Self-assembled and ordered growth of silicon and germanium nanowires

Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy

“…While a high surface temperature favors the growth of <111>-oriented NWs, contradictory results have been obtained regarding the effect of the evaporation rate [7,8]. However, consistent with these previous studies, we note that the comparison of the length between the <111>-oriented Ge NW and those oriented along the <110> directions shows a strong difference.…”

In-situ observation of 〈110〉 oriented Ge nanowire growth and associated collector droplet behavior

“…In-situ observation of h110i oriented Ge nanowire growth and associated collector droplet behavior Miroslav Kolíbal, 1,2,a) Tomáš Vystavěl, 3 Libor Novák, 3 Jindřich Mach, 1,2 and Tomáš Š ikola 1 Using in-situ microscopy, we show that germanium nanowires can be grown by a vapor-liquid-solid process in h110i directions both on Ge(100) and Ge(111) substrates if very low supersaturation in the collector droplet is ensured. This can be provided if thermal evaporation is utilized.…”

“…The droplet has to be fed with the growth material, which is supplied in the form of gas molecules (chemical vapor deposition, CVD) or an atomic beam (physical vapor deposition, PVD). [3][4][5] In case of CVD, both silicon and germanium nanowires growing in the technologically important h110i direction were reported only for small nanowire diameters (<20 nm). [6][7][8][9] The NWs of larger diameters usually grow in the h111i direction.…”

“…Such an initial growth morphology has also been observed previously. 3,13 The initial formation of the growth interface is of particular importance. As revealed by in-situ observations on the Ge(100) substrate presented in Fig.…”

Recent advances in the growth of germanium nanowires: synthesis, growth dynamics and morphology control

“…Ge nanowires have been observed to grow principally along the <110> direction from GaAs substrates whereas Si and Ge substrates commonly produce nanowires with a <111> growth direction. However, Ge(111) substrates have also been reported to yielding Ge nanowires with a predominately <110> orientation 202 .…”