A comparative study on Be and Mg doping in GaN films grown using a single GaN precursor via molecular beam epitaxy

Gao, Cunxu; Yu, Fucheng; Choi, A-Ram; Kim, D.J.; Kim, C.G.; Kim, C.S.; Kim, H.J.; Ihm, Young Eon

doi:10.1016/j.jcrysgro.2006.03.007

Cited by 8 publications

(3 citation statements)

References 25 publications

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“…Thus, the optimum ratio of Al:Mg:Ga is 4:3:9 in the 2 × 2 × 2-GaN supercell. GaN codoped with Mg and other co-dopants has been studied experimentally and theoretically, [27,29,30] and the ratio of Al:Ga in experiment reached 7:3, [31] therefore, the above result is consistent with the experimental result. The final energy is expressed by the Mermin finite temperature in CASTEP as…”

Section: Gan Co-doped With Mg and Alsupporting

confidence: 76%

Electronic structure and optical properties of Al and Mg co-doped GaN

Ji¹,

Du²,

Wang³

2013

Chinese Phys. B

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The electronic structure and optical properties of Al and Mg co-doped GaN are calculated from first principles using density function theory with the plane-wave ultrasoft pseudopotential method. The results show that the optimal form of p-type GaN is obtained with an appropriate Al:Mg co-doping ratio rather than with only Mg doping. Al doping weakens the interaction between Ga and N, resulting in the Ga 4s states moving to a high energy region and the system band gap widening. The optical properties of the co-doped system are calculated and compared with those of undoped GaN. The dielectric function of the co-doped system is anisotropic in the low energy region. The static refractive index and reflectivity increase, and absorption coefficient decreases. This provides the theoretical foundation for the design and application of Al-Mg co-doped GaN photoelectric materials.

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Section: Gan Co-doped With Mg and Alsupporting

confidence: 76%

Electronic structure and optical properties of Al and Mg co-doped GaN

Ji¹,

Du²,

Wang³

2013

Chinese Phys. B

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“…In order to check the crystallinity of the materials, X-ray diffraction (XRD) measurements were performed on the films using a Phillips PW1820 diffractometer. The XRD patterns for the GaN and AlN films are displayed in Fig 1, with the peak assignments guided by the results in the literature for the corresponding materials; GaN [22][23][24] and AlN [25,26] and an additional peak corresponding to the α-Al 2 O 3 substrate was observed. The samples were mounted in an implantation chamber and held with the c-axis (0001) at 30 o to the beam direction during implantation.…”

Section: Methodsmentioning

confidence: 81%

Lattice sites, charge states and spin–lattice relaxation of Fe ions in 57 Mn + implanted GaN and AlN

Masenda

Naidoo

Bharuth-Ram

et al. 2016

Journal of Magnetism and Magnetic Materials

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The lattice sites, valence states, resulting magnetic behaviour and spin-lattice relaxation of Fe ions in GaN and AlN were investigated by emission Mössbauer spectroscopy following the implantation of radioactive 57 Mn + ions at ISOLDE/CERN. Angle dependent measurements performed at room temperature on the 14.4 keV γ-rays from the 57 Fe Mössbauer state (populated from the 57 Mn β − decay) reveal that the majority of the Fe ions are in the 2+ valence state nearly substituting the Ga and Al cations, and/or associated with vacancy type defects. Emission Mössbauer spectroscopy experiments conducted over a temperature range of 100-800 K show the presence of magnetically-split sextets in the "wings" of the spectra for both materials. The temperature dependence of the sextets relate these spectral features to paramagnetic Fe 3+ with rather slow spin-lattice relaxation rates which

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“…A lattice shrinkage occurs in the sample with Be doping due to the smaller ionic radius of Be as compared to Ga; conversely, a lattice expansion takes place in the case of Mg codoping. 22) The expansion or shrinkage of the lattice might reduce the space volume at the interstitial sites. In the meantime, the codoping of Mg and Be can compensate the ionic size effect in the lattice so that the interstitial sites with increased space volume can introduce more Mn atoms and lead to more MnAs and MnGa precipitations.…”

Section: Resultsmentioning

confidence: 99%

The Effects of Codoping of Be and Mg on Incorporation of Mn in GaAs

Yu¹,

Gao²,

Parchinskiy³

et al. 2008

Korean. J. Mater. Res.

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Samples of GaMnAs, GaMnAs codoped with Be, and GaMnAs simultaneously codoped with Be and Mg were grown via low-temperature molecular beam epitaxy (LT-MBE). Be codoping is shown to take the Ga sites into the lattice efficiently and to increase the conductivity of GaMnAs. Additionally, it shifts the semiconducting behavior of GaMnAs to metallic while the Mn concentration in the GaMnAs solid solution is reduced. However, with simultaneous codoping of GaMnAs with Be and Mg, the Mn concentration increases dramatically several times over that in a GaMnAs sample alone. Mg and Be are shown to eject Mn from the Ga sites to form MnAs and MnGa precipitates.

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A comparative study on Be and Mg doping in GaN films grown using a single GaN precursor via molecular beam epitaxy

Cited by 8 publications

References 25 publications

Electronic structure and optical properties of Al and Mg co-doped GaN

Electronic structure and optical properties of Al and Mg co-doped GaN

Lattice sites, charge states and spin–lattice relaxation of Fe ions in 57 Mn + implanted GaN and AlN

The Effects of Codoping of Be and Mg on Incorporation of Mn in GaAs

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