Self-forming silicide/SiGe-based tube structure on Si(001) substrates

Chen, H.C.; Liao, K.F.; Lee, S.W.; Chen, L.J.

doi:10.1016/j.tsf.2004.06.167

Cited by 3 publications

(2 citation statements)

References 11 publications

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“…The variety of shapes, high precision of formation of SiGe/Si shells, and compatibility of methods of their formation with the planar technology of fabricating silicon MEMS and IC offer prospects for the use of such shells in microelectromechanics and electronics. Activities aimed at formation, investigation, and application of three-dimensional micro-and nanostructures based on strained (SiGe/Si) and hybrid shells are currently underway in Russia, Germany, Switzerland, Taiwan, Japan, and USA [15][16][17][18][33][34][35][36][37][38][39][40]. Free-standing tubes protruding outside the substrate edge and bent and trough-shaped beams are used to create prototypes of cantilevers for atomic-force microscopes, as well as nanoprobes and micro-and nanoneedles for intracellular injections, and nanoinjectors for ink-jet printers [41][42][43].…”

Section: Discussionmentioning

confidence: 99%

Elastic silicon-film-based nanoshells: Formation, properties, and applications

Prinz

Golod

2006

J Appl Mech Tech Phys

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Controllable formation and properties of solid single-crystal micro-and nanoshells of various shapes (tubes and spirals, vertically positioned rings and cylinders, and bent and trough-shaped cantilevers) are briefly reviewed, and new results are given. The shells and complicated structures of prescribed size and shape are formed with the use of elastic energy of initial strained SiGe/Si films of nanometer thickness and methods of highly selective and directed detachment of the films from the silicon substrates. It is experimentally demonstrated that the diameters of the fabricated SiGe/Si nanotubes are several times smaller than the values predicted by the continuum elasticity theory. The properties of the shells made of semiconductor and hybrid (metal-semiconductor and metal-dielectricsemiconductor) films and their applications in micro-and nanoscale electrical engineering are discussed.

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Section: Discussionmentioning

confidence: 99%

Elastic silicon-film-based nanoshells: Formation, properties, and applications

Prinz

Golod

2006

J Appl Mech Tech Phys

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“…6,7 Recently, many studies have reported a variety of novel nanostructures based on Ge/Si heteroepitaxy, including NiSi 2 /SiGe nanotubes, Si/Ge superlattice quantum dots, and Si/Ge superlattice nanowires. [8][9][10] These unconventional nanostructures are expected to exhibit the potential for the realization of advanced device applications, such as Si-based photodetectors or thermoelectrics. In the previous study, Chen et al demonstrated the fabrication of self-aligned Ge nanolens stacks by selectively etching the Ge dot/Si multilayers.…”

mentioning

confidence: 99%

Strain Relaxation during Formation of Ge Nanolens Stacks

Chang

Chen

Hsu

et al. 2010

Electrochem. Solid-State Lett.

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Self-aligned stacked Ge nanolenses were fabricated by selective chemical wet etching of Ge dot/Si multilayers. After removal of Si spacers, Ge nanodots become more lenticular. Based on the results of Raman spectroscopy, this shape change is attributed to the strain relief of Ge nanodots. The geometrical modulation could also be greatly beneficial to the vertical self-alignment of Ge nanolenses during the etching process. In addition, the improved full width at half-maximum value of the photoluminescence emission can be attributed to the reduction in size and composition fluctuations within the stacked Ge nanolenses.

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Precise, molecularly thin semiconductor shells: from nanotubes to nanocorrugated quantum systems

Prinz

2006

Physica Status Solidi (b)

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This brief overview focuses on the fabrication methods and properties of semiconductor and metal nanoshells based on self-rolling or buckling of strained ultrathin films. Previously, it was shown that thin epitaxial heterofilms (down to two monolayers for InGaAs/GaAs) can be controllably released from the substrates and converted into micro-and nanoshells, including tubes and corrugations. The diameter of the tubes obtained was down to 2 nm, and the period of the nanocorrugated systems was down to 10 nm. New results for quantum confinement in semiconductor and hybrid nanoshells and for fabrication of complex nanoshells are reported. Possible extension of this approach to the case of carbon shells is discussed.

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Self-forming silicide/SiGe-based tube structure on Si(001) substrates

Cited by 3 publications

References 11 publications

Elastic silicon-film-based nanoshells: Formation, properties, and applications

Elastic silicon-film-based nanoshells: Formation, properties, and applications

Strain Relaxation during Formation of Ge Nanolens Stacks

Precise, molecularly thin semiconductor shells: from nanotubes to nanocorrugated quantum systems

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