Photoluminescence characteristics of Cd1-xMn x Te single crystals grown by the vertical Bridgman method

Abstract

In this paper, we report a systematic investigation of band-edge photoluminescence for Cd1-xMnxTe crystals grown by the vertical Bridgman method. The near-band-edge emissions of neutral acceptor-bound excitons (labeled as L1) were systematically investigated as a function of temperature and of alloy composition. The parameters that describe the temperature variation of the energy were evaluated by the semiempirical Varshni relation. From the temperature dependence of the full width at half maximum of the L1 emission line, the broadening factors Γ(T) were determined from the fit to the data. The activation energies of thermal quenching were obtained for the L1 peak from the temperature dependence of the bound exciton peaks and were found to decrease with increasing Mn concentration.

Transverse magnetic routing of light emission in hybrid plasmonic-semiconductor nanostructures: Towards operation at room temperature

“…At larger photon energy around 1.688 eV at T = 4 K there is a dip which coincides with the PL maximum from the bare QW as discussed in Section IV A. The position of the dip shifts to lower energies with increasing temperature, which is due to the reduction of the energy band gap at larger temperatures [41]. This is also in agreement with the red shift of the PL maximum in Fig.…”