Selectively etched diffraction gratings in GaAs

Comerford, Liam D.; Zory, P.S.

doi:10.1063/1.1655442

Cited by 44 publications

(8 citation statements)

References 13 publications

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“…To reliably meet this requirement when fabricating gratings with submicron periodicity, thin photoresist films are needed. In previous work, 1000 A photoresist films were used in the fabrication of a 2400 A period mask [Come74].…”

Section: Photoresist Considerationsmentioning

confidence: 99%

Liquid Contact Luminescence from Semiconductor Laser Materials

Largent¹

1997

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Semiconductor diode lasers are now widely used in many applications such as optical memories (e.g. compact-disk players) and fiber-optic communications. Recently, we discovered that a liquid contact made to standard diode laser material can be used to obtain light emission resulting from electron-hole recombination in the "active" layer buried in the multilayer epitaxial structure. Since the active layer is responsible for light amplification in diode lasers made from such material, this liquid contact luminescence phenomenon has potential as a new type of diode laser material evaluation technique. In addition, since the efficiency of the light emission process can be high, the liquid contact luminescence phenomenon has the potential for use as a new type of flat panel display (FPD). vii Historically, the liquid contact luminescence phenomenon was discovered during the course of experiments involving pulsed anodic oxidation (anodization) of semiconductor laser materials in liquid electrolytes. When observed in the time domain, we found that the light was emitted, with long delays, after the termination of the voltage pulse. The complex relationship between oxide thickness, light emission intensity, and turn-on delay is described. When the drive current direction is reversed from that used in pulsed anodization, the material is not anodized and light is emitted continuously from the active layer inside the semiconductor material as long as the current is on. Because this configuration produces light emission similar to that produced using photoluminescence (PL), we refer to it as liquid contact luminescence or LCL. LCL is a quick, inexpensive, and non-destructive way to obtain information about a variety of material parameters including peak emission wavelength, spectral linewidth, and relative internal quantum efficiency. The use of aqueous electrolytes in the initial LCL experiments resulted in bubble generation. Based on a systematic study of non-aqueous solutions, it was discovered that it was possible to perform LCL without bubble generation and to reduce circuit resistance. As a consequence, we have now demonstrated the feasibility of using the, liquid contact luminescence phenomenon as the basis for a new type of FPD technology. viii CHAPTER 1

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Section: Photoresist Considerationsmentioning

confidence: 99%

Liquid Contact Luminescence from Semiconductor Laser Materials

Largent¹

1997

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“…Recently, microstructures (textures) produced on a crystal surface by the chemical and electrochemical etching methods were demonstrated to greatly improve the performance of some optical and electro-optical devices; these improvements were attributed to the large surface-to-volume ratio after etching [5][6][7][8][9][10][11][12]. However, a three-electrode electrochemical setup has to be used during the electrochemical texturization, and in most cases of chemical texturization, a periodic mask is necessary [9][10].…”

Section: Introductionmentioning

confidence: 98%

“…However, a three-electrode electrochemical setup has to be used during the electrochemical texturization, and in most cases of chemical texturization, a periodic mask is necessary [9][10]. Spontaneous chemical texturization, i.e., texturization without the use of an electrochemical setup and masks, therefore requires only simple techniques.…”

Section: Introductionmentioning

confidence: 99%

Characterization and chemical surface texturization of bulk ZnTe crystals grown by temperature gradient solution growth

Yang

Wang

Liu

2015

Int J Miner Metall Mater

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Using tellurium as a solvent, we grew ZnTe ingots of 30 mm in diameter and 70 mm in length by a temperature gradient solution growth method. Hall tests conducted at 300 K indicated that the as-grown ZnTe exhibits p-type conductivity, with a carrier concentration of approximately 10 14 cm −3 , a mobility of approximately 300 cm 2 ·V −1 ·s −1 , and a resistivity of approximately 10 2 Ω·cm. A simple and effective method was proposed for chemical surface texturization of ZnTe using an HF:H 2 O 2 :H 2 O etchant. Textures with the sizes of approximately 1 μm were produced on {100}, {110}, and {111} Zn surfaces after etching. The etchant is also very promising in crystal characterization because of its strong anisotropic character and Te-phase selectivity.

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“…Из литературных данных известно, что узкие канавки на поверхности GaAs(001) могут быть получены методом химического [1] или плазмохимического травления [2]. Для последующего эпитаксиального наращивания химическое травление предпочтительнее, поскольку создает минимальный нарушенный слой.…”

Section: Introductionunclassified

Особенности газофазной эпитаксии GaAs на непланарных подложках

Дроздов¹,

Kraev²,

Охапкин³

et al. 2020

Физика И Техника Полупроводников

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Исследованы особенности формы поверхности эпитаксиальных слоев GaAs, выращенных на канавках шириной в несколько микрометров с вертикальными стенками и аспектным соотношением, близким к единице. Канавки формировались на поверхности пластины GaAs в установке плазмохимического травления, заращивались методом металлоорганической газофазной эпитаксии при пониженном давлении в реакторе. Ключевые слова: плазмохимическое травление GaAs, узкие канавки, эпитаксия GaAs в канавках.

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Selectively etched diffraction gratings in GaAs

Abstract: Selective etching techniques are described which have been utilized to fabricate V-groove diffraction gratings with spatial frequencies greater than 4000 lines/mm in {100} surfaces of GaAs.

Cited by 44 publications

References 13 publications

Liquid Contact Luminescence from Semiconductor Laser Materials

Liquid Contact Luminescence from Semiconductor Laser Materials

Characterization and chemical surface texturization of bulk ZnTe crystals grown by temperature gradient solution growth

Особенности газофазной эпитаксии GaAs на непланарных подложках

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