Self‐assembled InGaAs/GaAs quantum dot photodetector on germanium substrate

Abstract

We are reporting the growth of 30 layer self‐assembled InGaAs/GaAs quantum dot infrared photodetector (QDIP) structures on Ge substrate where a proper interface formation procedure was followed to minimise the defect density at the GaAs/Ge interface. The interface formation technique includes deposition of a migration enhanced epitaxy (MEE) grown GaAs layer followed by deposition of a thin GaAs layer grown with multiple annealing steps in between. The structural and optical properties of the heterostructure are evaluated by Transmission Electron Microscopy (TEM) and Photoluminescence (PL). The I‐V curve for the grown device structure has been demonstrated. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer

“…In the last two decades, III-V compound semiconductor materials grown on elemental semiconductor substrates have attracted much attention due to their potential applications in high-efficiency solar cells, [1−3] photodetectors, [4,5] quantum-dot (QD) lasers, [6,7] and metal-oxide-semiconductor field-effect transistors (MOSFETs). [8,9] Due to their extremely high electron mobility, III-V semiconductors such as GaAs, InGaAs and InAs are believed to be channel materials for future complementary metal-oxidesemiconductor (CMOS) technology.…”