Self-Aligned Metal Source/Drain In_xGa_1-xAs n-Metal–Oxide–Semiconductor Field-Effect Transistors Using Ni–InGaAs Alloy

Abstract

We report that a Ni–InGaAs alloy can be used as a source/drain (S/D) metal for InGaAs metal–oxide–semiconductor field-effect transistors (MOSFETs), allowing us to employ the salicide-like self-align S/D formation. We also introduce Schottky barrier height (SBH) engineering process by increasing the indium content of InxGa1-xAs channels, which successfully reduces SBH down to zero. We propose a fabrication process for self-aligned metal S/D MOSFETs using Ni–InGaAs and demonstrate successful operation of the metal S/D InxGa1-xAs MOSFETs. The In0.7Ga0.3As MOSFETs exhibit an S/D resistance (RSD) that is 1/5 lower than that in P–N junction devices and a high peak mobility of 2000 cm2 V-1 s-1.

In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with self-aligned metal source/drain using Co-InGaAs alloys

“…5,6,14 This finding allows us to form the metal S/D in a self-aligned manner like the salicide process in Si MOSFETs.…”

“…We extracted the SBH value of 0.12 eV from the temperature dependence of the I-V characteristics. 5,6 Also, the Co-InGaAs/p-InGaAs diode shows the good rectifying behavior with an on/off ratio of over 10 4 and an ideal factor of 1.1.…”

“…1 Recently, a variety of studies on III-V MOSFETs have been actively reported by many groups. [2][3][4][5][6][7][8][9][10][11][12] High performance III-V MOSFETs even with three-dimensional channel structures have been demonstrated. 8,9,12 However, in order to fully utilize the potential of III-V MOSFETs in an ultra-scaled technology node, the formation of source/drain (S/D) regions with a low resistance and a self-aligned way is mandatory.…”

“…5,6 However, one of the disadvantages of the NiInGaAs S/D is a limited process window for back end of line (BEOL) process in terms of the thermal budget, which is attributed to the lack of thermal stability of Ni-InGaAs. 15 Therefore, a material for the metal S/D with high thermal stability is strongly needed to realize the high performance InGaAs MOSFETs with sufficient thermal budget in the BEOL process.…”

Nanometer-scale InGaAs field-effect transistors for THz and CMOS technologies

“…A contact to gate spacing of 30 nm on 30 nm gate length devices has been achieved. Alternative self-aligned designs are being investigated based on silicide-like processes using Ni, Co or Pd [42,43]. A self-aligned gate-last approach allows the MOS gate stack to be formed late in the process and hence helps preserve a high quality oxide-semiconductor interface.…”