Self-assembled multiferroic epitaxial BiFeO3–CoFe2O4 nanocomposite thin films grown by RF magnetron sputtering

Kim, Tae Cheol; Ojha, Shuchi; Tian, Guo; Lee, Seung-Han; Jung, Heon; Choi, Jun Woo; Kornblum, Lior; Walker, Frederick J.; Ahn, Charles; Ross, Caroline A.; Kim, Dong Hun

doi:10.1039/c8tc01192c

Cited by 37 publications

(14 citation statements)

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“…This may be the result of strain, as the in‐plane lattice constant of STO grown on Si differs from bulk crystals, or imperfect stoichiometry (see discussion in Section ). We also note that BFO‐CFO composites have also been grown by sputtering and ALD, which further facilitates possible integration routes towards applications.…”

Section: Materials and Functional Propertiesmentioning

confidence: 96%

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices

Kumah

Ngai

Kornblum

2019

Adv Funct Materials

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Functional oxides are an untapped resource for futuristic devices and functionalities. These functionalities can range from high temperature superconductivity to multiferroicity and novel catalytic schemes. The most prominent route for transforming these ideas from a single device in the lab to practical technologies is by integration with semiconductors. Moreover, coupling oxides with semiconductors can herald new and unexpected functionalities that exist in neither of the individual materials. Therefore, oxide epitaxy on semiconductors provides a materials platform for novel device technologies. As oxides and semiconductors exhibit properties that are complementary to one another, epitaxial heterostructures comprised of the two are uniquely poised to deliver rich functionalities. This review discusses recent advancements in the growth of epitaxial oxides on semiconductors, and the electronic and physical structure of their interfaces. Leaning on these fundamentals and practicalities, the material behavior and functionality of semiconductor-oxide heterostructures is discussed, and their potential as device building blocks is highlighted. The culmination of this discussion is a review of recent advances in the development of prototype devices based on semiconductor-oxide heterostructures, in areas ranging from silicon photonics to photocatalysis. This overview is intended to stimulate ideas for new concepts of functional devices and lay the groundwork for their realization.

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Section: Materials and Functional Propertiesmentioning

confidence: 96%

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices

Kumah

Ngai

Kornblum

2019

Adv Funct Materials

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“…Increased interfacial surface area for the ME VANs and a weaker substrateclamping effect lead to an enhanced strain-mediated ME effect. 17,21 However, because the magnetostrictive nanopillars that penetrate the piezoelectric matrix usually have a much lower resistivity, leakage problems have been reported. 22 To overcome this limitation, a buried ME VAN structure has been proposed, as shown in Figure 1b, where ME VANs are sandwiched between two additional thin piezoelectric layers.…”

Section: History and Backgroundmentioning

confidence: 99%

“…For potential large-scale fabrication requirements, sputtering has also been studied. 5,21,39,40 In the following sections, we will focus on (1) the phase distribution in ME VANs; (2) diverse approaches to adjust the morphology and ME performances; and (3) the potential in various microelectronic applications.…”

Section: History and Backgroundmentioning

confidence: 99%

“…To improve the control of the phase distribution in ME VANs, lithography and seeding techniques have been explored to generate templates and to assist in the growth of ordered/patterned ME VANs. [19][20][21]74,[93][94][95][96] Figure 4a shows a schematic of a templating procedure for ordered periodic CFO nanopillars in a BFO matrix. 21 Figure 4b-e shows the detailed morphologies of well-ordered BFO-CFO VANs made by such a templating procedure.…”

Section: Patterned Me Vansmentioning

confidence: 99%

“…[19][20][21]74,[93][94][95][96] Figure 4a shows a schematic of a templating procedure for ordered periodic CFO nanopillars in a BFO matrix. 21 Figure 4b-e shows the detailed morphologies of well-ordered BFO-CFO VANs made by such a templating procedure. 93 Experiments have demonstrated notable ME effects in such patterned ME VANs.…”

