Self-assembled CdS quantum-dot structures grown on ZnSe and ZnSSe

Kitamura, Keiichi; Umeya, H.; Jia, A.W.; Shimotomai, M.; Kato, Yoshiaki; Kobayashi, Masakazu; Yoshikawa, Akihiko; Takahashi, Kazuhiro

doi:10.1016/s0022-0248(00)00177-9

Cited by 7 publications

(2 citation statements)

References 9 publications

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“…In III-V compound semiconductor systems, laser diode devices with InAs/GaAs QD structures were successfully demonstrated [4]. Successful examples were also found in the II-VI compound semiconductor-based QD structures, such as laser diodes and bright light-emitting diodes [5,6]. CdSe QDs grown on the ZnSe buffer layer constitute one of the most well-studied systems among the II-VI compound semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Growth mode transfer of self-assembled CdSe quantum dots grown by molecular beam epitaxy

Lai

Lin

et al. 2006

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Growth mode transfer of self-assembled CdSe quantum dots grown by molecular beam epitaxy

Lai

Lin

et al. 2006

Journal of Crystal Growth

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“…Stacking of QD planes with properly chosen dot sizes were demonstrated to emit white light. Furthermore, light-emitting diodes made from the II-VI compound semiconductor QDs were reported [12]. Although a large amount of effort placed on the fabrication of opto-electronic devices based on QDs, the focus of interest remains on the novel physical properties exhibited in the material systems of QDs.…”

Section: Introductionmentioning

confidence: 99%

Analysis of size distributions of type II ZnTe/ZnSe quantum dots

Lee

Yang

Chang

et al. 2004

Physica Status Solidi (b)

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The photoluminescence (PL) spectrum of the ZnTe/ZnSe quantum dot (QD) structure which has a type II band alignment was investigated. A broader structure peaking at 2.180 eV together with the features of the ZnSe buffer layer located at 2.820 eV in the PL spectrum at 10 K were observed. The broadness of the PL attributes to the spatial inhomogeneity of the QD sizes. The PL spectrum was a normal distribution with a variance of 0.002 eV 2 . However, the dot size distribution was a deformed Gaussian. Using only one set of data of dot size distribution measured by the Atomic Force Microscopy (AFM), the statistical estimates with standard errors were evaluated using the bootstrap methodology. The probability distribution was inferred by calculating the means, percentiles and correlation coefficients of the base diameter and the height of the QDs. We concluded that the dot distributions were indeed a deformed Gaussian and the correlation coefficient of the diameter and the height of the QDs was 0.49 ± 0.01. The uniformity of the dot size distribution was poor. To infer the dot size distribution from the PL spectrum, we numerically solved the Schrödinger equation by elaborating on the orthogonal periodic functions (OPF) approximation for the type II lens shaped QDs. The convergence of the probability density was discussed in a great detail. We found that the band edge discontinuities inside the dot acts as a barrier with ∆E c = 315 meV for the conduction band and as a well with ∆E v = 735 meV for the valence band. In the AFM measurement, the offset in dot height is 14 Å and the aspect ratio is 0.04. We employed the Schrödinger equation to correlated the PL spectrum (intensity versus optical energy) to the AFM data (number of QDs versus dot size) and the agreement was excellent.

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HgTe, CdTe, (Cd,Mn)Te, (Cd,Mg)Te, ZnTe, HgSe, CdSe, ZnCdSe, (Cd,Mn)Se, ZnSe, HgS, CdS, ZnS, CdO, ZnO quantum dots -self-organized, epitaxially grown nanostructures

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Landolt-Börnstein - Group III Condensed Matter

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Self-assembled CdS quantum-dot structures grown on ZnSe and ZnSSe

Cited by 7 publications

References 9 publications

Growth mode transfer of self-assembled CdSe quantum dots grown by molecular beam epitaxy

Growth mode transfer of self-assembled CdSe quantum dots grown by molecular beam epitaxy

Analysis of size distributions of type II ZnTe/ZnSe quantum dots

HgTe, CdTe, (Cd,Mn)Te, (Cd,Mg)Te, ZnTe, HgSe, CdSe, ZnCdSe, (Cd,Mn)Se, ZnSe, HgS, CdS, ZnS, CdO, ZnO quantum dots -self-organized, epitaxially grown nanostructures

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