Selective MOVPE growth of GaAs on Si and its applications to LEDs

Ackaert, Ann; Demeester, Piet; Buydens, L.; Coudenys, G.; Daele, Peter Van; Renaud, M

doi:10.1016/0022-0248(91)90563-k

Cited by 7 publications

(5 citation statements)

References 5 publications

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“…The basic part of GaAs layer is then grown under the conditions standard for this material. Insertions in GaAs layer volume as ultra-thin epitaxial layers of Si, InGaAs strained material and also strained superlattices [8,12,26] actively initiate annihilation of threading dislocations (TD).…”

Section: Direct Gaas-on-si Epitaxymentioning

confidence: 99%

III-V Compounds-on-Si: Heterostructure Fabrication, Application and Prospects

Bolkhovityanov¹,

Pchelyakov²

2009

TONANOJ

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While silicon and gallium arsenide are dominant materials in modern micro-and nanoelectronics, devices fabricated from them still use Si and GaAs substrates only separately. Integrating these materials on the large and cheep Si substrate has been the subject of enormous research efforts for the past three decades. This review attempts to systematize and generalize the current understanding of the fundamental physical mechanisms governing the epitaxial growth of GaAs and related III-V compounds on Si substrates. Different kinds of bonding as a very promising non-epitaxial method for III-V thin film integration on Si substrate are reviewed. Basic techniques available for improving the quality of such heterostructures are described, and recent advances in fabricating of device-quality III-V-on-Si heterostructures and corresponding devices are also presented.

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Section: Direct Gaas-on-si Epitaxymentioning

confidence: 99%

III-V Compounds-on-Si: Heterostructure Fabrication, Application and Prospects

Bolkhovityanov¹,

Pchelyakov²

2009

TONANOJ

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“…Although this approach was first proposed eight years ago, 17 subsequent experiments were only conducted in the GaAs/Si (001) material system, [19][20][21] and no quantitative model for this approach has ever been presented. Although this approach was first proposed eight years ago, 17 subsequent experiments were only conducted in the GaAs/Si (001) material system, [19][20][21] and no quantitative model for this approach has ever been presented.…”

Section: Patterned Heteroepitaxial Processingmentioning

confidence: 99%

“…Ackaert et al 20 grew patterned GaAs/Si (001) with h = 3 µm and lateral dimensions L < 100 µm. Light emitting diodes fabricated in the patterned material exhibited superior brightness compared to similar devices fabricated in unpatterned GaAs/Si (001) due to a reduction in the density of threading dislocations.…”

Section: Patterned Heteroepitaxial Processingmentioning

confidence: 99%

Removal of threading dislocations from patterned heteroepitaxial semiconductors by glide to sidewalls

Zhang

Zhao

et al. 1998

Journal of Elec Materi

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Section: Introductionmentioning

confidence: 99%

“…The easiest way to achieve this goal is selective epitaxial growth of thin GaAs layers on Ge substrates. Even though selective growth of GaAs on GaAs substrates [8][9][10][11][12][13][14][15][16][17] and on Si substrates [18][19][20][21] has already been studied extensively, very little is known about selective growth of GaAs on Ge. In general, growth of GaAs on Ge presents a somewhat increased complexity compared to the GaAs substrate case, because of the polar nature of GaAs, compared to the nonpolar nature of the Ge substrates.…”

Section: Introductionmentioning

confidence: 99%

Selective epitaxial growth of GaAs on Ge by MOCVD

Brammertz

Mols

Degroote

et al. 2006

Journal of Crystal Growth

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We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO 2 mask layer. The selectively grown structures have lateral sizes ranging from 1 mm width up to large areas of 1 Â 1 mm 2 . The growth with the standard growth procedure for GaAs growth on Ge substrates reveals a limited amount of GaAs nucleation on the mask area and strong loading effects caused by diffusion of group III precursors over the mask area and in the gas phase. Reduction of the growth pressure inhibits GaAs nucleation on the mask area and reduces the loading effects strongly, but favors the creation of anti-phase domains (APDs) in the GaAs. An optimized growth procedure was developed, consisting of a 13 nm thin nucleation layer grown at high pressure, followed by lowpressure growth of GaAs. This optimized growth procedure inhibits the nucleation of GaAs on the mask area and is a good compromise between reduction of loading effects and inhibition of APD growth in the GaAs. X-ray diffraction and photoluminescence measurements demonstrate the good microscopic characteristics of the selectively grown layers. r

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Selective MOVPE growth of GaAs on Si and its applications to LEDs

Cited by 7 publications

References 5 publications

III-V Compounds-on-Si: Heterostructure Fabrication, Application and Prospects

III-V Compounds-on-Si: Heterostructure Fabrication, Application and Prospects

Removal of threading dislocations from patterned heteroepitaxial semiconductors by glide to sidewalls

Selective epitaxial growth of GaAs on Ge by MOCVD

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