Self-compensation in Mg doped p-type GaN grown by MOCVD

Obloh, H.; Bachem, K. H.; Kaufmann, U.; Kunzer, M.; Maier, M.; Ramakrishnan, A.; Schlotter, P.

doi:10.1016/s0022-0248(98)00578-8

Cited by 123 publications

(79 citation statements)

References 5 publications

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“…It should be mentioned that the four-point probe measurement values are higher than the Hall-effect measurement values due to the small sizes of the specimens. A remarkable observation is that the conductivity is about an order of magnitude higher than the other doped GaN layers grown by either MOCVD or MBE [9,[19][20][21]. The relatively low mobility value is probably due to a low crystalline quality resulted from the employed low substrate temperatures in MBE as was also observed in other MBE grown layers [20].…”

Section: Resultsmentioning

confidence: 76%

A comparative study on Be and Mg doping in GaN films grown using a single GaN precursor via molecular beam epitaxy

Gao¹,

Yu²,

Choi³

et al. 2006

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 76%

A comparative study on Be and Mg doping in GaN films grown using a single GaN precursor via molecular beam epitaxy

Gao¹,

Yu²,

Choi³

et al. 2006

Journal of Crystal Growth

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“…The initial decrease and subsequent increase in resistance with decreasing d is consistent with increasing Mg concentration since above an optimal doping level Mg self-compensation occurs. 18,19 Second, current (I) versus source-drain voltage (V sd ) and gate voltage (V g ) were recorded to determine the sign of the carriers produced by the Mg dopant. The data exhibit a conductance increase (decrease) for V g less (greater) than zero ( Figure 2B) and thus demonstrate that the Mg-doped GaN NWs are p-type.…”

mentioning

confidence: 99%

Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices

et al. 2003

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Magnesium-doped gallium nitride nanowires have been synthesized via metal-catalyzed chemical vapor deposition. Nanowires prepared on c-plane sapphire substrates were found to grow normal to the substrate, and transmission electron microscopy studies demonstrated that the nanowires had single-crystal structures with a 〈0001〉 growth axis that is consistent with substrate epitaxy. Individual magnesium-doped gallium nitride nanowires configured as field-effect transistors exhibited systematic variations in two-terminal resistance as a function of magnesium dopant incorporation, and gate-dependent conductance measurements demonstrated that optimally doped nanowires were p-type with hole mobilities of ca. 12 cm 2 /V‚s. In addition, transport studies of crossed gallium nitride nanowire structures assembled from p-and n-type materials show that these junctions correspond to well-defined p−n diodes. In forward bias, the p−n crossed nanowire junctions also function as nanoscale UV-blue light emitting diodes. The new synthesis of p-type gallium nitride nanowire building blocks opens up significant potential for the assembly of nanoscale electronics and photonics.Semiconductor nanowires (NWs) have demonstrated significant potential as fundamental building blocks for nanoelectronic and nanophotonic devices and also offer substantial promise for integrated nanosystems. 1,2 A key feature of semiconductor NWs that has enabled much of their success has been the growth of materials with reproducible electronic properties, including the controlled incorporation of n-type and/or p-type dopants. [3][4][5] The ability to incorporate both pand n-type dopants in a single material system, called complementary doping, has been previously demonstrated in silicon (Si) 3,4 and indium phosphide (InP) 5 NWs and has opened up substantial opportunities for exploring nanodevice concepts. For example, p-type and n-type Si NWs have been used to assemble p-n diodes, bipolar transistors, and complementary inverters, 3,4 while p-and n-type InP NWs have been used to create p-n diodes that function as nanoscale near-infrared light-emitting diodes (LEDs). 5 Complementary doping has not been reported in other semiconductor NW materials, although these previous results for Si and InP NWs underscore how the availability of pand n-type materials can enable a wide-range of function. For example, there has been considerable interest in GaN NWs 6-8 since this wide band gap material has been used in conventional planar structures to fabricate UV-blue LEDs and lasers, 9 as well as a range of other high-performance electronic devices. 10 Studies of the electronic properties of GaN NWs show, however, that unintentionally doped materials are intrinsically n-type, 11,12 and thus alone preclude exploration of a wide-range of nanodevices based upon complementary materials. To overcome this limitation of available GaN NWs, we have previously used p-Si NWs and n-GaN NWs to assemble hetero p-n junctions and nano-LEDs, 11,13 although a limitation of using p-Si N...

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“…[22] The lower energy peak at 430 nm in the CL spectrum is a characteristic peak of p-GaN and has been attributed to the transitions from the conduction band or shallow donors to the Mg acceptor levels (donor-acceptor). [23] The same figure shows the CL spectra corresponding to the emission of the segment of the heterojunctions grown over the ion exposed region (orange curve, Area 2). Compared to Area 1, we observe a loss in the intensity of the ZnO 372 nm peak within the ion exposed region.…”

Section: Resultsmentioning

confidence: 99%

Surface‐Directed Growth: Surface‐Directed Nanoepitaxy on a Surface with an Irregular Lattice (Adv. Mater. Interfaces 5/2016)

Garratt

Nikoobakht

2016

Adv Materials Inter

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Understanding and developing metrics on how nanocrystals respond to local external surface stimuli at their interfaces during growth or operation is a key step in advancing scalable and deterministic approaches for fabricating functional one- and two-dimensional (1D and 2D) nanoscale networks. Here, we present early results on a general approach for surface-directed nanocrystal epitaxy on a surface with an irregular lattice constant. We show that patches of lattice matched areas as small as 7 nm in a background of surface lattice disorder could satisfy the condition for epitaxial growth of a crawling nanocrystal over the disordered region. Threshold of failure in nanocrystal epitaxy is found to depend on the spacing between the patches and their total surface area. Results indicate nanoepitaxy on a disordered surface occurs if it contains patches of lattice matched regions with at least 20% of surface coverage, illustrating the remarkable tolerance of this type of growth to surface lattice disorder. By adjusting this threshold, it is possible to scalably restrict nanocrystal growth, filter out single nanowires and partition nanowire heterojunctions into segments with different orientations or modulate their electronic structures. This approach is expected to impact epitaxy of highly-mismatched semiconductors and lead to realization of ultrathin heterojunctions of 1D-2D materials.

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Self-compensation in Mg doped p-type GaN grown by MOCVD

Cited by 123 publications

References 5 publications

A comparative study on Be and Mg doping in GaN films grown using a single GaN precursor via molecular beam epitaxy

A comparative study on Be and Mg doping in GaN films grown using a single GaN precursor via molecular beam epitaxy

Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices

Surface‐Directed Growth: Surface‐Directed Nanoepitaxy on a Surface with an Irregular Lattice (Adv. Mater. Interfaces 5/2016)

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