Selective Removal of High-k Dielectrics

Shamiryan, Denis; Paraschiv, Vasile

doi:10.1149/1.3567596

Cited by 5 publications

(4 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These studies have some relvance here and will be discussed in brief. King et al 11 and Shamiryan et al 12 reviewed numerous areas where fluorine interactions with Al and Al 2 O 3 are relevant because the high dielectric constant of Al 2 O 3 makes it an appealing alternative to SiO 2 substrates for downsizing the electronic base. Thus, the wet and dry (plasma) chemistry required to selectively remove alumina (i.e., etching) has led to the identification of key chemical interactions that also have importance to energetic material applications.…”

Section: ■ Introductionmentioning

confidence: 99%

Fluorination of an Alumina Surface: Modeling Aluminum–Fluorine Reaction Mechanisms

Padhye¹,

Aquino

Tunega

et al. 2017

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Density functional theory (DFT) calculations were performed to examine exothermic surface chemistry between alumina and four fluorinated, fragmented molecules representing species from decomposing fluoropolymers: F, HF, CHF, and CF. The analysis has strong implications for the reactivity of aluminum (Al) particles passivated by an alumina shell. It was hypothesized that the alumina surface structure could be transformed due to hydrogen bonding effects from the environment that promote surface reactions with fluorinated species. In this study, the alumina surface was analyzed using model clusters as isolated systems embedded in a polar environment (i.e., acetone). The conductor-like screening model (COSMO) was used to mimic environmental effects on the alumina surface. Four defect models for specific active -OH sites were investigated including two terminal hydroxyl groups and two hydroxyl bridge groups. Reactions involving terminal bonds produce more energy than bridge bonds. Also, surface exothermic reactions between terminal -OH bonds and fluorinated species produce energy in decreasing order with the following reactant species: CF > HF > CHF. Additionally, experiments were performed on aluminum powders using thermal equilibrium analysis techniques that complement the calculations. Consistently, the experimental results show a linear relationship between surface exothermic reactions and the main fluorination reaction for Al powders. These results connect molecular level reaction kinetics to macroscopic measurements of surface energy and show that optimizing energy available in surface reactions linearly correlates to maximizing energy in the main reaction.

show abstract

Section: ■ Introductionmentioning

confidence: 99%

Fluorination of an Alumina Surface: Modeling Aluminum–Fluorine Reaction Mechanisms

Padhye¹,

Aquino

Tunega

et al. 2017

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…increasing PSMSQ films porosity). However, the experimental k values of porous PSMSQ films were higher than theoretical values presumably due to adsorbed water, whose k value is close to 80 [16]. Moisture absorption may be attributed to the residual silanol groups in the low-k films.…”

Section: Resultsmentioning

confidence: 67%

Synthesis, Pore Morphology, and Dielectric Property of Mesoporous Low-k Material PSMSQ Using a Reactive High-Temperature Porogen, TEPSS

Chiu¹,

Hsu²,

Che³

et al. 2011

ECS Trans.

View full text Add to dashboard Cite

A high-temperature reactive porogen, triethoxy(polystyrene)silane (TEPSS) (M w =3,500 g/mole), suitable for late-porogen removal integration scheme has been synthesized in p-xylene via atom transfer radical polymerization. TEPSS was then grafted onto poly(methyl-silsesquioxane) (MSQ) matrix (k=2.9) to circumvent possible phase separation between matrix and porogen in the hybrid approach and porogen aggregation. Our results shows porous low-k MSQ films possess uniform pore size, 24 nm for porosity up to 40%, primarily due to low PDI and reactive porogen, and the dielectric constant is decreased to 2.37 at 40% porosity. In addition, less porogen aggregation was observed at porogen loading ~40 v%.

show abstract

“…Moreover, given that physical and chemical etching simultaneously occur during plasma etching 40 , another possible reason for the high plasma-resistance of YM ceramics is the higher mechanical reliability compared 2. The results of mechanical and thermal properties of specimens indicate that the inherently inferior physical properties of Y 2 O 3 ceramics can be overcame by adopting YM composite with the highest facture toughness and thermal conductivity.…”

Section: Resultsmentioning

confidence: 99%

Remarkable plasma-resistance performance by nanocrystalline Y2O3·MgO composite ceramics for semiconductor industry applications

Park

Kim

et al. 2021

Sci Rep

View full text Add to dashboard Cite

Motivated by recent finding of crystallographic-orientation-dependent etching behavior of sintered ceramics, the plasma resistance of nanocrystalline Y2O3-MgO composite ceramics (YM) was evaluated for the first time. We report a remarkably high plasma etching resistance of nanostructure YM surpassing the plasma resistance of commercially used transparent Y2O3 and MgAl2O4 ceramics. The pore-free YM ceramic with grain sizes of several hundred nm was fabricated by hot press sintering, enabling theoretical maximum densification at low temperature. The insoluble two components effectively suppressed the grain growth by mutual pinning. The engineering implication of the developed YM nanocomposite imparts enhanced mechanical reliability, better cost effectiveness with excellent plasma resistance property over their counterparts in plasma using semiconductor applications.

show abstract

Selective Removal of High-k Dielectrics

Cited by 5 publications

References 21 publications

Fluorination of an Alumina Surface: Modeling Aluminum–Fluorine Reaction Mechanisms

Fluorination of an Alumina Surface: Modeling Aluminum–Fluorine Reaction Mechanisms

Synthesis, Pore Morphology, and Dielectric Property of Mesoporous Low-k Material PSMSQ Using a Reactive High-Temperature Porogen, TEPSS

Remarkable plasma-resistance performance by nanocrystalline Y2O3·MgO composite ceramics for semiconductor industry applications

Contact Info

Product

Resources

About