Superlattices and Microstructures volume 46, issue 1-2, P277-285 2009 DOI: 10.1016/j.spmi.2008.10.041 View full text
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Andrea Kramer, Martin Albrecht, Torsten Boeck, Thilo Remmele, Peter Schramm, Roberto Fornari

Abstract: a b s t r a c tSelf-assembled and ordered silicon and germanium nanowires grown by physical vapor deposition (PVD) via vapor-liquid-solid (VLS) mechanism are presented.The morphology of the nanowires has been investigated by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Differences in the orientation of the homoepitaxially grown nanowires between silicon and germanium were observed. Most silicon nanowires grew in [111] direction on the (111) Si substrate whereas germanium nano…

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