Self-Activation and Self-Coactivation in Zinc Sulfide Phosphors

Prener, J. S.; Williams, Ferd

doi:10.1063/1.1742892

Cited by 94 publications

(29 citation statements)

References 6 publications

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“…Prener and Williams 23 have proposed that the equivalent of the monovalent cation for self-activated emission is a Zn vacancy plus one nearest-neighbor halogen. For recent evidence, see the work of Koda and Shionoya 24 and references therein.…”

Section: Discussionmentioning

confidence: 99%

Nearest-Neighbor Splitting of the Luminescence Levels ofZnSxSe1−x

Fonger

1965

Phys. Rev.

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Section: Discussionmentioning

confidence: 99%

Nearest-Neighbor Splitting of the Luminescence Levels ofZnSxSe1−x

Fonger

1965

Phys. Rev.

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“…3,[24][25][26] This luminescence is known to result from the recombination of an electron trapped at Al Zn ϩ with a hole at an acceptor of a nearest-neighbor associate of a zinc vacancy and Al Zn ϩ . 3,4,[24][25][26][27] Currently, the probable mechanism of the luminescence observed in the nanoparticles is considered to be the self-activated luminescence for the following three reasons: First, this luminescence has the same character of the donor-acceptor pair transition as the self-activated luminescence. Second, the peak position of the blue luminescence of the nanoparticles is higher in energy by about 0.1 eV than that of the self-activated luminescence observed in the bulk ZnS powder, which satisfies the requirement of the spatial confinement.…”

Section: Resultsmentioning

confidence: 99%

Luminescence properties of ZnS phosphor nanocrystals prepared by the laser-induced gas-evaporation method

Tanaka¹,

Sawai

Sengoku

et al. 2000

Journal of Applied Physics

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Nanocrystalline particles of ZnS:͑Ag, Al͒ semiconductor phosphor, whose sizes are mostly 3-5 nm in diameter, are prepared by the gas-evaporation method with cw CO 2 laser heating. The Raman scattering spectrum as well as the transmission electron microscope observation demonstrates that the crystallization of the nanoparticles was caused successfully through the gas-phase condensation. Under irradiation of ultraviolet light, the nanoparticles exhibit blue luminescence, as in the case of the starting material of ZnS:͑Ag, Al͒ bulk powder. The peak of the luminescence spectrum of the nanoparticles shifts to lower energy with increasing delay time and also with decreasing excitation intensity, showing that the luminescence originates from the donor-acceptor pair recombination. However, it is concluded that the luminescence of the nanoparticles is not ascribed to the blue Ag luminescence mechanism responsible for the luminescence of the bulk powder, by taking into account the spatial confinement of an electron trapped at the donor and a hole at the acceptor. It is argued that the luminescence mechanism of the nanoparticles is the so called self-activated luminescence, which involves zinc vacancies.

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“…This was Paper 539 presented at the Denver, Colorado, Meeting of the Society, Oct. [11][12][13][14][15][16] 1981.…”

Section: Acknowledgmentmentioning

confidence: 99%

Vapor Phase Epitaxial Growth of MgO · Al2 O 3

Ihara

Arimoto

Jifuku

et al. 1982

J. Electrochem. Soc.

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An Si on MgO 9 A120~ on Si double heterostructure material for integrated circuits has been developed. The MgO-A1203 epitaxial layer on Si was grown by using an open-tube A1-HC1-MgC1s-CO2-H2 vapor phase transport technique. The electron Hall mobility and the defect density of the Si active layer on epitaxially grown MgO 9 A120~ were~n = 1400 cm2/Vsec and 1 x 10Vcm 2, respectively, when the Si thickness was 8/~m and the doping concentration was n = 2 • 1014/cm 3. The growth conditions of MgO 9 A1203 epitaxial layers and the characteristics of the Si active layers are presented.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 155.33.16.124 Downloaded on 2014-11-05 to IP

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Self-Activation and Self-Coactivation in Zinc Sulfide Phosphors

Cited by 94 publications

References 6 publications

Nearest-Neighbor Splitting of the Luminescence Levels ofZnSxSe1−x

Nearest-Neighbor Splitting of the Luminescence Levels ofZnSxSe1−x

Luminescence properties of ZnS phosphor nanocrystals prepared by the laser-induced gas-evaporation method

Vapor Phase Epitaxial Growth of MgO · Al2 O 3

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