Modeling, verification and comparison of short-channel double gate and gate-all-around MOSFETs

Kolberg, Sigbjørn; Børli, H.; Fjeldly, Tor A.

doi:10.1016/j.matcom.2007.09.011

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Cited by 11 publications

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“…1 pp. 43-53 44 Kolberg et al 2008;Srivastava et al 2011(c)). However, the undoped body can enhance the carrier mobility owing to the absence of depletion charges which can significantly contributes to the effective electric field, thus degrading the mobility (Cerdeira et al 2008;Reyboz et al 2009;Tamer and Roy 2007).…”

Section: Introductionmentioning

confidence: 99%

Testing of Cylindrical Surrounding Double-Gate MOSFET Parameters Using Image Acquisition

Srivastava¹,

Singh²

2013

JSPTA

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In this paper, we have analyzed the image acquisition of the Cylindrical Surrounding Double-Gate (CSDG) MOSFETs for the purpose of RF switch for the advanced wireless telecommunication systems. The proposed model will emphasize on the basics structure of the single image sensor for two dimensional images of a three dimension devices, so that we can obtained a satisfied or say smooth device structure and hence some of its parameter. The physical significance of these basic structure elements are also has been discussed.

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