Self-assembled monolayer assisted bonding of Si and InP

Abstract

A versatile procedure for the low-temperature bonding of silicon and indium-phosphide to silicon is proposed and demonstrated. The procedure relies on the deposition and functionalization of self-assembled, single molecular layers on the surface of one substrate, and the subsequent attachment of the monolayer to the surface of the other substrate with or without its own monolayer coating. The process is applicable to the fabrication of hybrid-silicon, active photonic devices.

Multi-Watt Semiconductor Disk Laser by Low Temperature Wafer Bonding

“…In the second process, the SiO 2 -covered DBR was dipped in NH 4 OH, dried and terminated with hydrophobic SH groups using MPTMS [29]. The InP-based active region was then dipped in 0.5% HF, dried, placed on the SH-terminated DBR [24] and bonded at room temperature by initiating a bonding wave at the center of the wafer. This process will be referred to as MPTMS-bonding.…”

“…In the second method, a monolayer of (3-Mercaptopropyl)trimethoxysilane (MPTMS) is deposited on a SiO 2 -terminated GaAs-based DBR. The resulting surface is then terminated with hydrophobic SH groups that are capable of bonding to a hydrophobic InP surface [24]. Both bonding methods allow for multi-watt performance from InPbased SDLs and offer excellent scalability in output power at the spectral range of 1.3-1.6 µm that can be further extended to 650-800 nm wavelengths by frequency doubling [25], [26].…”

Optically pumped VECSELs: review of technology and progress

“…These approaches also have certain distinctive benefits when compared to the direct wafer bonding methods. Namely, they avoid the requirement for an ultra-high vacuum and the problems related to III-V oxides, but also enable relatively low processing temperatures and therefore low residual stresses in the assembly [159,[163][164][165]. In addition, the use of monolayers and/or hydrophilic dielectric layers can relax the requirements for surface smoothness of the wafers [166,167].…”

“…As the MPTMS evaporates from the container, the hydrophilic MPTMS molecules react with the hydrophilic NH 2 and OH groups on the DBR surface. Consequently, the DBR surface becomes covered with hydrophobic SH groups, which can be used for bonding onto a hydrophobic InP surface [165]. Next, the InP surface is rendered hydrophobic by dipping it into 0.5% HF [191].…”

Low-index nanopatterned barrier for hybrid oxide-free III-V silicon conductive bonding

“…For these optical functions, bonding can make use of oxide, or polymer (e.g., benzocyclobutene BCB). Attempts have been pursued for bonding layer down to a few nm or of molecular nature [4]. GaAs-Si bonding without oxide is also sought actively [5,6] for the useful 1300 nm emission.…”