Orientation-Dependent Room-Temperature Ferromagnetism of FeSi Nanowires and Applications in Nonvolatile Memory Devices

Hung, Shih‐Wei; Wang, Terry Tai-Jui; Chu, Li‐Kang; Chen, Lih‐Juann

doi:10.1021/jp201395r

Cited by 27 publications

(29 citation statements)

References 49 publications

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“…The advantages conferred by nanowires have led to numerous advances in bottom-up synthetic routes, such as vapor- and solution-phase growth, − electrodeposition, − and lithographic methods, , which can yield freestanding magnetic nanowires with well-defined diameters, lengths, compositions, and phase purity. Challenges remain, however, because these traditional bottom-up methods often do not allow for precise control over the long-range nanowire morphologies, and they typically lead to surface passivation and the formation of defects. − Alternatively, one can employ top-down approaches to isolate wires from bulk crystals, as demonstrated with Mo 6 S 3 I 6 , − , SnIP, and V 2 Se 9 , , which comprise strong covalently bonded molecular chains connected by van der Waals (vdW) interchain interactions. This approach has shown great promise because starting from ostensibly more highly ordered and surface defect-free bulk crystals yields nanowires whose structural and physical properties enable potential applications in transistors and photovoltaic devices. ,− To our knowledge, however, these softer methodologies have not been extended to magnetic vdW phases and, critically, their utility in accessing highly desirable ultrathin magnetic nanowires remains largely unexplored.…”

Section: Introductionmentioning

confidence: 99%

Ultrathin, High-Aspect Ratio, and Free-Standing Magnetic Nanowires by Exfoliation of Ferromagnetic Quasi-One-Dimensional van der Waals Lattices

Arguilla

Zhang

et al. 2021

J. Am. Chem. Soc.

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Driven by numerous discoveries of novel physical properties and integration into functional devices, interest in onedimensional (1D) magnetic nanostructures has grown tremendously. Traditionally, such structures are accessed with bottom-up techniques, but these require increasing sophistication to allow precise control over crystallinity, branching, aspect ratio, and surface termination, especially when approaching the subnanometer regime in magnetic phases. Here, we show that mechanical exfoliation of bulk quasi-one-dimensional crystals, a method similar to those popularized for two-dimensional van der Waals (vdW) lattices, serves as an efficient top-down method to produce ultrathin freestanding nanowires that are both magnetic and semiconducting. We use CrSbSe 3 as a representative quasi-1D vdW crystal with strong magnetocrystalline anisotropy and show that it can be exfoliated into nanowires with an average cross-section of 10 ± 2.8 nm. The CrSbSe 3 nanowires display reduced Curie−Weiss temperature but higher coercivity and remanence than the bulk phase. The methodology developed here for CrSbSe 3 , a representative for a vast class of 1D vdW lattices, serves as a blueprint for investigating confinement effects for 1D materials and accessing functional nanowires that are difficult to produce via traditional bottom-up methods.

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Section: Introductionmentioning

confidence: 99%

Ultrathin, High-Aspect Ratio, and Free-Standing Magnetic Nanowires by Exfoliation of Ferromagnetic Quasi-One-Dimensional van der Waals Lattices

Arguilla

Zhang

et al. 2021

J. Am. Chem. Soc.

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“…The optimized temperature ranges for growing iron monosilicide and manganese monosilicide nanowires were reported to be 850À1100 °C and 875À950 °C, respectively. 16,20 Taking the experimental setup of our CVD equipment into consideration, 850 °C was found to be the optimal reaction temperature to grow highaspect-ratio and dense nanowires. The highest Mn concentration for Fe 1Àx Mn x Si nanowires was 12% in our work, even if a mixed powder of MnCl 2 :FeCl 2 = 9 in weight ratio was used.…”

