Self-consistent simulation of corrugated layered structures

Kerkhoven, Thomas; Raschke, M.

doi:10.1016/0749-6036(92)90309-s

Cited by 4 publications

(2 citation statements)

References 6 publications

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“…(i) Transient solutions of quantum kinetic equations usually require a thermal equilibrium Wigner function as initial data. To obtain the thermal equilibrium solution either via the eigenvalue problem for the Schrödinger equation [10] or via the Bloch equation [12] is an expensive computational task. (ii) Approximations to the thermal equilibrium distribution function can be used to derive quantum mechanical corrections for macroscopic fluid dynamical equations.…”

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confidence: 99%

Approximation of Thermal Equilibrium for Quantum Gases with Discontinuous Potentials and Application to Semiconductor Devices

Gardner¹,

Ringhofer²

1998

SIAM J. Appl. Math.

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We derive an approximate solution valid to all orders ofh to the Bloch equation for quantum mechanical thermal equilibrium distribution functions via asymptotic analysis for high temperatures and small external potentials. This approximation can be used as initial data for transient solutions of the quantum Liouville equation, to derive quantum mechanical correction terms to the classical hydrodynamic model, or to construct an effective partition function in statistical mechanics. The validity of the asymptotic solution is investigated analytically and numerically and compared with Wigner's O(h 2 ) solution. Since the asymptotic analysis results in replacing second derivatives of the potential in the correction to the stress tensor in the original O(h 2 ) quantum hydrodynamic model by second derivatives of a smoothed potential, this approach represents a definite improvement for the technologically important case of piecewise continuous potentials in quantum semiconductor devices.

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confidence: 99%

Approximation of Thermal Equilibrium for Quantum Gases with Discontinuous Potentials and Application to Semiconductor Devices

Gardner¹,

Ringhofer²

1998

SIAM J. Appl. Math.

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“…47 3.21 Secg6es transversais do potencial ao longo da dire<;ao y, com cortes em x = 0 A e x = 400 A, para uma temperatura 0 K e ND = 0.5 X 10 18 cm- 3 . 47 3.22 Curvas de niveis das densidades de probabilidades dos quatro primeiros estados da heteroestrutura corrugada, com T = 0, eND = 0.075 X 10 18 cm- 3 . 50…”

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Estudo dos estados eletrônicos em sistemas quase-unidimensionais.

Leão¹

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4.5 Perfil do potencial da heteroestrutura de Ah_:z;Ga:z;AsjGaAs, em urn corte transversal paralelo a direQao de crescimento da amostra. (a) Aqui mostramos a heteroestrutura com a estrutura de gate, e em (b) mostramos 0 perfil do potencial em uma regiao sob 0 gate e em urna sem 0 gate. 63 4.6 Visao do topo do dispositivo utilizado por Okada et al [4] para investigar a transiQao de urn gas de eletrons quase-2D para urn quase-1D.. .. .. .. 65 4.7 SeQao transversal do dispositivo investigado por Okada et al.. .. .. . .. 65 4.8 Thancondutancia versus voltagem aplicada ao gate. Resultado experimental obtido por Okada et al.

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