Selective growth and other applications of hydrogen-assisted molecular beam epitaxy

Kawabe, Mitsuo

doi:10.1016/0022-0248(95)80237-7

Cited by 14 publications

(5 citation statements)

References 12 publications

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“…1) Most prominent is the low temperature surface cleaning by reactive removal of oxygen and carbon 2) which has been also confirmed on InP 3) and Si 4) substrates. When extended to the continuous removal of impurities during growth, high-quality epitaxial layers have been obtained by atomic hydrogen assisted MBE at low temperature.…”

Section: Introductionmentioning

confidence: 76%

Atomic Hydrogen Induced Step Bunching on High-Index GaAs Substrates for Fabrication of Novel Quantum Wire and Quantum Dot Arrays by Molecular Beam Epitaxy

Nötzel

Ploog

2000

Jpn. J. Appl. Phys.

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We present our recent experiments on the effect of atomic hydrogen on the growth on planar and patterned high-index GaAs substrates by molecular beam epitaxy and its application to novel quantum wire and quantum dot arrays. The promotion of step bunching on GaAs (331)A substrates by atomic hydrogen to well-ordered multiatomic step arrays is utilized for the fabrication of modulation-doped conductive quantum wires with strong anisotropy of the electron conductivity. Atomic hydrogen induced step bunching on GaAs (311)A substrates combined with lithographic patterning of the substrate prior to growth produces uniform arrays of quantum dots.KEYWORDS: III-V semiconductors molecular beam epitaxy step bunching atomic hydrogen quantum wires quantum dots * Present address:

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Section: Introductionmentioning

confidence: 76%

Atomic Hydrogen Induced Step Bunching on High-Index GaAs Substrates for Fabrication of Novel Quantum Wire and Quantum Dot Arrays by Molecular Beam Epitaxy

Nötzel

Ploog

2000

Jpn. J. Appl. Phys.

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“…There are several alternative ways of removing the native oxide from GaAs including group-III assisted annealing [41,42] or atomic hydrogen (a-H) [43]. Here, we investigated the use of a-H, which is known to produce atomically smooth GaAs surfaces in thin film epitaxy owing to significantly reduced temperatures required for the Ga 2 O 3 to Ga 2 O transformation and at the same time it also facilitates the reduction of the carbon contamination [25,44] (see Sec. S2 in SM [35]).…”

Section: A Oxide Removal and Gaas(sb) Buffer Growthmentioning

confidence: 99%

Doubling the mobility of InAs/InGaAs selective area grown nanowires

Beznasyuk

Martí‐Sánchez

Kang

et al. 2022

Phys. Rev. Materials

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Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics, and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully realised, since interfacial roughness, misfit dislocations at the nanowire/substrate interface and nonuniform composition due to material intermixing all scatter electrons. Here, we explore SAG of highly lattice-mismatched InAs nanowires on insulating GaAs(001) substrates and address these key challenges. Atomically smooth nanowire/substrate interfaces are achieved with the use of atomic hydrogen (a-H) as an alternative to conventional thermal annealing for the native oxide removal. The problem of high lattice mismatch is addressed through an In x Ga 1−x As buffer layer introduced between the InAs transport channel and the GaAs substrate. The Ga-In material intermixing observed in both the buffer layer and the channel is inhibited via careful tuning of the growth temperature. Performing scanning transmission electron microscopy and x-ray diffraction analysis along with low-temperature transport measurements we show that optimized In-rich buffer layers promote high-quality InAs transport channels with the field-effect electron mobility over 10 000 cm 2 V −1 s −1 . This is twice as high as for nonoptimized samples and among the highest reported for InAs selective area grown nanostructures.

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“…[1][2][3] They include etching techniques, 4,5) focused ion beam implantation, 6,7) self-assembled growth techniques 8) and area selective epitaxy. [9][10][11][12][13][14] Etching and ion implantation techniques introduce damages in the substrate surfaces. Self-assembled growth techniques provide low-dimensional structures in wide wafer areas.…”

Section: Introductionmentioning

confidence: 99%

“…This problem has been solved by impinging atomic hydrogen on the growth surface. 13) A modified migration-enhanced epitaxy (MEE) deposition sequence has also solved this problem with 2 s annealing after Ga deposition. 14) In order to utilize the crystalline facets formed in area selective epitaxy, as the lateral boundaries of microstructures, it is necessary to ascertain the determining mechanisms of facet indices.…”

Section: Introductionmentioning

confidence: 99%

Determination of the Facet Index in Area Selective Epitaxy of GaAs

Kuriyama

Ito

Suzuki

et al. 2000

Jpn. J. Appl. Phys.

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Area selective epitaxy of GaAs on GaAs substrates masked by SiO 2 has been investigated using migration-enhanced epitaxy (MEE) with 2 s annealing after Ga deposition. By this method, successful area selective epitaxy of GaAs has been achieved at substrate temperatures around 590 • C. We have carried out area selective epitaxy of GaAs on GaAs substrates of various surface indices. Side facets are found to be composed of vertical {110} facets when epitaxial growth is carried out on GaAs (n11)A substrates, and composed of inclined {n20} facets when GaAs (n11)B substrates are used. It is determined that the growth rates of A-and B-surfaces are the most important factors in the facet index determination.

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Selective growth and other applications of hydrogen-assisted molecular beam epitaxy

Cited by 14 publications

References 12 publications

Atomic Hydrogen Induced Step Bunching on High-Index GaAs Substrates for Fabrication of Novel Quantum Wire and Quantum Dot Arrays by Molecular Beam Epitaxy

Atomic Hydrogen Induced Step Bunching on High-Index GaAs Substrates for Fabrication of Novel Quantum Wire and Quantum Dot Arrays by Molecular Beam Epitaxy

Doubling the mobility of InAs/InGaAs selective area grown nanowires

Determination of the Facet Index in Area Selective Epitaxy of GaAs

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