High-frequency (HF) low-temperature plasma is widely used for surface cleaning, plasma-chemical sedimentation, and etching of thin layers of various materials in semiconductor and integrated circuit production. In the present day HF plasma is also used for polishing and modification of construction materials, purification of nanopowder surfaces, modification of leather, fur and fabric, pre-sowing seed treatment, and sterilization of medical tools, equipment and materials. A commonly used in practical applications HF device consists of a generator, an energy transmission line, an impedance matching device, and a plasma capacitor as an electric load. In this article, a method of calculation of an equivalent electrical circuit for a plasma capacitor in HF ion-plasma technologies has been developed. An example calculation of a capacitor with electrodes, consisting of earthed cylinder and two electrically connected disk-shaped plates put into it, is demonstrated. The calculation was used for the development of a plasma-chemical installation, which is intended for deposition of silicon-based decorative coatings on glass, earthenware and porcelain products. The developed method of calculation can be employed for designing HF plasma reactors, which are used in industry and experimental research in gas discharge physics.