2011
DOI: 10.1021/jp201395r
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Orientation-Dependent Room-Temperature Ferromagnetism of FeSi Nanowires and Applications in Nonvolatile Memory Devices

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Cited by 27 publications
(29 citation statements)
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“…The advantages conferred by nanowires have led to numerous advances in bottom-up synthetic routes, such as vapor- and solution-phase growth, electrodeposition, and lithographic methods, , which can yield freestanding magnetic nanowires with well-defined diameters, lengths, compositions, and phase purity. Challenges remain, however, because these traditional bottom-up methods often do not allow for precise control over the long-range nanowire morphologies, and they typically lead to surface passivation and the formation of defects. Alternatively, one can employ top-down approaches to isolate wires from bulk crystals, as demonstrated with Mo 6 S 3 I 6 , , SnIP, and V 2 Se 9 , , which comprise strong covalently bonded molecular chains connected by van der Waals (vdW) interchain interactions. This approach has shown great promise because starting from ostensibly more highly ordered and surface defect-free bulk crystals yields nanowires whose structural and physical properties enable potential applications in transistors and photovoltaic devices. ,− To our knowledge, however, these softer methodologies have not been extended to magnetic vdW phases and, critically, their utility in accessing highly desirable ultrathin magnetic nanowires remains largely unexplored.…”
Section: Introductionmentioning
confidence: 99%
“…The advantages conferred by nanowires have led to numerous advances in bottom-up synthetic routes, such as vapor- and solution-phase growth, electrodeposition, and lithographic methods, , which can yield freestanding magnetic nanowires with well-defined diameters, lengths, compositions, and phase purity. Challenges remain, however, because these traditional bottom-up methods often do not allow for precise control over the long-range nanowire morphologies, and they typically lead to surface passivation and the formation of defects. Alternatively, one can employ top-down approaches to isolate wires from bulk crystals, as demonstrated with Mo 6 S 3 I 6 , , SnIP, and V 2 Se 9 , , which comprise strong covalently bonded molecular chains connected by van der Waals (vdW) interchain interactions. This approach has shown great promise because starting from ostensibly more highly ordered and surface defect-free bulk crystals yields nanowires whose structural and physical properties enable potential applications in transistors and photovoltaic devices. ,− To our knowledge, however, these softer methodologies have not been extended to magnetic vdW phases and, critically, their utility in accessing highly desirable ultrathin magnetic nanowires remains largely unexplored.…”
Section: Introductionmentioning
confidence: 99%
“…The optimized temperature ranges for growing iron monosilicide and manganese monosilicide nanowires were reported to be 850À1100 °C and 875À950 °C, respectively. 16,20 Taking the experimental setup of our CVD equipment into consideration, 850 °C was found to be the optimal reaction temperature to grow highaspect-ratio and dense nanowires. The highest Mn concentration for Fe 1Àx Mn x Si nanowires was 12% in our work, even if a mixed powder of MnCl 2 :FeCl 2 = 9 in weight ratio was used.…”
Section: Resultsmentioning
confidence: 99%
“…In addition, the spatial confinement and subtle structural differences of nanostructured materials as compared to bulk materials may result in behavioral differences. This is apparent, for example, in nanowires of CoSi and FeSi, which are diamagnetic or paramagnetic in bulk samples and have been reported to be ferromagnetic at room temperature [163,175]. CoSi nanowires of diameter between 20 and 60 nm and lengths of tens of microns were grown by Seo et al, employing a technique that relies on a metal halide carrier to transport the metal to a heated Si substrate.…”
Section: Monosilicides and Monogermanides Nanostructure Devicesmentioning
confidence: 99%