite gate to drain resistance at saturation.…”

Section: Drain To Source Resistancementioning

confidence: 99%

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Analysis of resistances and transconductance of SiC MESFET considering fabrication parameters and mobility as a function of temperature

Islam

Akanda

Anwar

et al. 2010

International Conference on Electrical &Amp; Computer Engineering (ICECE 2010)

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In this paper, we have analyzed the resistances (specific on-resistance and drain to source resistance) and transconductance of SiC MESFET. Source diffusion, channel, drift region, epi-layer and substrate resistances those contribute to the specific on-resistance have been analyzed. Effect of change in the junction depth due to post annealing on the implant range parameter is also considered. Half of change in the junction depth is added to the implant range parameter (before annealing). Straggle parameter is changed by diffusion coefficient and annealing time. Temperature dependency of mobility is also considered in all parameters. The variation of transconductance taking the drain to source voltage as a parameter has also been analyzed. Our analysis provides in-depth knowledge about the operation and characteristics of the high-power SiC MESFETs.

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“…5 for ideal case [12], [14], Channel Length Modulation [15] and Self heating Effects [9]. The channel-length modulation effect provides a finite gate to drain resistance at saturation.…”

Section: Drain To Source Resistancementioning

confidence: 99%

“…In doing so we have actually taken the effect of impurity diffusion due to annealing [8] into account. We have also added the effect of reduction in mobility due to higher lattice temperature arising from self heating effect [9], [10].…”

Section: Introductionmentioning

confidence: 99%

Analysis of resistances and transconductance of SiC MESFET considering fabrication parameters and mobility as a function of temperature

Islam

Akanda

Anwar

et al. 2010

International Conference on Electrical &Amp; Computer Engineering (ICECE 2010)

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“…The reported values are slightly lower than those for 6H-SiC, but the same strong decrease of the thermal conductivity with increasing temperature and doping concentration can be observed. The conductivity of semi-insulating (SI) substrates lies between high and low doping values, probably due to the high degree of compensation from vanadium impurities (in the 10 17 -10 18 cm −3 range) [30] that is necessary to ensure SI properties to SiC substrates. The thermal conductivity of 4H-SiC is also experimentally determined to be about 20% lower for heat conduction along the c-axis with respect to the perpendicular plane.…”

Section: B 6h-sic and 4h-sic Thermal Conductivity Modelsmentioning

confidence: 99%

On the Substrate Thermal Optimization in SiC-Based Backside-Mounted High-Power GaN FETs

Cappelluti

Furno

Angelini

et al. 2007

IEEE Trans. Electron Devices

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This paper presents a discussion on the substrate thermal design of backside-mounted power GaN high-electron mobility transistors. After a review on the thermal properties of the relevant materials and their temperature dependences, design guidelines are proposed on the basis of 3-D thermal simulations; the results presented suggest that in SiC-based devices, substrate thinning does not typically improve the thermal resistance or the dynamic thermal behavior. Contrary to what happens in III-V GaAs-or InP-based discrete or integrated devices, therefore, microstrip design on a thinned substrate (as opposed to coplanar design on a comparatively thick substrate) is generally not thermally superior. This should make possible, from the thermal standpoint, the realization of coplanar multifunctional GaN-based monolithic microwave integrated circuits integrating, e.g., low-noise and power stages and avoiding the use of via holes. Index Terms-GaN, power modulation-doped field-effect transistors (MODFET), semiconductor device thermal factors, SiC.

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“…Due to high power applications and high switching speeds, SiC/GaN MESFETs suffer from self-heating effects because of the variation in the channel conditions [5], [6]. As the drain current (I DS ) increases, the temperature in the channel also increases and this in turn decreases mobility of carriers [7].…”

Section: Introductionmentioning

confidence: 99%

Temperature Dependent Analytical DC Model for Wide Bandgap MESFETs

2019

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In this paper, an analytical model has been developed to predict DC characteristics of wide bandgap metal semiconductor field effect transistors (MESFETs). The model evaluates potential distribution inside the channel of the device by dividing the Schottky barrier depletion layer into four distinct regions and predicts I − V characteristics both at the room as well as at elevated temperatures. It also considers selfheating effects caused by the high-drain current and predicts negative output conductance, usually exhibited by wide bandgap MESFETs. The validity of the proposed technique is ensured by applying it on GaN and SiC MESFETs. It has been shown that the developed technique offers ∼ 50% and ∼ 37% improved accuracy in predicting the output characteristics of the device at T = 300 K and T = 500 K, respectively, relative to the best reported model. Thus, the proposed technique can be employed in the device modeling software involving high-power MESFETs.INDEX TERMS MESFETs, analytical model, I − V characteristics, self-heating effects.

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Self-heating effects in silicon carbide MESFETs

Cited by 38 publications

References 15 publications

Analysis of resistances and transconductance of SiC MESFET considering fabrication parameters and mobility as a function of temperature

Analysis of resistances and transconductance of SiC MESFET considering fabrication parameters and mobility as a function of temperature

On the Substrate Thermal Optimization in SiC-Based Backside-Mounted High-Power GaN FETs

Temperature Dependent Analytical DC Model for Wide Bandgap MESFETs

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