Self-Diffusion in Germanium

Abstract

An accurate determination of the self-diffusion coefficient in germanium has been obtained. In the temperature range 766-928°C, it is represented by Z>=7.8 exp( -68 500/RT) cm 2 sec. The probable errors in the frequency factor and activation energy are ±3.4 cm 2 /sec and ±0.96 kcal/mol, respectively.

Vapour‐Pressure Investigations of Impurity Diffusion and Solubility in AII–BVI Compounds Demonstrated for the System CdS:Au:S2

“…Up to now this rule was used only in few cases (e.g. [19]) but a general test made by us (with many Do values obtained by other authors on other systems) supplies the result that this criterion is useful, if no pre-doped crystals were used. Because the Au diffusion coefficient increases with increasing sulphur pressure (Section 4.3) and therefore increasing Cd vacancy concentration the corresponding sublattice is the Cd sublattice.…”

Molecular dynamics simulation of intrinsic point defects in germanium

“…The values for the formation energy of the vacancy obtained from quenching experiments range between 1.9 and 2.0 eV [38][39][40][41][42][43]. Combining the data from these experiments with the data from self-diffusion experiments [35][36][37] leads to a vacancy migration barrier estimation of about 1.1 eV.…”

Diffusion ofn-type dopants in germanium

“…First studies were performed more than 50 years ago. 50,51 The impact of doping and hydrostatic pressure on self-diffusion provided evidence on the acceptor nature of V in Ge. 22 The excellent agreement between Ge self-diffusion and the V contribution to selfdiffusion deduced from copper diffusion in dislocation-free Ge proved the dominance of V in Ge.…”