Self-Aligning Ruthenium Interconnects

Schlag, Leslie; Grau, Richard; Hossain, Mobassar; Nahrstedt, Helene; Isaac, Nishchay A.; Reiprich, Johannes; Pezoldt, Joerg; Jacobs, Heiko O.

doi:10.1109/iitc47697.2020.9515654

Cited by 3 publications

(6 citation statements)

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“…[ 282 ] Self‐aligning Ru interconnects technology with a gas‐phase ED process performed with an adjustable AG has been developed (Figure 15c ). [ 283 ]…”

Section: Next‐generation Interconnect Materialsmentioning

confidence: 99%

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Materials Quest for Advanced Interconnect Metallization in Integrated Circuits

et al. 2023

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Integrated circuits (ICs) are challenged to deliver historically anticipated performance improvements while increasing the cost and complexity of the technology with each generation. Front‐end‐of‐line (FEOL) processes have provided various solutions to this predicament, whereas the back‐end‐of‐line (BEOL) processes have taken a step back. With continuous IC scaling, the speed of the entire chip has reached a point where its performance is determined by the performance of the interconnect that bridges billions of transistors and other devices. Consequently, the demand for advanced interconnect metallization rises again, and various aspects must be considered. This review explores the quest for new materials for successfully routing nanoscale interconnects. The challenges in the interconnect structures as physical dimensions shrink are first explored. Then, various problem‐solving options are considered based on the properties of materials. New materials are also introduced for barriers, such as 2D materials, self‐assembled molecular layers, high‐entropy alloys, and conductors, such as Co and Ru, intermetallic compounds, and MAX phases. The comprehensive discussion of each material includes state‐of‐the‐art studies ranging from the characteristics of materials by theoretical calculation to process applications to the current interconnect structures. This review intends to provide a materials‐based implementation strategy to bridge the gap between academia and industry.

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“…[ 282 ] Self‐aligning Ru interconnects technology with a gas‐phase ED process performed with an adjustable AG has been developed (Figure 15c ). [ 283 ]…”

Section: Next‐generation Interconnect Materialsmentioning

confidence: 99%

“…Introducing the new process can directly adjust the size of the enclosed AG and the diameter of the interconnect. Reproduced with permission [283]. Copyright 2020, Institute of Electrical and Electronics Engineers.…”

mentioning

confidence: 99%

Materials Quest for Advanced Interconnect Metallization in Integrated Circuits

et al. 2023

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“…In this work the principle of gas phase electrodeposition is adapted, which demonstrated metallic horizontal interconnects in the past and presents itself as very material efficient. [13][14][15] While the use of direct print methods for packaging metal tracks on flexible substrates has increased in recent years, the number of applications in the sub-micrometer range is rare. Another important material constant for interconnects is the relative permittivity.…”

Section: Introductionmentioning

confidence: 99%

“…In this process, metallic nanoparticles are generated in a spark discharge, transported to the substrate by a gas flow, and can subsequently be deposited into layers [17] or localized structures. [13][14][15][18][19][20] While the benefits of material conservation, size reduction through lensing, and surrounding airgaps are beneficial, the process of gas phase electrodeposition has so far been limited by less electrical conductance. The formation of desired 3D shapes that grew out of the charge dissipating openings under the influence of the dynamic evolving lensing funnel like electric field, consist of small metallic nanoparticles.…”

Section: Introductionmentioning

confidence: 99%

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Self‐Aligning Metallic Vertical Interconnect Access Formation through Microlensing Gas Phase Electrodeposition controlling Airgap and Morphology

Schlag

Isaac

Hossain

et al. 2022

Adv Elect Materials

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This publication reports self‐aligning metallic via microlensing gas phase electrodeposition formation. Key operational parameters to fabricate vertical ruthenium and rhodium interconnects (via) with a diameter of 100 nm are discussed. Moreover, airgaps are implemented during the deposition process, which utilizes spark discharge to generate a flux of charged nanoparticles. An inert gas flow transports the nanoparticles through a reactor chamber close to the target substrate. The substrate uses a pre‐patterned resist with openings to a silicon/silicon dioxide/metal stack to direct the deposition of the nanoparticles to form localized self‐aligning vertical interconnects. Five process parameters were identified, which impact the morphology and conductance of the resulting interconnects: spark discharge power, gas flow rate, microlens via dimensions, substrate surface potential, and in situ flash lamp power. This parameter set enables a controlled adjustment of the via interconnect morphology and its minimum feature size. Gas flow rate in combination with spark discharge power contribute significantly to the morphology of the interconnect. Spark power and microlens via dimensions have the largest influence on the surface potential of the insulating resist cover, which enables a localized microlensing gas phase electrodeposition of a via with a controlled ratio between conducting diameter and airgap.

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