Section: Resultsmentioning

confidence: 99%

Free-Standing and Single-Crystalline Fe_1–xMn_xSi Nanowires with Room-Temperature Ferromagnetism and Excellent Magnetic Response

et al. 2012

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High-aspect-ratio Fe(1-x)Mn(x)Si nanowires with room-temperature ferromagnetism were synthesized by a chemical vapor deposition (CVD) method in one step. This is the first report of ternary silicide nanowires using magnetic Mn ions to partially replace metal sites in the host matrix. Here we report the excellent magnetic characteristics of Fe(1-x)Mn(x)Si nanowires, which exhibit strong ferromagnetism at room temperature and high magnetoresistance (MR) variation. As-synthesized Fe(1-x)Mn(x)Si nanowires show a hyperbranched morphology and a spin-disorder behavior. The strong spin interaction in Fe(1-x)Mn(x)Si nanowires, induced by the substitution of Fe sublattices for magnetic Mn ions, was revealed in the hysteresis loops. The magnetization versus magnetic field (M-H) curves of Fe(1-x)Mn(x)Si nanowires are much less sensitive to the temperature variation from 10 to 300 K than those of FeSi nanowires. Remarkably, the excellent MR performance, -41.6% at 25 K with a magnetic field of 9 T, was demonstrated in an individual Fe(0.88)Mn(0.12)Si nanowire.

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“…In addition, the spatial confinement and subtle structural differences of nanostructured materials as compared to bulk materials may result in behavioral differences. This is apparent, for example, in nanowires of CoSi and FeSi, which are diamagnetic or paramagnetic in bulk samples and have been reported to be ferromagnetic at room temperature [163,175]. CoSi nanowires of diameter between 20 and 60 nm and lengths of tens of microns were grown by Seo et al, employing a technique that relies on a metal halide carrier to transport the metal to a heated Si substrate.…”

Section: Monosilicides and Monogermanides Nanostructure Devicesmentioning

confidence: 99%

Si-Based Magnetic Semiconductors

DiTusa

2015

Handbook of Spintronics

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The efforts over the past decade to identify and characterize magnetic semiconducting systems that would be compatible with present-day silicon technologies are reviewed. Investigations that have explored transition metal doping of the group IV semiconductors silicon and germanium are discussed along with intermetallic compounds such as silicides and germanides that may play the role of a magnetic semiconducting source of polarized electrons. Thin films and nanostructures of these materials have been grown by a number of synthesis techniques, and the resulting structural properties, including the important issue of homogeneity of dopants, are critically surveyed. The resulting magnetic and carrier transport properties are also reviewed. List of Abbreviations

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Orientation-Dependent Room-Temperature Ferromagnetism of FeSi Nanowires and Applications in Nonvolatile Memory Devices

Cited by 27 publications

References 49 publications

Ultrathin, High-Aspect Ratio, and Free-Standing Magnetic Nanowires by Exfoliation of Ferromagnetic Quasi-One-Dimensional van der Waals Lattices

Ultrathin, High-Aspect Ratio, and Free-Standing Magnetic Nanowires by Exfoliation of Ferromagnetic Quasi-One-Dimensional van der Waals Lattices

Free-Standing and Single-Crystalline Fe_1–xMn_xSi Nanowires with Room-Temperature Ferromagnetism and Excellent Magnetic Response

Si-Based Magnetic Semiconductors

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Orientation-Dependent Room-Temperature Ferromagnetism of FeSi Nanowires and Applications in Nonvolatile Memory Devices

Cited by 27 publications

References 49 publications

Ultrathin, High-Aspect Ratio, and Free-Standing Magnetic Nanowires by Exfoliation of Ferromagnetic Quasi-One-Dimensional van der Waals Lattices

Ultrathin, High-Aspect Ratio, and Free-Standing Magnetic Nanowires by Exfoliation of Ferromagnetic Quasi-One-Dimensional van der Waals Lattices

Free-Standing and Single-Crystalline Fe1–xMnxSi Nanowires with Room-Temperature Ferromagnetism and Excellent Magnetic Response

Si-Based Magnetic Semiconductors

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Free-Standing and Single-Crystalline Fe_1–xMn_xSi Nanowires with Room-Temperature Ferromagnetism and Excellent Magnetic Response