Selective wet etching and hydrolysis of polycrystalline AlN films grown by metal organic chemical vapor deposition

Constant, A.; Coppens, P.; Baele, J.; Ziad, H.; Novák, Tomáš; Kostelník, Petr; Pestel, F. De

doi:10.1016/j.mssp.2021.106157

Cited by 4 publications

(5 citation statements)

References 18 publications

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“…As ball‐milling time extended to 24 h, an amorphous layer with thickness about 1.53 nm was formed on the surface of SAD particles (Figure S3B). After ball milling for 48 h, the amorphous layer still exists at the edge of the particle as shown in Figure 2B, which could be explained by Equations ()–() 24–26 …”

Section: Resultsmentioning

confidence: 99%

“…After ball milling for 48 h, the amorphous layer still exists at the edge of the particle as shown in Figure 2B, which could be explained by Equations ( 1)-(3). [24][25][26]…”

Section: Effect Of Ball-milling Time On Hydrolysis Processmentioning

confidence: 99%

“…As the committed step of SAD pretreatment process, the hydrolysis of AlN is accompanied by a series of reactions, and AlOOH is first generated on the surface of AlN, and then converted into Al(OH) 3 , accompanied by the production of ammonia gas, as shown in Equations ( 1)-(3). [24][25][26] Similarly, aluminum hydroxide and gas could be produced during the hydrolysis of metallic Al, as shown in Equation (4). 27 In this study, we propose to utilize this hydrolysis process to attain sol and gas, 28 which simultaneously realizes the process of both curing and foaming.…”

Section: Introductionmentioning

confidence: 99%

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Hydrolysis‐induced simultaneous foaming and coagulation casting of secondary aluminum dross aqueous suspension

Zhang

Shen

et al. 2023

J Am Ceram Soc.

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The reactive AlN, heavy metal ions, and salts in secondary aluminum dross make them harmful to the environment and difficult to handle, and therefore categorized as hazardous solid waste. A novel, simple, and versatile technique has been proposed here to prepare hierarchically porous ceramics using secondary aluminum dross as the sole raw material, namely, the hydrolysis-induced simultaneous foaming and coagulation casting method. As the main component, Al and AlN could be hydrolyzed to generate aluminum hydroxide sol, which can form three-dimensional network and lead to the outstanding compressive strength of green body (7.03 MPa). Gas release during hydrolysis, high-temperature oxidation of AlN, and metallic Al based on Kirkendall effect could account for the final multilevel pores. The utilization of harmful components in secondary aluminum dross, supplys an alternative colloidal forming way for porous green body with complex shape when combined with other ceramic powders or inorganic solid waste. Low sintering shrinkage of 1.38%-3.60% for hierarchically porous ceramics offers this highly effective and low-cost method to be easily promoted for industrial production.

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Section: Resultsmentioning

confidence: 99%

“…After ball milling for 48 h, the amorphous layer still exists at the edge of the particle as shown in Figure 2B, which could be explained by Equations ( 1)-(3). [24][25][26]…”

Section: Effect Of Ball-milling Time On Hydrolysis Processmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Hydrolysis‐induced simultaneous foaming and coagulation casting of secondary aluminum dross aqueous suspension

Zhang

Shen

et al. 2023

J Am Ceram Soc.

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“…It may be because after the plasmas the samples were dipped into EKC265™, which has an etchant effect, removing the oxides created by the plasmas. Indeed, EKC265™ contains hydroxylamine (NH 2 -OH), which was reported to act as an etchant on AlN oxides [31].…”

Section: Hot Phosphoric Acid Treatment : Influence Of Immersion Durationmentioning

confidence: 99%

H3PO4-based wet chemical etching for recovery of dry-etched GaN surfaces

Benrabah

Legallais

Besson

et al. 2022

Applied Surface Science

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“…Meanwhile, wet-chemical etching (WCE) has emerged as a potential method in nitride semiconductor industry, mostly for patterning of the layer, but at the same time it remains to be a key surface processing route for effectively controlling the lateral overgrowth [ 18 – 21 ]. Besides its advantage as a simple process, WCE can etch defect sites selectively in GaN epilayers under the use of specific etchants such as phosphoric acid (H 3 PO 4 ), molten potassium hydroxide (KOH), and mixed solution of H 3 PO 4 /H 2 SO 4 [ 22 – 24 ].…”

Section: Introductionmentioning

confidence: 99%

Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes

Park¹,

Baek

Kim

et al. 2022

PLoS ONE

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Substrate-induced biaxial compressive stress and threading dislocations (TDs) have been recognized to severely impair the performance, stability, and reliability of InGaN/GaN light-emitting diodes (LEDs) for quite some time. In this study, a defect-selective-etched (DSE) porous GaN layer is fabricated employing electro-chemical etching and applied as a buffer layer for the development of InGaN/GaN LEDs with high quantum efficiency. Based on the analysis of photoluminescence and micro-Raman spectra, it has been revealed that the overgrown GaN epilayer on the DSE porous GaN has a relatively low TDs and relaxation of compressive stress in comparison to the conventional GaN epilayer. The remarkable improvement in the internal quantum efficiency of the InGaN/GaN LEDs is directly attributable to the strong radiative recombination in InGaN/GaN multi-quantum-wells caused by stress relaxation and TDs annihilation. Our findings indicate that the use of DSE porous GaN as a buffer layer may be a viable approach for producing crystalline GaN epilayers and high-performance LEDs.

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Selective wet etching and hydrolysis of polycrystalline AlN films grown by metal organic chemical vapor deposition

Cited by 4 publications

References 18 publications

Hydrolysis‐induced simultaneous foaming and coagulation casting of secondary aluminum dross aqueous suspension

Hydrolysis‐induced simultaneous foaming and coagulation casting of secondary aluminum dross aqueous suspension

H3PO4-based wet chemical etching for recovery of dry-etched GaN surfaces

Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes

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