Nearest-Neighbor Splitting of the Luminescence Levels of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">Zn</mml:mi><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">S</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Se</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>

Fonger, W. H.

doi:10.1103/physrev.137.a1038

Cited by 20 publications

(4 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The activation energy is seen to decrease with increasing Mn concentration, similar to the results reported by Su et al [25]. This behavior has been interpreted in terms of the four-center model suggested by Fonger [26] and observed in many ternary alloys [27,28]. …”

Section: Resultssupporting

confidence: 86%

Photoluminescence characteristics of Cd1-xMn x Te single crystals grown by the vertical Bridgman method

Hwang

Park

2012

Nanoscale Res Lett

View full text Add to dashboard Cite

In this paper, we report a systematic investigation of band-edge photoluminescence for Cd1-xMnxTe crystals grown by the vertical Bridgman method. The near-band-edge emissions of neutral acceptor-bound excitons (labeled as L1) were systematically investigated as a function of temperature and of alloy composition. The parameters that describe the temperature variation of the energy were evaluated by the semiempirical Varshni relation. From the temperature dependence of the full width at half maximum of the L1 emission line, the broadening factors Γ(T) were determined from the fit to the data. The activation energies of thermal quenching were obtained for the L1 peak from the temperature dependence of the bound exciton peaks and were found to decrease with increasing Mn concentration.

show abstract

Section: Resultssupporting

confidence: 86%

Photoluminescence characteristics of Cd1-xMn x Te single crystals grown by the vertical Bridgman method

Hwang

Park

2012

Nanoscale Res Lett

View full text Add to dashboard Cite

show abstract

“…3, it is found that when the value of Mn concentration is ®xed, the activation energy decreases with increasing Te concentration. We interpret this behavior by the four-center model, which was ®rst suggested by Fonger [12]. We consider the lattice of the ternary alloy Zn 12x Mn x Se 12y Te y , and the defect center locates at the Zn vacancy as shown in Fig.…”

Section: Resultsmentioning

confidence: 91%

Dielectric studies of Zn1−xMnxSe1−yTey epilayers

Cho

Chen

Shen

et al. 2001

Solid State Communications

View full text Add to dashboard Cite

“…To interpret this result we propose the four-center model first suggested by Fonger. 20 Considering an alloy A 1Ϫx B x C with a zinc-blende structure, we assume the defect center locates at the C vacancy. If the defect wave function is sufficiently localized, the defect center is confined to the C vacancy and its nearest neighbors.…”

Section: Resultsmentioning

confidence: 99%

Dielectric studies of Cd1−x−yZnxMnyTe crystals

Lin

Chen

Shen

et al. 2001

Journal of Applied Physics

View full text Add to dashboard Cite

We report on the dielectric properties of Cd 1ϪxϪy Zn x Mn y Te alloys studied by capacitance and dissipation factor measurements at temperature 5 KϽTϽ475 K and frequency 20 HzϽ f Ͻ1 MHz. A Debye-like relaxation of dielectric behavior has been observed, which is found to be a thermally activated process. The activation energies obtained from the capacitance and dissipation factor measurements are in excellent agreement. By means of our measurements, it is believed that the dielectric character of the carrier hopping among structural defects is responsible for the observed Debye relaxation. The relationship between the activation energy and Zn concentration has been established. The results are described by the four-center model, in which the number of Zn atoms appearing in the nearest-neighbor sites of a defect can have four possible configurations.

show abstract

Nearest-Neighbor Splitting of the Luminescence Levels ofZnSxSe1−x

Cited by 20 publications

References 20 publications

Photoluminescence characteristics of Cd1-xMn x Te single crystals grown by the vertical Bridgman method

Photoluminescence characteristics of Cd1-xMn x Te single crystals grown by the vertical Bridgman method

Dielectric studies of Zn1−xMnxSe1−yTey epilayers

Dielectric studies of Cd1−x−yZnxMnyTe crystals

Contact Info

Product

Resources

About