Selective growth of InGaAs on nanoscale InP islands

Ahopelto, Jouni; Lipsanen, Harri; Sopanen, Markku; Koljonen, T.; Niemi, Heidi

doi:10.1063/1.112903

Cited by 39 publications

(11 citation statements)

References 8 publications

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“…The quality of the applied commercial-etched silicon tips33 was checked before and after the measurements with a reference sample consisting of small roundshaped quantum dots (InP/GaAs). 34 The mean spring constant of these tips was 36 N m~1, the length was 125 lm and the tip ends were D10 nm in diameter.…”

Section: Atomic Force Microscopymentioning

confidence: 99%

An XPS and AFM study of polypyrrole coating on mild steel

Idla

Talo

Niemi

et al. 1997

Surf. Interface Anal.

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We have characterized electrically conductive polymer, polypyrrole (Ppy), films on mild steel with atomic force microscopy (AFM) and x‐ray photoelectron spectroscopy (XPS). The Ppy films were polymerized electrochemically from sodium p‐toluene sulphonate (ToS) water–ethanol solution. A very good corrosion protective effect of those films on mild steel has been observed previously. After drying in air, thin Ppy films (∽200 nm) were highly adhesive, whereas thicker films (∽7.5 μm) could easily be peeled off from the metal. All films had a nodular surface structure. Thin films were very smooth and their roughness increased with their thickness. The AFM study of the interface between the metal and the polymer showed areas of different morphology, which suggests that adhesive and cohesive failure of the polymer film occurs. A strong variation of the chemical composition at the interfacial layer was observed. A sulphur‐rich layer was formed at the interface, indicating that the counter‐anions (ToS) were accumulated on the surface of the metal. High‐binding energy iron and imine‐type nitrogen were detected in a thin Ppy film. Moreover, thin films were substantially overoxidized. The number of anions incorporated into the Ppy matrix varied as a function of film thickness: the ‘doping level’ was about 30% for thicker films and only 12% for thin ones. Nitrate counter‐anion‐containing Ppy films were also studied in some cases for comparison. © 1997 John Wiley & Sons, Ltd.

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Section: Atomic Force Microscopymentioning

confidence: 99%

An XPS and AFM study of polypyrrole coating on mild steel

Idla

Talo

Niemi

et al. 1997

Surf. Interface Anal.

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“…Smaller islands have a relatively homogeneous size distribution ͑Ϯ10%͒ with a base diameter of 100 nm and a height of 20 nm. 10 The larger islands are 50-80 nm high with a base width of 200-300 nm. With similar growth parameters coherently strained and partially relaxed island types were observed when depositing InP on Ga 0.51 In 0.49 P/GaAs by MOVPE.…”

Section: Strain-induced Quantum Dots By Self-organized Stressorsmentioning

confidence: 99%

Strain-induced quantum dots by self-organized stressors

Sopanen

Lipsanen

Ahopelto

1995

Applied Physics Letters

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“…In the well-studied InGaAs/GaAs QD system, modifying the dot structures by combining layers with different composition has proven to be effective for controlling the physical properties of self-assembled QDs [46,47] ) and appeared to have better uniformity. However, increasing the GaAsN thickness to 10 nm or more resulted in significant increase in surface roughness, as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation

et al. 2006

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Self-assembled GaInNAs quantum dots (QDs) were grown on GaAs (001) substrate using solidsource molecular-beam epitaxy (SSMBE) equipped with a radio-frequency nitrogen plasma source. The GaInNAs QD growth characteristics were extensively investigated using atomic-force microscopy (AFM), photoluminescence (PL), and transmission electron microscopy (TEM) measurements. Self-assembled GaInNAs/GaAsN single layer QD lasers grown using SSMBE have been fabricated and characterized. The laser worked under continuous wave (CW) operation at room temperature (RT) with emission wavelength of 1175.86 nm. Temperature-dependent measurements have been carried out on the GaInNAs QD lasers. The lowest obtained threshold current density in this work is~1.05 kA/cm 2 from a GaInNAs QD laser (50 · 1,700 lm 2 ) at 10°C. High-temperature operation up to 65°C was demonstrated from an unbonded GaInNAs QD laser (50 · 1,060 lm 2 ), with high characteristic temperature of 79.4 K in the temperature range of 10-60°C.

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Selective growth of InGaAs on nanoscale InP islands

Cited by 39 publications

References 8 publications

An XPS and AFM study of polypyrrole coating on mild steel

An XPS and AFM study of polypyrrole coating on mild steel

Strain-induced quantum dots by self-organized stressors

Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation

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