Selectivity of growth on patterned GaAs (311)A substrates

Journal of Applied Physics

Gong

et al. 2005

Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Zhou, D., Nötzel, R., Gong, Q., Offermans, P., Koenraad, P. M., Veldhoven, van, P. J., .. General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. ͑In,Ga͒As sidewall quantum wires ͑QWires͒ are realized by chemical beam epitaxy along ͓01-1͔ mesa stripes on shallow-patterned InP ͑311͒A substrates. The QWires exhibit strong lateral carrier confinement due to larger thickness and In composition compared to the adjacent quantum wells, as determined by cross-sectional scanning-tunneling microscopy and microphotoluminescence ͑micro-PL͒ spectroscopy. The PL of the ͑In,Ga͒As QWires with InP and quaternary ͑Ga,In͒͑As,P͒ barriers reveals narrow linewidth, high efficiency, and large lateral carrier confinement energies of 60-70 meV. The QWires are stacked in growth direction with identical PL peak emission energy. The PL emission energy is not only controlled by the ͑In,Ga͒As layer thickness but also by the patterned mesa height. Stacked ͑In,Ga͒As QWires with quaternary barriers exhibit room temperature PL emission at 1.55 m in the technologically important wavelength region for telecommunication applications.

Section: Introductionmentioning

confidence: 99%

(In,Ga)As sidewall quantum wires on shallow-patterned InP (311)A

Zhou

Journal of Applied Physics

Gong

et al. 2005

“…͓S0003-6951͑00͒01148-7͔ Molecular-beam epitaxy ͑MBE͒ growth on patterned GaAs ͑311͒A substrates has been demonstrated as a promising way to fabricate high-quality low-dimensional quantum structures. 1,2 The formation of GaAs/͑Al, Ga͒As quantum wires ͑QWR͒ and quantum dots ͑QD͒ with excellent structural 3,4 and electronic properties 5,6 near the bottom of the sidewall towards ͓23 3 ͔ relies on the preferential migration of Ga atoms from the mesa top and bottom towards the sidewall, leaving behind a smooth, nonfaceted, convex profile, which is tilted by about 1°to the ͑311͒A plane. To gain deeper understanding of the unique growth behavior on patterned GaAs ͑311͒A substrates, in this letter we present a detailed study of the evolution of the growth front by crosssectional atomic force microscopy ͑XAFM͒, as well as of the surface morphology by top view AFM for a wide range of GaAs layer thickness.…”

mentioning

confidence: 99%

Stable nonplanar surface formed on patterned GaAs (311)A substrate by molecular-beam epitaxy

Gong

Applied Physics Letters

Schönherr

et al. 2000

The evolution of the growth front during molecular-beam epitaxy on patterned GaAs (311)A substrates is investigated by cross-sectional atomic force microscopy. The growth rate on the sidewalls is enhanced due to the preferential atom migration from the mesa top and bottom to the sidewalls. The growth front evolution is terminated by the formation of a stable, corrugated surface which is composed of (311)A terraces and steps toward the [23̄3̄] and [2̄33] directions. Modulation of island density in strained-layer growth is demonstrated by growing 4 ML InAs on this nonplanar surface.

“…[7][8][9][10] QWR and QD formations rely on the preferential adatom migration from the mesa top and bottom towards the fast-growing sidewall in the sector towards the next ͑100͒ plane. 11 The direction of adatom migration is, thus, opposite to that on patterned ͑100͒ substrates for formation of V-groove or ridgetype QWRs which are bound by slow-growing side facets. High-quality, weakly strained InGaAs QWRs embedded in InGaAsP on shallow-patterned InP ͑311͒A substrates have been demonstrated with strong emission up to room temperature in the technologically important 1.55 m wavelength range for telecom applications.…”

Section: Introductionmentioning

confidence: 99%

In As ∕ In Ga As P sidewall quantum dots on shallow-patterned InP (311)A

Zhou

Journal of Applied Physics

Otten

et al. 2006

Highly strained InAs quantum dots ͑QDs͒ embedded in InGaAsP are formed at the fast-growing ͓01− 1͔ mesa sidewall on shallow-patterned InP ͑311͒A substrates by chemical beam epitaxy. Temperature dependent photoluminescence ͑PL͒ reveals efficient carrier transfer from the adjacent dashlike QDs in the planar areas to the larger sidewall QDs resulting in well-distinguishable emission around 80 K. The large high-energy shift of the PL from the sidewall QDs as a function of excitation power density is ascribed to the screening of the internal piezoelectric field. The linear polarization of the PL from the sidewall QDs is reversed compared to that of the quantum dashes in the planar areas due to the more symmetric shape and possible nonuniform strain in the sidewall QDs.