Selective Growth of Semi‐insulating InP around Masked Nonplanar Structures Using Low‐Pressure Pulsed Metallorganic Epitaxy

Abstract

Selective growth of Fe‐doped InP around masked, nonplanar structures has been studied using low‐pressure pulsed metallorganic epitaxy (PME). The structures, which are etched by a combination of reactive ion etching and wet chemical etching, have a mask overhang length of less than 0.5 μm and a mesa height of 2–3 μm. We show that it is possible to obtain a planar growth surface on a “nonre‐entrant” etched profile using low‐pressure PME, at a growth temperature of 630°C. The growth behavior has been influenced by the stripe orientations, the etched profiles, and the growth temperature. A plane overshooting phenomenon is observed and discussed in terms of a surface migration mechanism. This new growth technique has been used in device fabrication. © 1999 The Electrochemical Society. All rights reserved.

1.3 μm Strain-Compensated InGaAsP Planar Buried Heterostructure Laser Diodes with a TO-Can Package for Optical Fiber Communications

“…By using a high growth temperature ͑680°C͒ along with a low working pressure ͑100 Torr͒ during the regrowth process, we can achieve surface planarization and avoid the polycrystalline deposited on the dielectric mask. 14 Finally, a 1.7 µm p-InP cladding layer with a carrier concentration of 1 ϫ 10 18 cm −3 and a 0.4 µm p + -InGaAs contact layer were grown in the third growth step. The wafer was back-lapped and polished to a thickness of about 100 µm.…”