Section: Patterned Me Vansmentioning

confidence: 99%

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Magnetoelectricity in vertically aligned nanocomposites: Past, present, and future

et al. 2021

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Vertically aligned magnetoelectric nanocomposites (ME VANs) self-assembled from piezoelectric perovskite and magnetostrictive spinel phases are appealing due to their unique pillar-array-like morphologies and enhanced ME properties. The strain-mediated ME effect leads to various field-dependent characteristics that are tunable, which provides application pathways in microelectronics. The microstructure formation mechanisms of ME VANs have been explored by phase field simulations. Several effective approaches to modify and improve the ME properties of VANs are discussed, including orientations, deposition conditions, and substrate types. Potential applications are also discussed, such as field tunable "adaptive" microelectronics and multistate memory devices.

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Rational Manipulation of Epitaxial Strains Enabled Valence Band Convergence and High Thermoelectric Performances in Mg₃Sb₂ Films

Xie

Liu

Wan

et al. 2023

Adv Funct Materials

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Strain engineering is demonstrated to effectively regulate the functionality of materials, such as thermoelectric, ferroelectric, and photovoltaic properties. As the straightforward approach of strain engineering, epitaxial strain is usually proposed for rationally manipulating the electronic structure and performances of thermoelectric materials, but has rarely been verified experimentally. In this study, tunable and large epitaxial strains are demonstrated, as well as the resulting valence band convergence can be achieved in the Mg3Sb2 epi‐films with the choice of substrates. The large epitaxial strains up to 8% in Mg3Sb2 films represent one of the most striking results in strain engineering. The angle‐resolved photoemission spectroscopy measurements and the theoretical calculations reveal the vital role of epitaxial strain in tuning the crystal field splitting and the band structure of Mg3Sb2. Benefiting from the appropriate manipulation of the crystal field effect via in‐plane compressive strain, the valence band convergence is unambiguously discovered in the strained Mg3Sb2 film grown on InP(111) substrate. As a result, a state‐of‐the‐art thermoelectric power factor of 0.94 mWm−1K−2 is achieved in the strain‐engineered Mg3Sb2 film, well exceeding that of the strain‐relaxed Mg3Sb2. The work paves the way for effectively manipulating epitaxial strain and band convergence for Mg3Sb2 and other thermoelectric films.

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Self-assembled multiferroic epitaxial BiFeO₃–CoFe₂O₄ nanocomposite thin films grown by RF magnetron sputtering

Abstract: Sputter-grown self-assembled epitaxial spinel–perovskite nanocomposites consisting of CoFe2O4 pillars in a BiFeO3 matrix on Nb-doped SrTiO3 or SrTiO3-buffered Si substrates.

Cited by 37 publications

References 37 publications

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices

Magnetoelectricity in vertically aligned nanocomposites: Past, present, and future

Rational Manipulation of Epitaxial Strains Enabled Valence Band Convergence and High Thermoelectric Performances in Mg₃Sb₂ Films

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Self-assembled multiferroic epitaxial BiFeO3–CoFe2O4 nanocomposite thin films grown by RF magnetron sputtering

Abstract: Sputter-grown self-assembled epitaxial spinel–perovskite nanocomposites consisting of CoFe2O4 pillars in a BiFeO3 matrix on Nb-doped SrTiO3 or SrTiO3-buffered Si substrates.

Cited by 37 publications

References 37 publications

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices

Magnetoelectricity in vertically aligned nanocomposites: Past, present, and future

Rational Manipulation of Epitaxial Strains Enabled Valence Band Convergence and High Thermoelectric Performances in Mg3Sb2 Films

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Product

Resources

About

Self-assembled multiferroic epitaxial BiFeO₃–CoFe₂O₄ nanocomposite thin films grown by RF magnetron sputtering

Rational Manipulation of Epitaxial Strains Enabled Valence Band Convergence and High Thermoelectric Performances in Mg₃Sb₂ Films