The recent demonstration of MoSi2N4 and its exceptional stability to air, water, acid, and heat has generated intense interest in this family of two-dimensional materials. Among these materials, monolayers of NbSi2N4, VSi2N4, and VSi2P4 are semiconducting, easy-plane ferromagnets with negligible in-plane magnetic anisotropy. They, thus, satisfy a necessary condition for exhibiting a dissipationless spin superfluid mode. The Curie temperatures of monolayer VSi2P4 and VSi2N4 are determined to be above room temperature based on Monte Carlo and density functional theory calculations. The magnetic moments of VSi2N4 can be switched from in-plane to out-of-plane by applying tensile biaxial strain or electron doping.

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In this paper, we have analyzed the resistances (specific on-resistance and drain to source resistance) and transconductance of SiC MESFET. Source diffusion, channel, drift region, epi-layer and substrate resistances those contribute to the specific on-resistance have been analyzed. Effect of change in the junction depth due to post annealing on the implant range parameter is also considered. Half of change in the junction depth is added to the implant range parameter (before annealing). Straggle parameter is changed by diffusion coefficient and annealing time. Temperature dependency of mobility is also considered in all parameters. The variation of transconductance taking the drain to source voltage as a parameter has also been analyzed. Our analysis provides in-depth knowledge about the operation and characteristics of the high-power SiC MESFETs.