“…Nanostructures of transition metal silicides are being considered for spintronics applications for the same reasons expressed above for thin film geometries; they offer flexibility since both semiconducting and metallic magnetic ground states can be accessed without the complications of nonequilibrium growth conditions and related tendencies for second-phase nucleation and dopant clustering. A large number of transition metal monosilicide nanowires have been successfully grown including FeSi [160,161], CoSi [162,163], Fe 1Àx Co x Si [164,165], MnSi [166,167], NiSi, PtSi [168], and TiSi [168]. This list of materials is supplemented by a number of other transition metal silicide phases that have been synthesized in nanowire form including Ni 2 Si [169] [172,173]; TaSi 2 [168]; and Ti 5 Si 3 [168].…”