Self-consistent 2D Compact Model for Nanoscale Double Gate MOSFETs

Abstract

Abstract. 2D modeling results of the electrostatics and the drain current in nanoscale DG MOSFETs are presented. The modeling of the 2D capacitive coupling within the device is based on the conformal mapping technique. In moderate above-threshold conditions, we obtain self-consistent results, which are in excellent agreement with numerical simulations.

Physics based capacitance modeling of short‐channel double‐gate MOSFETs

“…(1) is carried out to map the trial function to the four-corner (u, iv) plane. The corner contributions to the total potential distribution are obtained analytically by inserting the mapped n th order function into the general expression of the Laplace equation in the (u,iv)-plane [3,6]. Figure 4 shows the obtained potential distribution for n = 6 in Eq.…”

“…In the transformed plane Laplace's equation can be solved analytically leading to an expression of the potential distribution ϕ L (u,v) throughout the body [3,6]. According to Gauss' law, the total charge that can be assigned to an electrode is proportional with the integrated perpendicular electric field terminating on that electrode.…”

“…This ensures equipotential surfaces on all the device contacts. 2 Capacitance modeling in sub-threshold The capacitive coupling between the electrodes of the device is given by Laplace's equation, which can be solved by the technique of conformal mapping [3]. The four corner device body described in the complex (x,iy)-plane is mapped into the upper half of a complex (u,iv)-plane, and the boundary of the body, i.e.…”

“…A framework model of the drift-diffusion current modeling has been presented for the DG device [1][2][3][4][5][6][7]. Based on this framework we can calculate the capacitances in all operating regions, from sub-threshold to strong inversion.…”

Compact current modeling of short‐channel multiple gate MOSFETs

“…A precise, approximate solution for the GAA device can also be obtained based on the DG results [8,9]. In moderate to strong inversion, Poisson's equation is taken into consideration to assure selfconsistency between the induced charge and the interelectrode contact fields [9][10][11]. Well into strong inversion, a long channel model is adopted [12,13].…”